Epitaxial Growth on Simox Wafers

1985 ◽  
Vol 53 ◽  
Author(s):  
Hon Wai Lam
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Special Care ◽  
Material Structure ◽  
Oxygen Ion ◽  
Support Device ◽  
Oxygen Ion Implantation

ABSTRACTThe top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin,less than 500 nm) and because of the material structure of the S1MOX wafer, special care has to.be exercised in order to obtain desirable epitaxial growth. This paper describes the unique problems of epitaxial growth on SIMOX.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

The Top Silicon Layer of SOI Formed by Oxygen Ion Implantation

1983 ◽  
Vol 30 (2) ◽  
pp. 1718-1721 ◽  
Author(s):  
R. F. Pinizzotto ◽  
B. L. Vaandrager ◽  
S. Matteson ◽  
H. W. Lam ◽  
S. D. S. Malhi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Layer ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

scholarly journals Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation

2004 ◽  
Vol 95 (3) ◽  
pp. 877-880 ◽  
Author(s):  
J. P. de Souza ◽  
C. A. Cima ◽  
P. F. P. Fichtner ◽  
H. Boudinov
Keyword(s):  
Ion Implantation ◽  
Amorphous Silicon ◽  
Silicon Layer ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation

1981 ◽  
Vol 7 ◽  
Author(s):  
R.F. Pinizzotto ◽  
B.L. Vaandrager ◽  
H.W. Lam
Keyword(s):  
Electron Microscopy ◽  
Dislocation Density ◽  
Ion Implantation ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Cross Sectional ◽  
Plan View ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

ABSTRACTCross-sectional and plan view transmission electron microscopy and high resolution scanning electron microscopy have been used to characterize the microstructure of silicon-on-insulator formed by high dose oxygen ion implantation. The complete microstructure was observed to be composed of a series of distinct zones. The top silicon layer was {100} single crystal with a very low dislocation density. The second layer was a mixture of fine grained polysilicon and amorphous SiO2. The third layer was pure SiO2 , followed by a second mixed layer. Finally, there was a layer of {100} silicon with an extremely high dislocation density. Some of the dislocations extended as far as 1 μm into the Si substrate. The relative widths of the layers were found to depend on the total ion fluence. The oxide layer did not occur for low doses and the two mixed layers merged into one zone. At high doses, the silicon-silicon dioxide interfaces are abrupt due to internal oxidation.

Epitaxial Growth of SiO2Produced in Silicon by Oxygen Ion Implantation

1996 ◽  
Vol 77 (20) ◽  
pp. 4206-4209 ◽  
Author(s):  
V. V. Afanas'ev ◽  
A. Stesmans ◽  
M. E. Twigg
Keyword(s):  
Ion Implantation ◽  
Epitaxial Growth ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Improved surface corrosion resistance of WE43 magnesium alloy by dual titanium and oxygen ion implantation

2013 ◽  
Vol 529 ◽  
pp. 407-411 ◽  
Author(s):  
Ying Zhao ◽  
Guosong Wu ◽  
Qiuyuan Lu ◽  
Jun Wu ◽  
Ruizhen Xu ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Magnesium Alloy ◽  
Ion Implantation ◽  
Surface Corrosion ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
We43 Magnesium Alloy

Microstructural and Compositional Characterization of SiC-On-Insulator Structures

1999 ◽  
Vol 5 (S2) ◽  
pp. 770-771
Author(s):  
Manabu Ishimaru ◽  
Robert M. Dickerson ◽  
Kurt E. Sickafus
Keyword(s):  
Ion Implantation ◽  
Integrated Circuit ◽  
High Speed ◽  
Scanning Transmission Electron Microscope ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Oxygen Ion Implantation

As the size of Si integrated circuit structures is continually reduced, interest in semiconductor-oninsulator (SOI) structures has heightened. SOI structures have already been developed for Si using oxygen ion implantation. However, the application of Si devices is limited due to the physical properties of Si. As an alternative to Si, SiC is a potentially important semiconductor for high-power, high-speed, and high-temperature electronic devices. Therefore, this material is a candidate for expanding the capabilities of Si-based technology. In this study, we performed oxygen ion implantation into bulk SiC to produce SiC-on-insulator structures. We examined the microstructures and compositional distributions in implanted specimens using transmission electron microscopy and a scanning transmission electron microscope equipped with an energy-dispersive X-ray spectrometer (STEM-EDX).Figures 1(a) and 2(a) show bright-field images of 6H-SiC implanted with 180 keV oxygen ions at 650 °C to fluences of 7xl017 and 1.4xl018 cm−2, respectively. Three regions with distinct image contrast are apparent in Figs. 1(a) and 2(a), as indicated by A, B, and C.

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