Sink Strength Evolution of Heavy Ion Irradiated Nickel

1998 ◽  
Vol 540 ◽  
Author(s):  
P. Fielitz ◽  
M.-P. Macht ◽  
V. Naundorf ◽  
H. Wollenberger
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Irradiation Temperature ◽  
Sink Strength ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Spatially Resolved ◽  
Radiation Enhanced Diffusion ◽  
Strength Evolution ◽  
Different Depths

AbstractAtom transport under irradiation is determined by the concentration of freely migrating defects, which depends on the dynamical equilibrium between production and annihilation rates. In order to determine effective values of both of these quantities for the case of ion irradiation, spatially resolved self-diffusion measurements were performed on single crystals of nickel which contained several thin tracer layers at different depths.For fixed depth the radiation-enhanced diffusion coefficient (DK) was determined as function of displacement rate (K0) and fluence (Φ). The DK essentially representing the ratio of the rates of production and annihilation was found to be proportional to K0 for 800 K irradiation temperature and to K00.4for Ni and K00.4for Kr irradiation at 950 K. It is independent of Φ for 800 K and decreases with increasing Φ for 950 K.

Atom Transport in Nickel by Displacement Cascades for Spatially Dependent Displacement Rate and Sink Strength

1996 ◽  
Vol 439 ◽  
Author(s):  
H. Wollenberger ◽  
P. Fielitz ◽  
M.-P. Macht ◽  
V. Naundorf
Keyword(s):  
Diffusion Equation ◽  
Single Crystals ◽  
Ion Irradiation ◽  
Displacement Rate ◽  
Sink Strength ◽  
Production Rates ◽  
Dynamical Equilibrium ◽  
Self Diffusion ◽  
Spatially Resolved ◽  
Different Depths

AbstractAtom transport under irradiation is determined by the concentration of freely migrating defects, which depends on the dynamical equilibrium between production and annihilation rates. In order to determine effective values of both of these quantities for the case of ion irradiation, spatially resolved self-diffusion measurements were performed on single crystals of nickel which contained several thin tracer layers at different depths. By fitting the solution of a diffusion equation to the depth dependent measurements effective fractional production rates of freely migrating defects and effective sink strengths have been obtained.

Exploring The Use of Pulsed Irradiations for Studying the Transient Sink Formed by Cascade Producing Radiation

1998 ◽  
Vol 540 ◽  
Author(s):  
Dale E. Alexander
Keyword(s):  
Ion Beam ◽  
Heavy Ion ◽  
Sink Strength ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Enhanced Diffusion ◽  
Diffusivity Measurements ◽  
Radiation Enhanced Diffusion ◽  
Irradiation Pulse ◽  
Pulsed Irradiation

AbstractAn approach is suggested for using pulsed irradiation experiments to study attributes of the transient sink formed by cascade producing radiation. As an example, a simple model of radiation enhanced diffusion is proposed for a dual ion beam irradiation in which one of the beams is a pulsed, sink-producing heavy ion. It is demonstrated that by combining this model with diffusivity measurements evaluated as a function of the irradiation pulse wavelength, it is possible to quantitatively determine the transient sink strength and its characteristic lifetime.

scholarly journals Correction to: Theoretical prediction of radiation-enhanced diffusion behavior in nickel under self-ion irradiation

2020 ◽  
Vol 31 (9) ◽  
Author(s):  
Xiao-Ya Chen ◽  
A-Li Wen ◽  
Cui-Lan Ren ◽  
Cheng-Bin Wang ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Theoretical Prediction ◽  
Ion Irradiation ◽  
Diffusion Behavior ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion

Evidence for Thermal Spike Effects in Ion-Irradiated Ni3Al

1998 ◽  
Vol 540 ◽  
Author(s):  
M. L. Jenkins ◽  
P. Mavani ◽  
S. Müller ◽  
C. Abromeit
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Irradiation Temperature ◽  
Number Density ◽  
Thermal Spike ◽  
Sharp Fall ◽  
Heavy Ion Irradiation ◽  
The Mean

AbstractThe influence of the irradiation temperature Tirr on the development of disordered zones produced at displacement cascades in Ni3A1 by heavy-ion irradiation with 50 keV Ta+ and 300 keV Ni+ ions has been investigated. The normalised number density (yield) of disordered zones for 300 keV Ni+ irradiation showed a sharp fall between Tirr= 373 K and 573 K. For 50 keV Ni+ irradiation there was a similar fall between 573 K and 673 K. The mean diameters of the disordered zones produced by 300 keV Ni+ ions decreased by about 2 nm between room temperature and 573 K, and there was a tendency for larger zones to become more regular in shape. For 50 keV Ta+ ions, a similar trend was observed between 573 K and 873 K. An annealing experiment confirmed that disordered zones produced at lower temperatures were stable up to a temperature of about 673 K, showing that these trends cannot be due to thermal annealing of disordered zones. The experimental results are consistent with an increased tendency for reordering at the peripheries of disordered zones, due to the increased lifetimes of thermal spikes at higher irradiation temperatures.

