Growth and Characterization of Self-Aligned Erbium Silicide on N-Type, (100) Oriented Silicon

1998 ◽  
Vol 514 ◽  
Author(s):  
Suhit R. Das ◽  
Les LeBrun ◽  
G. Irwin Sproule
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contacts ◽  
Hexagonal Phase ◽  
Infrared Detector ◽  
Bulk Composition ◽  
Ex Situ ◽  
Potential Applications ◽  
20 Nm

ABSTRACTIn view of its low barrier height to n-type Si, ErSi2 has potential applications as an infrared detector, as low-resistance ohmic contacts and as source/drain regions in Schottky barrier MOSFETs. Although there is a substantial body of work on ErSi2 grown on Si(111), there are relatively few published papers on the growth and properties of ErSi2 on Si(100). In order to develop a CMOS-compatible process, we have studied the growth of ErSi2 using a multi-source, UHV magnetron system to sputter-deposit 20 nm Ti/(10–50) nm Er bilayers on chemically cleaned n-Si(100) substrates followed by ex-situ rapid thermal annealing in N2. Highly oriented ErSi2 in the hexagonal phase was formed at an annealing temperature of 400°C with ErSi2 (100) Si(100). The Ti overlayer and the unreacted Er were selectively etched in HF and HNO3, respectively, leaving behind an ErSi2 layer with a smooth surface morphology, a uniform bulk composition and a planar ErSi2/Si interface. Results of electrical sheet resistance and Schottky barrier height measurements on these layers will be reported.

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

2020 ◽  
Vol 1004 ◽  
pp. 725-730
Author(s):  
Fabrizio Roccaforte ◽  
Monia Spera ◽  
Salvatore Di Franco ◽  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Current Transport ◽  
Large Area ◽  
Si Substrates ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
Thermionic Field Emission

Gallium nitride (GaN) and its AlGaN/GaN heterostructures grown on large area Si substrates are promising systems to fabricate power devices inside the existing Si CMOS lines. For this purpose, however, Au-free metallizations are required to avoid cross contaminations. In this paper, the mechanisms of current transport in Au-free metallization on AlGaN/GaN heterostructures are studied, with a focus on non-recessed Ti/Al/Ti Ohmic contacts. In particular, an Ohmic behavior of Ti/Al/Ti stacks was observed after an annealing at moderate temperature (600°C). The values of the specific contact resistance ρc decreased from 1.6×104 Ω.cm2 to 7×105 Ω.cm2 with increasing the annealing time from 60 to 180s. The temperature dependence of ρc indicated that the current flow is ruled by a thermionic field emission (TFE) mechanism, with barrier height values of 0.58 eV and 0.52 eV, respectively. Finally, preliminary results on the forward and reverse bias characterization of Au-free tungsten carbide (WC) Schottky contacts are presented. This contact exhibited a barrier height value of 0.82 eV.

Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height

1997 ◽  
Vol 6 (2-4) ◽  
pp. 398-402 ◽  
Author(s):  
P.K. Baumann ◽  
S.P. Bozeman ◽  
B.L. Ward ◽  
R.J. Nemanich
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electron Affinity ◽  
Schottky Barrier Height

Synthesis and Characterization of FePt Nanoparticle/Single Walled Carbon Nanotube Composites

2009 ◽  
Vol 620-622 ◽  
pp. 505-508 ◽  
Author(s):  
Yan Wang ◽  
Lian Gao ◽  
Jing Sun ◽  
Yang Qiao Liu
Keyword(s):  
Carbon Nanotube ◽  
Synthesis And Characterization ◽  
Fept Nanoparticles ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Nanotube Composites ◽  
Potential Applications ◽  
Carbon Nanotube Composites ◽  
20 Nm

We report the synthesis and characterization of FePt nanoparticles (NPs)/single walled carbon nanotube (SWNTs) nanocomposites, which might have important potential applications to orient CNTs and the development of new catalysts. The crystallite size of FePt NPs is about 2.5-4 nm and the Fe atom content ranges from 50% to 65%. HiPCO SWNTs have been decorated with FePt nanoparticles under mild conditions without any pretreatment. When the bundle size of HiPCO SWNTs is about 20 nm, FePt NPs mostly attach on the sidewalls of SWNTs. The loading of FePt nanoparticles on the SWNTs bundles can be conveniently controlled by adjusting the initial amount of FePt NPs. The nanocomposite showed magnetic properties in a magnetic field. TEM, HRTEM, and EDS spectra were performed to observe the nanostructure of these nanocomposites.

