Depth Profiling of Cu(In,Ga)Se2 by Grazing Incidence X-ray Diffraction

2003 ◽  
Vol 763 ◽  
Author(s):  
I.M. Kötschau ◽  
G. Bilger ◽  
H.W. Schock
Keyword(s):  
Thin Film ◽  
Depth Profile ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Strong Impact ◽  
X Ray Diffraction ◽  
Typical Application ◽  
X Ray ◽  
Depth Profiles

AbstractGrazing incidence X-ray diffraction (GIXRD) in conjunction with a layer absorption modeling algorithm is a powerful tool for studying the structural properties of polycrystaline thin films. A typical application is the refinement of compositional depth profiles. Of genera interest are the depth profile of the Ga/(In+Ga)-ratio over the entire thickness of the thin film, as well as the depth profile of th Cu/(In+Ga)-ratio near the surface. In this respect the three stage process is a particular interesting deposition technique. A remarkable recrystalization of the entire thin film at the end of the second stage has a strong impact on Ga-gradients as well as on the Cu-depletion close to the surface. In this contribution we use the GIXRD technique to refine composititional depth profiles obtained by secondary ion mass spectrometry (SIMS). We demonstrate that structura changes near the surface due to the recrystalization can be monitored. In addition we are able measure the depth of a Cu-depleted surface layer with high accuracy.

Thermal Behaviour of Implanted Nitrogen and Accumulated Hydrogen in Titanium

1997 ◽  
Vol 504 ◽  
Author(s):  
M. Soltani-Farshi ◽  
H. Baumann ◽  
D. Rück ◽  
G. Walter ◽  
K. Bethge
Keyword(s):  
Ion Implantation ◽  
Depth Distribution ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Depth Profiles ◽  
Hydrogen Accumulation ◽  
Nitrogen Ion

ABSTRACTThe influence of nitrogen ion implantation on the hydrogen accumulation in titanium was investigated as function of sample temperature and ion fluence. 150 keV nitrogen (15N) ions were implanted at different sample temperatures up to 700°C with fluences ranging from 1 × 1017 to 1 × 1018 ions/cm2. The amount of accumulated hydrogen and its depth distribution was measured quantitatively with the 15N depth profiling method. The implanted 15N depth profiles were measured by the reverse reaction 15N(p, αγ)12C at 429 keV. The binary phases of the implanted nitrogen with titanium are detected by grazing incidence x-ray diffraction. The results are compared with those obtained for samples implanted at RT and subsequently thermally treated.

Surface and Ultra-Thin Film Characterization by Grazing-Incidence Asymmetric Bragg Diffraction

1989 ◽  
Vol 33 ◽  
pp. 91-100 ◽  
Author(s):  
T. C. Huang
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Grazing Incidence ◽  
Bragg Diffraction ◽  
Dead Layer ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
Radiation Sources

AbstractAn effective technique using grazing-incidence X-rays and asymmetric-Bragg diffraction (GIABD) for the characterization of crystalline phases on surfaces and structural depth-profiles in thin films is described. The application of the GIABD using both X-ray and synchrotron radiation sources for the analysis of an iron-oxide magnetic thin film previously reported to have an unexpected magnetically-dead layer is discussed. The X-ray diffraction analysis using the GIABD and the conventional θ-2θ scanning techniques detected an anti-ferromagnetic hexagonal α-Fe2O3 on the surface and a ferromagnetic tetragonal γ-Fe2O3 in the bulk of the film, respectively. The synchrotron diffraction analysis using incident angles below and above the critical angle of total reflection quantitatively determined the structural depth-profiles of α-Fe2O3 and γ-Fe2O3 in the film.

