Radiation Enhanced Diffusion in Ion-Implanted Glasses and Glass/Metal Couples

1983 ◽  
Vol 27 ◽  
Author(s):  
G. W. Arnold
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Diffusion Mechanism ◽  
Glass Network ◽  
Heavy Ion ◽  
Rutherford Backscattering ◽  
Enhanced Diffusion ◽  
Mixed Alkali ◽  
Radiation Enhanced Diffusion ◽  
Glass Metal ◽  
Ion Implanted

ABSTRACTIon implantation causes alkali migration to the surface in alkali silicate glasses. Rutherford backscattering spectrometry was used to follow this depletion. Room temperature implantations of 5×1016 250 keV Xe/cm2 in 12M20·88SiO2 (M = Li,Na,K,Rb,Cs) removes approximately equal numbers (within a factor of 2) of alkali from the glass. Low temperature (77K) implants significantly reduce the alkali loss. These results imply a radiationenhanced diffusion mechanism in which the alkali interchanges with the products of the collision cascade, with the kinetics being limited by the radiation damage components. The results for mixed-alkali glasses ((12−x)M2O·xCs20·88Si02) give further evidence for this process. In glass/'metal couples, radiation enhanced diffusion allows the interchange of glass network components with deposited metals. Rutherford backscattering spectrometry was used to follow the interchange of silicate and phosphate glass components with metal ions near the heavy-ion implanted interface between glass substrate and metal (Al,Zr) films.

Sink Strength Evolution of Heavy Ion Irradiated Nickel

1998 ◽  
Vol 540 ◽  
Author(s):  
P. Fielitz ◽  
M.-P. Macht ◽  
V. Naundorf ◽  
H. Wollenberger
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Irradiation Temperature ◽  
Sink Strength ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Spatially Resolved ◽  
Radiation Enhanced Diffusion ◽  
Strength Evolution ◽  
Different Depths

AbstractAtom transport under irradiation is determined by the concentration of freely migrating defects, which depends on the dynamical equilibrium between production and annihilation rates. In order to determine effective values of both of these quantities for the case of ion irradiation, spatially resolved self-diffusion measurements were performed on single crystals of nickel which contained several thin tracer layers at different depths.For fixed depth the radiation-enhanced diffusion coefficient (DK) was determined as function of displacement rate (K0) and fluence (Φ). The DK essentially representing the ratio of the rates of production and annihilation was found to be proportional to K0 for 800 K irradiation temperature and to K00.4for Ni and K00.4for Kr irradiation at 950 K. It is independent of Φ for 800 K and decreases with increasing Φ for 950 K.

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

scholarly journals Diffusion, Precipitation, and Cavity-Wall Reactions of Ion-Implanted Gold in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
S.M. Myers ◽  
G.A. Petersen
Keyword(s):  
Ion Implantation ◽  
Solubility Product ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Cavity Wall ◽  
Temperature Range ◽  
Order Of Magnitude ◽  
Diffusion Precipitation ◽  
Ion Implanted

AbstractThe diffusion of Au in Si and its binding to cavities and to precipitates of the equilibrium Au-Si phase were investigated in the temperature range 1023-1123 K using ion implantation and Rutherford backscattering spectrometry. The diffusivity-solubility product for interstitial Au was found to be about an order of magnitude greater than the extrapolation of previous, indirect determinations at higher temperatures. Chemisorption on cavity walls was shown to be more stable than Au-Si precipitation by 0.1-0.3 eV in the investigated temperature range, indicating that cavities are effective gettering centers for Au impurities.

Radiation-enhanced diffusion in ion-implanted glass

1993 ◽  
Vol 56 (6) ◽  
pp. 555-559 ◽  
Author(s):  
D.-E. Arafah ◽  
Y. Al-Ramadin
Keyword(s):  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Ion Implanted

Photoluminescence and Rutherford backscattering spectrometry study of ion-implanted -doped planar waveguides

1998 ◽  
Vol 10 (14) ◽  
pp. 3275-3283 ◽  
Author(s):  
B Herreros ◽  
G Lifante ◽  
F Cussó ◽  
J A Sanz ◽  
A Kling ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Planar Waveguides ◽  
Ion Implanted

scholarly journals Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (8) ◽  
pp. 1023
Author(s):  
И.Е. Тысченко ◽  
M. Voelskow ◽  
А.Н. Михайлов ◽  
Д.И. Тетельбаум
Keyword(s):  
Electron Microscopy ◽  
Diffusion Coefficient ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Subsequent Annealing ◽  
Energy Dispersive ◽  
X Ray ◽  
Enhanced Diffusion ◽  
Thermally Grown

AbstractBy means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO_2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As^+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO_2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is D _As = 3.2 × 10^–14 cm^2 s^–1.

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