Pole Figure Analysis of Epitaxial Films of ZnO:2wt%Al Grown on Sapphire Substrates by RF Magnetron Sputtering

2002 ◽  
Vol 721 ◽  
Author(s):  
P. Kuppusami ◽  
S. Fiechter ◽  
K. Ellmer

AbstractAluminium-doped zinc oxide (ZnO:Al) films have been grown on c-plane (001) and a-plane (110) sapphire by RF magnetron sputtering from a ceramic target. The films grew epitaxially, even at room temperature. However, the crystalline quality depends both on the substrate temperature as well as on the sapphire orientation. The best films, proved by X-ray diffraction (rocking curves and pole figure measurements) were grown on (110)-oriented sapphire in the temperature range 473 to 773 K. The minimum rocking curve half width was about 0.75 °. By Rutherford backscattering analysis it could be shown, that the films exhibit a significant variation of the defect density over the film thickness. The highest density, as expected, is observed at the interface sapphire/ZnO:Al. Films grown on (001)-oriented sapphire have higher rocking curve half widths (about 1.3 °) and exhibit sometimes two types of domains in the same film twisted by 30 °.

2008 ◽  
Vol 396-398 ◽  
pp. 369-372 ◽  
Author(s):  
Alexandre Mello ◽  
Elena Mavropoulos ◽  
Zhen Hong ◽  
J.B. Ketterson ◽  
Antonella M. Rossi

Hydroxyapatite (HAP) crystalline thin-coatings have been grown using a right angle RF magnetron sputtering approach at room temperature. The surface structural information of these biocompatible coatings at nanometer scales was obtained by glancing-incidence X-ray diffraction (GIXRD) with synchrotron radiation. The GIXRD spectra were obtained by fixed incidence theta angles at 0.5 and 1 degree. Structural profile analyses were performed over these nano-coating layers with reduced substrate interference. The coating thickness was calibrated by specular X-ray reflectivity (XRR) curves. Experiments have been performed on thin-coatings of HAP sputtered on silicon wafers and acid etched titanium discs at room temperature. GIXRD analysis has shown that all the principal peaks are attributed to a crystalline HAP. Previous tests of biocompatibility with osteoblasts cells have been encouraging studies on the surface of hydroxyapatite thin coatings prepared by opposing RF magnetron sputtering approach, as a promising candidate for bioimplant materials.


2006 ◽  
Vol 20 (01) ◽  
pp. 73-83
Author(s):  
M. XU ◽  
S. XU ◽  
V. M. NG ◽  
S. Y. HUANG ◽  
J. W. CHAI ◽  
...  

SiCN nanoparticle films were prepared by plasma RF magnetron sputtering under a mixture flow of N 2, Ar , and H 2, and optimized in visible photoluminescence (PL) by controlling the N 2 flux. The highest PL intensity was obtained as the N 2 flow rate was set at a moderate value, i.e. 6.4 sccm when the flow rates of Ar and H 2 were 35.2 and 9.6 sccm, respectively. Furthermore, for the sample grown at 400°C, a significant improvement in photoluminescence can be achieved with annealing at 1100°C under N 2 protection, in contrast to that grown at room temperature. The structure and chemical bonding analyzed by X-ray diffraction, X-ray photoelectron spectrum, and Fourier-Transform Infrared spectrum, respectively, revealed that the content of the SiCN nanoparticle, C – N , N – H , and Si – O bonds significantly affect the PL in the SiCN nanoparticle films.


2020 ◽  
Vol 1012 ◽  
pp. 119-124
Author(s):  
Paulo Victor Nogueira da Costa ◽  
Rodrigo Amaral de Medeiro ◽  
Carlos Luiz Ferreira ◽  
Leila Rosa Cruz

This work investigates the microstructural and morphological changes on CIGS thin films submitted to a post-deposition heat treatment. The CIGS 1000 nm-thick films were deposited at room temperature by RF magnetron sputtering onto glass substrates covered with molybdenum films. After deposition, the samples were submitted to a heat treatment, with temperatures ranging from 450 to 575 oC. The treatment was also carried out under a selenium atmosphere (selenization), from 400 to 500 oC. Morphological analyzes showed that the as-deposited film was uniform and amorphous. When the treatment was carried out without selenization, the crystallization occurred at or above 450 oC, and the grains remained nanosized. However, high temperatures led to the formation of discontinuities on the film surface and the formation of extra phases, as confirmed by X-ray diffraction data. The crystallization of the films treated under selenium atmosphere took place at lower temperatures. However, above 450 °C the film surface was discontinuous, with a lot of holes, whose amount increased with the temperature, showing that the selenization process was very aggressive. X-ray diffraction analyses showed that the extra phases were eliminated during selenization and the films had a preferential orientation along [112] direction. The results indicate that in the manufacturing process of solar cells, CIGS films deposited at room temperature should be submitted to a heat treatment carried out at 450 °C (without selenization) or 400 °C (with selenization).


2013 ◽  
Vol 543 ◽  
pp. 277-280
Author(s):  
Marius Dobromir ◽  
Alina Vasilica Manole ◽  
Simina Rebegea ◽  
Radu Apetrei ◽  
Maria Neagu ◽  
...  

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.


2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.


2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.


2019 ◽  
Vol 372 ◽  
pp. 442-450 ◽  
Author(s):  
I. Cosme ◽  
S. Vázquez-y-Parraguirre ◽  
O. Malik ◽  
S. Mansurova ◽  
N. Carlos ◽  
...  

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.


2009 ◽  
Vol 79-82 ◽  
pp. 931-934 ◽  
Author(s):  
Liang Tang Zhang ◽  
Jie Song ◽  
Quan Feng Dong ◽  
Sun Tao Wu

The polycrystalline V2O5 films as the anode in V2O5 /LiPON /LiCoO2 lithium microbattary were prepared by RF magnetron sputtering system. The V2O5 films’ crystal structures, surface morphologies and composition were characterized and analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The microbatteries were fabricated by micro electro-mechanical system (MEMS) technology. The battery active unit area is 500μm×500μm, and the thickness of V2O5, LiPON and LiCoO2 films was estimated to be 200, 610, and 220nm, respectively. The discharge volumetric capacity is between 9.36μAhcm-2μm-1 and 9.63μAhcm-2μm-1 after 40 cycles.


2013 ◽  
Vol 302 ◽  
pp. 146-150
Author(s):  
L.L. Li ◽  
Qiu Xiang Liu ◽  
Yan Zou ◽  
Xin Gui Tang ◽  
Yan Ping Jiang

Bi0.9Nd0.1FeO3 (BNFO) films were deposited on Si (100) and (La,Sr)(Al,Ta)O3 (100) (LAST) substrate by radio frequency (RF) magnetron sputtering method respectively. The structure,morphology and magnetic properties were studied. X-ray diffraction (XRD) result indicates that the BNFO films on different substrate adopted different orientation. Cross-section scanning electron microscopy shows that the film thickness is 145 nm.Magnetic properties measurement shows that the film on Si(100) substrate has the larger saturation magnetization (Ms) of 3 686 emu/cm3, while the Ms value of the BNFO films on LSAT(100) substrate is only 1 213 emu/cm3.


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