Strain Mapping in InGaAsP Epitaxial Films by An X-Ray Diffraction Technique

1985 ◽  
Vol 54 ◽  
Author(s):  
Jharna Chaudhuri ◽  
William E. Mayo ◽  
Sigmund Weissmann
Keyword(s):  
Electronic Materials ◽  
Strain Tensor ◽  
Diffraction Method ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Strain Mapping ◽  
Rocking Curve ◽  
X Ray ◽  
Inp Substrate ◽  
Elastic Strain Tensor

ABSTRACTA new x-ray diffraction method is developed to determine the full elastic strain tensor and its distribution about a strain center in single crystal materials. It is based on the recently developed Computer Aided Rocking Curve Analyzer and is particularly well suited for analysis of thin film structures common to electronic materials. This technique will be described in detail, and its application in measuring the non-uniform strains in InGaAsP epitaxial film on InP substrate will be presented. Also, possibility of using this method to measure the uniformity of film thickness will be discussed.

Subsurface Micro-Lattice Strain Mapping

1986 ◽  
Vol 90 ◽  
Author(s):  
T. S. Ananthanarayanan ◽  
R. G. Rosemeier ◽  
W. E. Mayo ◽  
P. Becla
Keyword(s):  
Diffraction Method ◽  
Epitaxial Films ◽  
Depth Of Penetration ◽  
Ir Detector ◽  
Strain Mapping ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Microplastic Strain ◽  
Invaluable Tool

SYNOPSISDefect morphology and distribution up to depths of 20um have been shown to be critical to device performance in micro-electronic applications. A unique and novel x-ray diffraction method called DARC (Digital Automated Rocking Curve) topography has been effectively utilized to map crystalline micro-lattice strains in various substrates and epitaxial films. The spatial resolution of this technique is in the the order of 100um and the analysis time for a 2cm2 area is about 10 secs. DARC topography incorporates state-ofthe- art 1-dimensional and 2-dimensional X-ray detectors to modify a conventional Double Crystal Diffractometer to obtain color x-ray rocking curve topographs.This technique, being non-destructive and non-intrusive in nature, is an invaluable tool in materials’ quality control for IR detector fabrication. The DARC topographs clearly delineate areas of microplastic strain inhomogeniety. Materials analyzed using this technique include HgMnTe, HgCdTe, BaF2, PbSe, PbS both substrates and epitaxial films. By varying the incident x-ray beam wavelength the depth of penetration can be adjusted from a 1–2 micron up to 15–20um. This can easily be achieved in a synchrotron.

Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 82 ◽  
Author(s):  
T. S. Ananthanarayanan ◽  
R. G. Rosemeier ◽  
W. E. Mayo ◽  
J. H. Dinan
Keyword(s):  
Bragg Reflection ◽  
Strain Tensor ◽  
Epitaxial Films ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Density Maps ◽  
First Time ◽  
Considerable Body ◽  
Double Crystal Diffractometer

SUMMARYThere is a considerable body of work available illustrating the significance of X-ray rocking curve measurements in micro-electronic applications. For the first time a high resolution (100-150µm) 2-dimensional technique called DARC (Digital Autcmated Rocking Curve) topography has been implemented. This method is an enhancement of the conventional double crystal diffractometer using a real time 2-dimensional X-ray detector.Several materials have been successfully examined using DARC topography. Same of these include: Si, GaAs, AlGaAs, InGaAs, HgMnTe, Al, Inconel, steels, etc. By choosing the appropriate Bragg reflection multi-layered micro-electronic structures have been analyzed nondestructively. Several epitaxial films, including HgCdTe and ZnCdTe, grown by molecular beam epitaxy, have also been characterized using iARC topography. The rocking curve half width maps can be translated to dislocation density maps with relative ease. This technique also allows the deconvolution of the micro-plastic lattice strain ccaponent from the total strain tensor.