Characterization of Indium Segregation in Metalorganic Vapor Phase Epitaxy-Grown InGaP by Schottky Barrier Height Measurement

2011 ◽  
Vol 50 (1R) ◽  
pp. 011201 ◽  
Author(s):  
Osamu Ichikawa ◽  
Noboru Fukuhara ◽  
Masahiko Hata ◽  
Takayuki Nakano ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Vapor Phase ◽  
Schottky Barrier Height ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Height Measurement

scholarly journals Synthesis and characterization of nanoscale composite particles formed by 2D layers of Cu-Fe sulfide and Mg-based hydroxide

2022 ◽  
Author(s):  
Yuri Mikhlin ◽  
Roman Borisov ◽  
Sergey Vorobyev ◽  
Yevgeny Tomashevich ◽  
Alexander Romanchenko ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Magnetic Behavior ◽  
Hyperfine Fields ◽  
Minority Spin ◽  
Dielectric Resonance ◽  
Magnetic Dynamic ◽  
Potential Applications ◽  
20 Nm ◽  
Electron Energy Loss

We introduce here a multifunctional material composed of alternating atomic sulfide sheets close to CuFeS2 and Mg-based hydroxide ones (valleriite), which are assembled due to their electric charges of opposite sign. Valleriite particles of 50-200 nm in the lateral size and 10-20 nm thick were synthesized via a simple hydrothermal pathway using various concentrations of precursors and dopants, and examined with XRD, TEM, EDS, X-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy (REELS), Mössbauer, Raman and UV-vis-NIR spectroscopies, magnetic, dynamic light scattering, zeta potential measurements. The electronic, magnetic and optical characteristics are found to be critically dependent of the charge (electron density) at the narrow-gap sulfide layers containing Cu+ and Fe3+ cations, and can be tuned via the composition of hydroxide part. Particularly, substitution of Mg2+ with Al3+ increases the negative charge of the hydroxide layers and reduces the content of Fe3+-OH centers (10-45% of total iron); the effects of Cr and Co dopants entering both layers are more complicated. Mössbauer doublets of paramagnetic Fe3+ detected at room temperature transform to several Zeeman sextets at 4.2 K; the hyperfine fields up to 500 kOe and complex magnetic behavior, but not pure paramagnetism or antiferromagnetism, were observed for valleriites with the higher positive charge of the sulfide sheets, probably due to the depopulation of the minority-spin 3d states of S-bonded Fe3+ ions. Aqueous colloids of valleriite show optical absorption at 500 - 750 nm, which, along with the peaks at the same energies in REELS, may arise due to quasi-static dielectric resonance involving the vacant Fe 3d band and being dependent on the composition of both layers too. These and other findings call attention to the of valleriites as a new rich family of 2D materials for a variety of potential applications.

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height

2021 ◽  
Author(s):  
Takuma Doi ◽  
Shigehisa Shibayama ◽  
Mitsuo Sakashita ◽  
Kazutoshi Kojima ◽  
Mitsuaki Shimizu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Force Microscopy ◽  
Flat Interface ◽  
Low Temperature Annealing ◽  
Atomic Force ◽  
Low Temperature Process

Abstract To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type 4H-SiC interface to low-temperature annealing. Our results revealed that annealing at 200 °C reduced SBH; a low SBH of 0.28 eV was obtained on the lightly doped substrate. Atomic force microscopy measurements revealed negligible increase in the surface roughness after Mg deposition and annealing. Using the low-temperature process, a contact resistivity of 6.5 × 10−5 Ω⋅cm2 was obtained on the heavily doped substrate, which is comparable to Ni/4H-SiC subjected to annealing of above 950 °C.

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