Optimization of High Efficiency Amorphous Silicon Alloy based Triple-Junction Modules

1999 ◽  
Vol 557 ◽  
Author(s):  
A. Banerjee ◽  
J. Yang ◽  
S. Guha

AbstractA systematic approach has been used to scale up high efficiency 0.25cm2 active-area amorphous Si alloy based triple-junction devices to high-efficiency encapsulated modules of aperture area ~920cm2. In order to analyze the losses involved in the scale-up, intermediate aperture area, 40cm2 and 450cm2, modules have also been fabricated. The best stable active-area efficiency obtained on the small-area cells is 12.9%. The best initial efficiency of a ~920cm2 aperture area encapsulated module is 12.1%. National Renewable Energy Laboratory (NREL) has independently light soaked three of the ~920cm2 modules. They have measured a stable efficiency of 10.5% which represents a new world record. This paper presents various aspects of the large-area module work.

1991 ◽  
Vol 219 ◽  
Author(s):  
Murray S. Bennett ◽  
A. Catalano ◽  
J. Newton ◽  
C. Poplawski ◽  
R. Arya ◽  
...  

ABSTRACTThree junction a-Si based photovoltaic modules have been made using a design which provides high initial efficiency and good resistance to photodegradation. The cells have a Si/Si/SiGe configuration in which the i-layer in the middle junction is 4000Å thick. The most efficient module measured to date has an aperture area efficiency of 9.82%. This design will limit light-induced efficiency losses to 15% or less, based on small area results, however defect related problems have increased this value to 17 – 23%. Preliminary data on the effect of shunts on stability is presented. We discuss various concerns related to large area deposition and scale-up.


2010 ◽  
Vol 1245 ◽  
Author(s):  
Guozhen Yue ◽  
Laura Sivec ◽  
Baojie Yan ◽  
Jeff Yang ◽  
Subhendu Guha

AbstractWe report recent progress on hydrogenated nanocrystalline silicon (nc-Si:H) solar cells prepared at different deposition rates. The nc-Si:H intrinsic layer was deposited, using a modified very high frequency (MVHF) glow discharge technique, on Ag/ZnO back reflectors (BRs). The nc-Si:H material quality, especially the evolution of the nanocrystallites, was optimized using hydrogen dilution profiling. First, an initial active-area efficiency of 10.2% was achieved in a nc-Si:H single-junction cell deposited at ~5 Å/s. Using the improved nc-Si:H cell, we obtained 14.5% initial and 13.5% stable active-area efficiencies in an a-Si:H/nc-Si:H/nc-Si:H triple-junction structure. Second, we achieved a stabilized total-area efficiency of 12.5% using the same triple-junction structure but with nc-Si:H deposited at ~10 Å/s; the efficiency was measured at the National Renewable Energy Laboratory (NREL). Third, we developed a recipe using a shorter deposition time and obtained initial 13.0% and stable 12.7% active-area efficiencies for the same triple-junction design.


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-463-C4-466
Author(s):  
A. Madan ◽  
W. Czubatyj ◽  
J. Yang ◽  
J. McGill ◽  
S. R. Ovshinsky

2016 ◽  
Vol 9 (12) ◽  
pp. 3687-3692 ◽  
Author(s):  
Anish Priyadarshi ◽  
Lew Jia Haur ◽  
Paul Murray ◽  
Dongchuan Fu ◽  
Sneha Kulkarni ◽  
...  

A large area and highly stable perovskite solar module (10 cm × 10 cm, active area ∼70 cm2) is demonstrated using low cost processing methods and materials.


2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Banerjee ◽  
D. Beglau ◽  
T. Su ◽  
G. Pietka ◽  
G. Yue ◽  
...  