Thickness Measurement of Epitaxical Thin Films by X-ray Diffraction Method

1988 ◽  
Vol 32 ◽  
pp. 279-284
Author(s):  
J. Chaudhuri ◽  
S. Shah ◽  
J.P. Harbison
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Electronic Materials ◽  
Diffraction Method ◽  
Thickness Measurement ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Kinematical Theory ◽  
Double Crystal Diffractometer

AbstractA method was described for determining the thickness of epitaxical thin films common to electronic materials. The equations were developed based on the kinematical theory of X-ray diffraction and effects of both primary and secondary extinctions were considered. As an example of the applications of this method, thickness measurement of AlGaAs thin films on GaAs was demonstrated. These films were grown by molecular beam epitaxy. The integrated reflected intensities from the film and the substrate were obtained by the X-ray double crystal diffractometer. An excellent agreement was obtained between the results from X-ray measurements and RHEED oscillation data.

scholarly journals Stress Analysis by Kossel Microdiffraction on a Nickel-Based Single Crystal Superalloy during an In Situ Tensile Test – Comparison with Classical X-Ray Diffraction

2011 ◽  
Vol 681 ◽  
pp. 1-6 ◽  
Author(s):  
Denis Bouscaud ◽  
Raphaël Pesci ◽  
Sophie Berveiller ◽  
Etienne Patoor
Keyword(s):  
Crystallographic Orientation ◽  
Elastic Strain ◽  
Strain Tensor ◽  
Ccd Camera ◽  
X Ray Diffraction ◽  
Charge Coupled Device ◽  
X Ray ◽  
Set Up ◽  
Elastic Strain Tensor

A Kossel microdiffraction experimental set up is under development inside a Scanning Electron Microscope (SEM) in order to determine the crystallographic orientation as well as the inter- and intragranular strains and stresses. An area of about one cubic micrometer can be analysed using the microscope probe, which enables to study different kinds of elements such as a grain boundary, a crack, a microelectronic component, etc. The diffraction pattern is recorded by a high resolution Charge-Coupled Device (CCD) camera. The crystallographic orientation, the lattice parameters and the elastic strain tensor of the probed area are deduced from the pattern indexation using a homemade software. The purpose of this paper is to report some results achieved up to now to estimate the reliability of the Kossel microdiffraction technique.

Characterization of Epitaxial Films by X-Ray Diffraction

1985 ◽  
Vol 29 ◽  
pp. 353-366 ◽  
Author(s):  
Armin Segmüller
Keyword(s):  
Strain Tensor ◽  
Grazing Incidence ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Structural Details ◽  
Composition Profiles

AbstractIn this paper, the application of recently developed x-ray diffraction techniques to the characterization of thin epitaxial films will be discussed. The double-crystal diffractometer, with high resolution in the non-dispersive arrangement, enables the materials scientist to study epitaxial systems having a very small mismatch with high precision. A key part of the characterization of an epitaxial film is the determination of the strain tensor by measuring lattice spacing! in various directions The determination of strain and composition profiles in ion-implanted films, epitaxial layers and superlattices by rocking-curve analysis will also be reviewed. Grazingincidence diffraction, an emerging new technique, can be used to obtain structural details parallel to the interface on films with thicknesses ranging down to a few atomic layers. The synchroton has now become increasingly available as a powerful source of x radiation which will facilitate the application of conventional and grazing-incidence diffraction to ultra-thin films.

Pole Figure Analysis of Epitaxial Films of ZnO:2wt%Al Grown on Sapphire Substrates by RF Magnetron Sputtering

2002 ◽  
Vol 721 ◽  
Author(s):  
P. Kuppusami ◽  
S. Fiechter ◽  
K. Ellmer
Keyword(s):  
Magnetron Sputtering ◽  
Pole Figure ◽  
Room Temperature ◽  
Defect Density ◽  
Rf Magnetron Sputtering ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractAluminium-doped zinc oxide (ZnO:Al) films have been grown on c-plane (001) and a-plane (110) sapphire by RF magnetron sputtering from a ceramic target. The films grew epitaxially, even at room temperature. However, the crystalline quality depends both on the substrate temperature as well as on the sapphire orientation. The best films, proved by X-ray diffraction (rocking curves and pole figure measurements) were grown on (110)-oriented sapphire in the temperature range 473 to 773 K. The minimum rocking curve half width was about 0.75 °. By Rutherford backscattering analysis it could be shown, that the films exhibit a significant variation of the defect density over the film thickness. The highest density, as expected, is observed at the interface sapphire/ZnO:Al. Films grown on (001)-oriented sapphire have higher rocking curve half widths (about 1.3 °) and exhibit sometimes two types of domains in the same film twisted by 30 °.