Radiation Enhanced Diffusion in Ion-Implanted Glasses and Glass/Metal Couples

1983 ◽  
Vol 27 ◽  
Author(s):  
G. W. Arnold
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Diffusion Mechanism ◽  
Glass Network ◽  
Heavy Ion ◽  
Rutherford Backscattering ◽  
Enhanced Diffusion ◽  
Mixed Alkali ◽  
Radiation Enhanced Diffusion ◽  
Glass Metal ◽  
Ion Implanted

ABSTRACTIon implantation causes alkali migration to the surface in alkali silicate glasses. Rutherford backscattering spectrometry was used to follow this depletion. Room temperature implantations of 5×1016 250 keV Xe/cm2 in 12M20·88SiO2 (M = Li,Na,K,Rb,Cs) removes approximately equal numbers (within a factor of 2) of alkali from the glass. Low temperature (77K) implants significantly reduce the alkali loss. These results imply a radiationenhanced diffusion mechanism in which the alkali interchanges with the products of the collision cascade, with the kinetics being limited by the radiation damage components. The results for mixed-alkali glasses ((12−x)M2O·xCs20·88Si02) give further evidence for this process. In glass/'metal couples, radiation enhanced diffusion allows the interchange of glass network components with deposited metals. Rutherford backscattering spectrometry was used to follow the interchange of silicate and phosphate glass components with metal ions near the heavy-ion implanted interface between glass substrate and metal (Al,Zr) films.

Metastable phase formation by ion mixing of Nb–Al multilayers

1989 ◽  
Vol 4 (6) ◽  
pp. 1385-1392 ◽  
Author(s):  
K. Pampus ◽  
K. Dyrbye ◽  
B. Torp ◽  
R. Bormann
Keyword(s):  
Solid Solution ◽  
Amorphous Phase ◽  
Phase Formation ◽  
Ion Irradiation ◽  
Metastable Phase ◽  
Heavy Ion ◽  
Free Energies ◽  
Transmission Electron ◽  
Radiation Enhanced Diffusion ◽  
Metastable Phase Formation

The structure of Nb–Al thin films after ion mixing was studied for compositions from 20 to 85 at. % Al as a function of temperature in the range between 40 and 620 K. The phase formation was determined by transmission electron microscopy. At lower temperatures, only supersaturated bcc-solid solution, NbAl, and amorphous phase were found throughout the studied composition range. Besides these phases irradiation at temperatures above 470 K causes the formation of a metastable crystalline compound at an overall composition close to Nb25Al75, and for T = 623 K the equilibrium compound NbAl3 is formed. The other intermetallic phases Nb2Al and Nb3Al have not been observed at any irradiation temperature. Calculations of the Gibbs free energies of the various phases are presented, and the reliability of extrapolations to regions of metastability with respect to temperature and composition is commented on. The phase formation during heavy-ion irradiation is discussed in the context of the calculated free energies and kinetic constraints. For temperatures above 300 K, the attainment of a metastable phase equilibrium between the bcc solid solution and the amorphous phase is proposed due to the influence of radiation enhanced diffusion.

The Influence of Dose Rate on the Formation of CrSi2 by Ion Mixing

1987 ◽  
Vol 93 ◽  
Author(s):  
S.-J. Kim ◽  
D. N. Jamieson ◽  
M-A. Nicolet ◽  
R. S. Averback
Keyword(s):  
Growth Rate ◽  
Dose Rate ◽  
Ion Irradiation ◽  
Diffusion Theory ◽  
Layer Compound ◽  
Enhanced Diffusion ◽  
Silicide Layer ◽  
Radiation Enhanced Diffusion ◽  
Lower Dose Rate ◽  
The Relationship

ABSTRACTThe relationship between growth rate of CrSi2 and dose rate during Xe ion irradiation at 500K is investigated. Dose raies difffering by up to a factor of 40 have been utilized to study the relationship. For a fixed total dose, a lower dose rate results in a thicker silicide layer compound to a higher dose rate. The results are explained from radiation-enhanced diffusion theory.

scholarly journals The Effect of Ion Irradiation on Inert Gas Bubble Mobility

1991 ◽  
Vol 235 ◽  
Author(s):  
Dale E. Alexander ◽  
R. C. Birtcher
Keyword(s):  
Electron Microscopy ◽  
Volume Diffusion ◽  
Ion Irradiation ◽  
Diffusion Mechanism ◽  
Inert Gas ◽  
Gas Bubble ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Radiation Enhanced Diffusion ◽  
Bubble Transport

ABSTRACTThe effect of Al ion irradiation on the mobility of Xe gas bubbles in Al thin films was investigated. Transmission electron microscopy was used to determine bubble diffusivities in films irradiated and/or annealed at 673K, 723K and 773K. Irradiation increased bubble diffusivity by a factor of 2–9 over that due to thermal annealing alone. The Arrehnius behavior and dose rate dependence of bubble diffusivity are consistent with a radiation enhanced diffusion phenomenon affecting a volume diffusion mechanism of bubble transport.

Heavy ion irradiation of glasses: Enhanced diffusion and preferential sputtering of alkali elements

1986 ◽  
Vol 98 (1-4) ◽  
pp. 101-108 ◽  
Author(s):  
G. Battaglin ◽  
A. Boscoletto ◽  
G. Della Mea ◽  
G. De Marchi ◽  
P. Mazzoldi ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Enhanced Diffusion ◽  
Heavy Ion Irradiation ◽  
Preferential Sputtering ◽  
Alkali Elements
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