ABSTRACTWe report on the investigation of large area a-Si:H/a-SiGe:H double-junction and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cells prepared by our proprietary High Frequency (HF) glow discharge technique. For investigative purposes, we initially used the simpler double-junction structure. We studied the effect of: (1) Ge content, (2) cell thickness, and (3) SiH4 and GeH4 gas flow on the light-induced degradation of the solar cells. Our results show that the double-junction cells with different Ge concentration have open-circuit voltage (Voc) in the range of 1.62-1.75 V. Voc exhibits a flat plateau in the range of 1.65-1.72 V for both initial and stabilized states. The light-induced degradation for cells in this range of Voc is insensitive to the Ge content. In terms of thickness dependence of the intrinsic layers, we found that the initial efficiency increases with cell thickness in the thickness range 2000-4000 Å. However, light-induced degradation increases with increasing thickness. Consequently, the stabilized efficiency is invariant with cell thickness in the thickness range studied. The results of SiH4 and GeH4 gas flow on cell characteristics demonstrate that the deposition rate decreases by only 20% when the active gas flow is reduced to 0.25 times standard flow. The initial and stabilized efficiencies are similar. The information gleaned from the study was used to fabricate high efficiency, large area (~464 cm2) double- and triple-junction solar cells. The highest stable efficiency, as measured by NREL, was 9.8% and 11.0% for the double- and triple-junction structures, respectively.


2012 ◽  
Vol 468-471 ◽  
pp. 1912-1915
Author(s):  
Hui Zhi Ren ◽  
Ying Zhao ◽  
Xiao Dan Zhang ◽  
Hong Ge ◽  
Zong Pan Wang

We report on microcrystalline silicon thin films and a-Si:H/a-SiGe:H/μc-Si:H triple-junction p-i-n solar cells deposited on large-area glass substrate. Microcrystalline silicon (μc-Si:H) bottom cells were deposited at a VHF-PECVD deposition system with 40.68MHz. It is necessary to develop the uniformity of μc-Si:H thin films for large-area deposition of high-quality triple-junction solar cells. By optimizing the deposition parameters, μc-Si:H thin films have been obtained with good thickness and very good crystalline volume fractions uniformity over the whole substrates area. The triple-junction module have been successful fabricated. The best module on 0.79 m2 size substrates has an initial total-area efficiency of 8.35%.


1997 ◽  
Vol 467 ◽  
Author(s):  
A. Banerjee ◽  
J. Yang ◽  
S. Guha

ABSTRACTAn initial conversion efficiency of 13.5% has been obtained on a triple-junction triple-bandgap device fabricated in a large-area deposition reactor capable of producing one-square-foot modules. The intrinsic layer of the top cell is a wide bandgap amorphous silicon alloy. The middle and bottom cells employ high quality amorphous silicon-germanium alloy. The high efficiency of the triple-junction cell is attributed to the relative reduction of the optical loss in the top tunnel junction and the improvement in the quality of the middle and bottom component cells. Triple-junction devices with initial efficiency of 13.3% have shown saturation at 11.6% after light soaking. Modules of aperture area 909cm2 have been fabricated using an assembly process similar to the one being currently used in our manufacturing line. The module design consists of onelarge-area, high-current monolithic multijunction device. The status of the small-area devices andmodules is described


MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 991-996
Author(s):  
Kerem Cagatay Icli ◽  
Macit Ozenbas

ABSTRACTWe employed ultrasonic spray deposition method for production of high quality FTO thin film TCOs to be employed in a silver embedded grid type and monolithic type dye sensitized solar modules. Produced films exhibited dense and crystalline structure with homogeneous coverage on solar glass substrates. Obtained resistivity and light transmission values of FTO are comparable to commercially available FTO coated glasses used widely in the industry. After optimization of the chemistry and deposition conditions, 10x10 cm sized glass substrates could be produced for large area photovoltaic modules. Produced FTO films were used to construct monolithic type and parallel type dye sensitized solar modules. Monolithic modules yielded 1.61% active area efficiency value. In order to enhance the active area of the parallel type modules, silver grid lines were embedded in glass substrate and FTO coating was deposited on the lines. Due to this effective design, we achieved 2.42% efficiency on the total area of the 55x55 mm sized module compared to 2.90% active area efficiency, proving that this design is suitable for enhancing efficiency values of parallel type dye sensitized solar modules.


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