Growth and Characterization of InGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam Epitaxy

1999 ◽  
Vol 572 ◽  
Author(s):  
K. H. Shim ◽  
S. E. Hong ◽  
K. H. Kim ◽  
M. C. Paek ◽  
K. I Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Power Level ◽  
Rf Plasma ◽  
Rf Power ◽  
Island Growth ◽  
Structural And Optical Properties ◽  
Set Up ◽  
And Diffusion

Structural and optical properties of In0.2Ga0.8N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated as a function of rf plasma power. Indium incorporation resulted in the higher rf power level suppressing 3D island growth with reduced introduction of defects in In0.2Ga0 8N in comparison with GaN. Sharp morphology at interfaces and strong transitions in photoluminescence reveal the optimum rf power around 400 W in our experimental set up for the growth of In0.2Ga0.8N/GaN heterostructures. Our experimental observations suggest that the presence of indium on surface modulates the rate of plasma stimulated desorption and diffusion, and reduces the formation of damaged subsurface.

Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FG07 ◽  
Author(s):  
Hiroto Sekiguchi ◽  
Satoshi Nishikawa ◽  
Tomohiko Imanishi ◽  
Kohei Ozaki ◽  
Keisuke Yamane ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Structural And Optical Properties ◽  
Si Substrates

THE STUDY OF Al0.29Ga0.71N-BASED SCHOTTKY PHOTODIODES GROWN ON SILICON BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

2013 ◽  
Vol 27 (12) ◽  
pp. 1350085
Author(s):  
M. Z. MOHD YUSOFF ◽  
Z. HASSAN ◽  
C. W. CHIN ◽  
H. ABU HASSAN ◽  
M. J. ABDULLAH ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Rf Plasma ◽  
Yellow Emission ◽  
Band Edge Emission ◽  
Current Voltage ◽  
Standard Value ◽  
Schottky Photodiode

In this paper, the growth and characterization of epitaxial Al 0.29 Ga 0.71 N grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al 0.29 Ga 0.71 N layer on GaN / AlN / Si sample. We found that the dominant E 2 (high) phonon mode of GaN appears at 572.7 cm-1. The E 2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN . Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current–voltage (I–V) measurement to evaluate the performance of this device.

Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy

2004 ◽  
Vol 263 (1-4) ◽  
pp. 301-307 ◽  
Author(s):  
J.H. Huang ◽  
K.Y. Hsieh ◽  
J.K. Tsai ◽  
H.L. Huang ◽  
C.H. Hsieh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma

Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Hyonju Kim ◽  
T. G. Andersson ◽  
U. Södervall ◽  
C. Jäger ◽  
W. Jäger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Microstructural Characterization ◽  
Abnormal Behavior ◽  
Rf Plasma ◽  
Columnar Growth ◽  
Wurtzite Phase ◽  
Active Nitrogen ◽  
Transmission Electron

AbstractWe have investigated microstructural properties of GaAs:N and GaN:As layers using transmission electron microscopy. The samples were grown onto (001)-oriented GaAs substrates by RF-plasma assisted molecular beam epitaxy. It has been found that during the GaAs/GaAs:N epitaxial growth the supplied active nitrogen atoms gave rise to nanometer-size GaN crystallites formed in the GaAs matrix. In addition, silicon incorporation showed abnormal behavior at the two interfaces of the thin GaAs:N layer embedded in GaAs. A model is proposed for the formation of GaN crystallites in GaAs during the growth. In the GaN:As growth, the layer exhibited columnar growth, resulting in domains with different crystallographic orientation. With an increase of the film thickness, the zincblende structure changed to the wurtzite phase of GaN. The distribution of arsenic through the layer thickness was found to be inhomogeneous and be much higher near the GaN/GaAs interface compared to the region near the surface.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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