Growth and Properties of Epitaxial YBa2Cu3O7 thin Films on{1102}Al2O3

1989 ◽  
Vol 169 ◽  
Author(s):  
D. K. Fork ◽  
T. H. Geballe ◽  
K. Char ◽  
S. S. Laderman ◽  
R. Taber ◽  
...  
Keyword(s):  
Surface Resistance ◽  
Epitaxial Films ◽  
Full Width ◽  
Zero Temperature ◽  
X Ray Diffraction ◽  
Critical Temperatures ◽  
Rocking Curve ◽  
X Ray ◽  
Zero Resistance ◽  
Resistance Data

AbstractEpitaxial YBa2Cu3O7 (YBCO) films were grown on r‐plane A12O3 {1102} by laser ablation. X‐ray diffraction shows that films are epitaxial with the c‐axis perpendicular to the substrate and the a or b axes parallel to (2201), although the full width at half maximum of the rocking curve is larger compared to those of epitaxial films on SrTiO3. The critical temperatures (zero resistance) are between 85 K and 88 K with transition widths between 0.5 K and 3 K. The 300 K resistivity of 250 μΩextrapolates to zero at zero temperature and the critical current is as high as 5 x 106 A/cm2 at 4.2 K according to magnetization hysteresis measurements. Surface resistance data shows that 2000 Å thick epitaxial films on {1102} have about 1 mΩ at 13 GHz at 4.2 K.

High Resolution X-Ray Diffraction of Hg1-xMnx Te Epitaxial Films

1992 ◽  
Vol 280 ◽  
Author(s):  
B K Tanner ◽  
T D Hallam ◽  
M Funaki ◽  
A W Brinkman
Keyword(s):  
Epitaxial Films ◽  
Substantial Variation ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Contour Maps ◽  
Significant Difference ◽  
Direct Alloy ◽  
Cdznte Substrates ◽  
Layer Peak

ABSTRACTEpitaxial films of Hg1-xMnxTe (MMT) have been grown by direct alloy growth MOVPE. Perfection of layers grown on CdTe buffered GaAs, and unbuffered CdZnTe substrates has been assessed by double axis X-ray diffraction. No significant difference was observed in the rocking curve full width at half maximum (FWHM) between layers grown on the two types of substrate. Rocking curves taken as a function of position across the layer showed substantial variation, there being a very good correlation between layer thickness determined from the intensity of the substrate peak, layer rocking curve FWHM and Mn composition determined from the substrate and layer peak splitting. The contour maps of these parameters are discussed in terms of depletion of the DIPTe precursor.

A common theory of line broadening and rocking curves

2015 ◽  
Vol 48 (2) ◽  
pp. 418-430 ◽  
Author(s):  
Gyula Zilahi ◽  
Tamás Ungár ◽  
Géza Tichy
Keyword(s):  
Rigid Body ◽  
Electron Backscatter Diffraction ◽  
Strain Tensor ◽  
Theoretical Description ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Peak Broadening ◽  
Individual Grains

X-ray diffraction peak broadening is discussed in terms of line broadening and rocking-curve broadening in a novel theoretical description. The nonlocal strain tensor is factorized by using the method of polar decomposition instead of the more conventional separation into symmetrical and antisymmetrical components. A number of X-ray line-broadening and rocking-curve experiments on the same single crystals or individual grains in bulk polycrystals prove that plastic deformation produces strained subgrains mutually rotated by rigid-body rotations. The novel theoretical description appropriately accounts for the rigid-body rotation and strain at the same time and provides straightforward separation of the two effects of line and rocking-curve broadening in the radial and normal directions of the diffraction vector. The mathematical results are discussed in terms of experiments of X-ray diffraction, Laue asterism and electron backscatter diffraction. From the experimental results it is shown that the simultaneous evaluation of line and rocking-curve broadening provides qualitative information about the redundant and geometrically necessary character of dislocations, not available if only one or the other is accessible.

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