Ferroelectric Behavior of Li-Doped ZnO Thin Films on Si(100) by Pulsed Laser Deposition
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AbstractThin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17 and 0.3 have been prepared on Si(100) substrate for the first time by pulsed laser deposition. These films are characterized for their structural, surface morphology and ferroelectric nature. A memory window of 1.2V has been observed in capacitance-voltage measurement.
2017 ◽
Vol 725
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pp. 1106-1114
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2002 ◽
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2006 ◽
Vol 294
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pp. 427-431
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2008 ◽
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pp. 497-501
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2006 ◽
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2008 ◽
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pp. 207-209
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