Thin-Film Oxide Phosphors as Electroluminescent Materials

1999 ◽  
Vol 558 ◽  
Author(s):  
Tadatsugu Minami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Binary Compound ◽  
Device Structure ◽  
Solution Deposition ◽  
Insulating Layer ◽  
Term Operation ◽  
Full Color ◽  
Color Filters

ABSTRACTIn this paper, we introduce rare earth- or transition metal-activated oxide phosphor thin films prepared by magnetron sputtering and dip-coated solution deposition. Thin-film electroluminescent (TFEL) devices using these oxide phosphor thin films as the emitting layer were investigated with a single insulating layer device structure using a thick ceramic sheet insulating layer. High-luminance multicolor emissions and high luminous efficiencies were obtained in TFEL devices using various oxide phosphors: binary compound, Ga2O3; ternary compound, Zn2SiO4, CaGa2O4 and ZnGa2O4; and multicomponent oxide, Zn2SiO4-Zn2GeO4 system. Luminances above 2000 cd/m2were obtained in CaGa2O4:Mn and Zn2Si1-XGeXO4:Mn TFEL devices driven at 1 kHz. Maximum luminous efficiencies of 2.53, 1.7 and 1.2 Im/W were obtained in Zn2Si0.7Ge0.3O4:Mn, Ga2O3:Mn and ZnGa2O4:Mn TFEL devices, respectively. Stable long-term operation was obtained in dip-coated and sputtered Ga2O3:Mn phosphor TFEL devices even when driven at 10 kHz. Various thin-film oxide phosphors activated with transition metals are suitable for the emitting layer of full-color electroluminescent displays (ELD) without the use of color filters. In particular, Ga2O3 is very promising as a phosphor host material for ELDs.

Thin-Film Oxide Phosphors as Electroluminescent Materials

1999 ◽  
Vol 560 ◽  
Author(s):  
Tadatsugu Minami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Binary Compound ◽  
Device Structure ◽  
Solution Deposition ◽  
Insulating Layer ◽  
Term Operation ◽  
Full Color ◽  
Color Filters

ABSTRACTIn this paper, we introduce rare earth- or transition metal-activated oxide phosphor thin films prepared by magnetron sputtering and dip-coated solution deposition. Thin-film electroluminescent (TFEL) devices using these oxide phosphor thin films as the emitting layer were investigated with a single insulating layer device structure using a thick ceramic sheet insulating layer. High-luminance multicolor emissions and high luminous efficiencies were obtained in TFEL devices using various oxide phosphors: binary compound, Ga2O3; ternary compound, Zn2SiO4, CaGa2O4 and ZnGa2O4; and multicomponent oxide, Zn2SiO4- Zn2GeO4 system. Luminances above 2000 cd/m2 were obtained in CaGa2O4:Mn and Zn2Si1−XGeXO4:Mn TFEL devices driven at 1 kHz. Maximum luminous efficiencies of 2.53, 1.7 and 1.2 lm/W were obtained in Zn2Si0.7Ge0.3O4:Mn, Ga2O3:Mn and ZnGa2O4:Mn TFEL devices, respectively. Stable long-term operation was obtained in dip-coated and sputtered Ga2O3:Mn phosphor TFEL devices even when driven at 10 kHz. Various thin-film oxide phosphors activated with transition metals are suitable for the emitting layer of full-color electroluminescent displays (ELD) without the use of color filters. In particular, Ga2O3 is very promising as a phosphor host material for ELDs.

scholarly journals Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Solution Technique ◽  
Term Stability ◽  
Long Term Stability ◽  
Process Method

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

scholarly journals Effect of annealing atmosphere on LiMn2O4 for thin film Li-ion batteries from aqueous chemical solution deposition

2016 ◽  
Vol 4 (47) ◽  
pp. 18457-18469 ◽  
Author(s):  
G. Maino ◽  
J. D'Haen ◽  
F. Mattelaer ◽  
C. Detavernier ◽  
A. Hardy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Solution Deposition ◽  
Annealing Atmosphere ◽  
Li Ion Batteries ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Current Collectors ◽  
Li Ion

Aqueous CSD provides LMO thin films at low T in a N2 ambient, eliminating issues with stacking and sensitive current collectors.

Low friction states for thin solid lubricant film of MoS2

2018 ◽  
Vol 70 (4) ◽  
pp. 639-644 ◽  
Author(s):  
Kwang-Hua R. Chu
Keyword(s):  
Thin Films ◽  
Solid Lubricant ◽  
Activation Volume ◽  
High Vacuum ◽  
Low Friction ◽  
Friction Behavior ◽  
Stick Slip ◽  
Content Type ◽  
Term Operation

Purpose During the operation of Wendelstein 7-X (W7-X), any mechanical disturbance such as stick-slip may cause quenching of superconducting (SC) coils. The friction behavior of MoS2 lubrication (thin film) for narrow support elements between the SC coils in W7-X is rather important, as there is a design requirement for a coefficient of friction (COF) 0.05 between the sliding surfaces to control the stress contribution (from friction). Design/methodology/approach The author has carried out intensive calibrations or verifications using verified models considering previous friction tests on various samples which measured the COF in 4.2 K, 77 K and room temperature conditions (at high vacuum) to simulate the actual working condition. Findings The author has given useful explanations and diagnosis for previous anomalous scattered data. To improve the performance of MoS2, the author has predicted its better COF (0.002 via tuning of the activation volume), which could be a superlubricating state for MoS2 thin films considering the long-term operation requirement W7-X. Originality/value In this paper, the author has adopted Eyring’s approach to predict the low COF (0.002 via tuning of the activation volume), which could be a superlubricating state for MoS2 thin films considering the long-term operation requirement W7-X. Finally, some recent progresses about the possible few-layer MoS2 role in the electromagnetic loads have been provided.

Preparation of (La,Sr)MnO3 Thin Film by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Silicon Substrate ◽  
Chemical Solution Deposition ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Ferroelectric Capacitor ◽  
Lower Electrical Resistivity

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.

Fabrication of MoS2 thin film transistors via selective-area solution deposition methods

2015 ◽  
Vol 3 (16) ◽  
pp. 3842-3847 ◽  
Author(s):  
Yang Xi ◽  
Martha Isabel Serna ◽  
Lanxia Cheng ◽  
Yang Gao ◽  
Mahmoud Baniasadi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molybdenum Disulfide ◽  
Thin Film Transistors ◽  
Solution Method ◽  
Solution Deposition ◽  
Selective Area

We report a simple and selective solution method to prepare molybdenum disulfide (MoS2) thin films for functional thin film transistors (TFTs).

Material Aspects of A-Sin:H Based 2D Direct X-Ray Sensor Array

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Popov ◽  
G. Van Doorselaer ◽  
A. Van Calster ◽  
H. De Smet ◽  
E. Boesman ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sensor Array ◽  
X Ray ◽  
Term Stability ◽  
Long Term Stability

ABSTRACTThe possibility of creating an 2D X-ray sensor array on the base of a-SiN:H thin films without switching elements and an X-ray conversion layer is presented in this report. The behavior of a-SiN:H Thin-Film Diode under X-ray irradiation, its limitations, and ways of increasing long-term stability and sensitivity of the sensor are discussed.

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