Proposed Methods for Depth Profiling of Residual Stresses using Grazing Incidence X-Ray Diffraction (GIXD)

1992 ◽  
Vol 36 ◽  
pp. 237-245 ◽  
Author(s):  
Paul Predecki ◽  
X. Zhu ◽  
B. Ballard
Keyword(s):  
Integral Method ◽  
Direct Method ◽  
Incident Angle ◽  
Strain Tensor ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
A Direct Method

AbstractTwo proposed methods are described for obtaining the depth profiles (τ-profiles) of strains and stresses as a function of the 1/e penetration depth τ, using GIXD in the asymmetric geometry, without the need for layer removal. In the first, the ψ-method: ψ is varied, for a given reflection, while holding τ constant, by varying the wavelength λ and adjusting the incident angle α so as to maintain τ constant. This allows dϕ,ψ vs Sin2ψ plots to be obtained at constant τ. In the second, the ϕ-integral method: interplanar spacings dϕ,ψ are measured for ϕ values from 0 to 2π, at constant ψ and τ by holding α fixed. Two ψ values, i.e. two wavelengths, are needed to obtain the whole strain tensor, but if the sample is quasi-isotropic and the stress state is biaxial, only one wavelength is needed. A direct method is also described for obtaining the profiles as a function of depth z (z-profiles) from the corresponding τ-profiles using inverse Laplace transforms. Application of the method to the residual strain vs τ data of Doerner and Brennan for an Al film on Si is presented.

Depth Profiling Biaxial Stresses in Sputter Deposited Molybdenum Films; Use of the Cos2φ Method

1995 ◽  
Vol 39 ◽  
pp. 363-370
Author(s):  
B. L. Ballard ◽  
P. K. Predecki ◽  
T. R. Watkins ◽  
K. J. Kozaczek ◽  
D. N. Braski ◽  
...  
Keyword(s):  
Penetration Depth ◽  
Stress Gradient ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Columnar Zone ◽  
X Ray ◽  
Depth Profiles ◽  
Oxygen Gradient ◽  
Sputter Deposited

Depth profiles of intrinsic in-plane, biaxial stresses were obtained as a function of τ, the 1/e penetration depth, in a 1.0 um thick planar d. c. magentron sputter deposited molybdenum film using asymmetric grazing incidence x-ray diffraction (GIXD). τ was varied between 20 and 276 Å. The stresses σ11 and σ22 were characterized in the directions parallel and perpendicular to the long axis of the cathode respectively using a cos2φ method. The results show that starting from τ=17Å, σ11 and σ22 are compressive and become rapidly more compressive with a minimum at τ ∼ 20 - 40 Å thereafter increasing gradually toward tensile values. The reasons for the shape of the stress gradient are not well understood but may be related to the relaxation of the stresses at the tops of the columnar Zone T-type microstructure and to the oxygen gradient in the film.

Energy Dispersive Grazing Incidence X-ray Diffraction Study on Organic Thin Films EpitaxiaHy Grown on Crystalline Substrate

1995 ◽  
Vol 39 ◽  
pp. 659-664 ◽  
Author(s):  
Kenji Ishida ◽  
Akinori Kita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Shoichi Kal ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Studies ◽  
Organic Thin Films ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural Evaluation ◽  
Crystalline Substrate ◽  
Scattering Volume

Thin film technology is rapidly evolving today, and the characterization of the thin film and its surface have become very important issue not only from scientific but also technological viewpoints. Although x-ray diffraction measurements have been used as suitable evaluation methods in crystallography studies, its application to the structural evaluation of the thin films, especially organic one having the low electron densities, is not easy due to the small amounts of scattering volume and the high obstructive scattering noise from the substrate. However, the x-ray diffraction measurements under grazing incidence will aid not only in overcoming the such problems but also in analyzing in-plane structure of the thin films. Therefore, so-called grazing incidence x-ray diffraction (GIXD) has been recognized as one of the most powerful tools for the surface and thin film studies.

Progress in study of mono- and multilayers and thin film structure by X-ray reflectivity, grazing incidence X-ray diffraction and spectroscopy

2014 ◽  
Vol 83 (12) ◽  
Author(s):  
M A Shcherbina ◽  
S N Chvalun ◽  
Sergey Anatol'evich Ponomarenko ◽  
Mikhail Valentinovich Kovalchuk
Keyword(s):  
Thin Film ◽  
Grazing Incidence ◽  
Film Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Film Structure

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

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