Crystallization Behaviour of Amorphous Si0.5Ge0.5 Films Observed by Positron Annihilation

1999 ◽  
Vol 581 ◽  
Author(s):  
F. Edelman ◽  
F. Börner ◽  
R. Krause-Rehrberg ◽  
P. Werner ◽  
R. Weil ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Amorphous Silicon ◽  
Solid Solutions ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Molecular Beam ◽  
Doppler Broadening ◽  
Boron Doped ◽  
Silicon And Germanium

ABSTRACTThe crystallization behavior (ordering) of undoped and boron-doped Si0.5Ge0.5 films, deposited on SiO2/Si(001) substrate by molecular beam epitaxy in hish vacuum at room temperature, were studied by XRD, HRTEM and in situ by Doppler broadening spectroscopy using monoenergetic positrons. Some decomposition features of SiGe solid solutions were demonstrated via splitting the XRD peaks at high temperatures. The SiGe decomposition was detected in the precrystalline state of the SiGe undoped and doped films in the temperature range from 450 to 600 K by compaering S- and W-parameters of SiGe with that of amorphous silicon and germanium. In conclusion, we discuss model of internim ordering states before crystallization.

Laser Processing in Silicon Molecular Beam Epitaxy

1981 ◽  
Vol 4 ◽  
Author(s):  
T. De Jong ◽  
L. Smit ◽  
V.V. Korablev ◽  
F.W. Saris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Laser Processing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Epitaxial Layers ◽  
Epitaxial Silicon ◽  
Temperature Deposition ◽  
Substrate Surfaces

ABSTRACTWe have grown epitaxial silicon films on silicon (100), (110) and (111) oriented substrates, using pulsed ruby laser irradiation as a means to obtain clean, ordered substrate surfaces. On these surfaces epitaxial layers were grown in two ways: I. Rȯom temperature deposition and pulsed laser induced epitaxy of 100–300 nm films was carried out repeatedly, yielding ∼1 μm thick epitaxial layers. II. Low temperature molecular beam epitaxy (M.B.E.), even at 250°C on Si(100),of layers up to 1 μm.Applying the second technique to implanted substrates, we annealed and cleaned arsenic implanted silicon (100) samples in situ, and produced epitaxial overlayers of 100–1000 nm, thus creating a buried n-type channel in silicon.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

Temperature Dependence of Optical Properties of AlAs, Studied by In Situ Spectroscopic Ellipsometry

1992 ◽  
Vol 242 ◽  
Author(s):  
Huade Yao ◽  
Paul G. Snyder ◽  
Kathleen Stair ◽  
Thomas Bird
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Optical Constants ◽  
Molecular Beam ◽  
Gaas Layer ◽  
Temperature Dependent ◽  
Harmonic Oscillator Approximation ◽  
Quantitative Analyses

ABSTRACTThe dielectric functions ε = ε1+iε2 of AlAs were determined from 1.5 eV to 5.0 eV, by spectroscopie ellipsometry (SE), from room temperature (RT) to ∼577 °C in an ultrahigh vacuum (UHV) chamber. Molecular beam epitaxy (MBE)-grown AlAs was covered by a thin GaAs layer, which was passivated by arsenic capping to prevent oxidation. The arsenic cap was desorbed inside the UHV chamber. SE measurements of the unoxidized sample were made, at various temperatures. Temperature dependent optical constants of AlAs were obtained by mathematically removing the effects of the GaAs cap and substrate. Quantitative analyses of the variations of critical-point energies with temperature, by using the harmonic oscillator approximation (HOA), indicate that the E1 and E1+Δ1 energies decrease -350 meV as temperature increases from RT to 500 °C.

In situ observation of gas-source molecular beam epitaxy of silicon and germanium on Si(001)

1998 ◽  
Vol 16 (3) ◽  
pp. 1938-1943 ◽  
Author(s):  
I. Goldfarb ◽  
J. H. G. Owen ◽  
D. R. Bowler ◽  
C. M. Goringe ◽  
P. T. Hayden ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Observation ◽  
Gas Source ◽  
Silicon And Germanium

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Room-temperature ferromagnetism in (Mn, N)-codoped TiO2 films grown by plasma assisted molecular beam epitaxy

2008 ◽  
Vol 104 (9) ◽  
pp. 093914 ◽  
Author(s):  
X. Y. Li ◽  
S. X. Wu ◽  
L. M. Xu ◽  
Y. J. Liu ◽  
X. J. Xing ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Tio2 Films ◽  
Codoped Tio2

In situ reflectance difference spectroscopy of N-plasma doped ZnTe grown by molecular beam epitaxy

1998 ◽  
Vol 73 (26) ◽  
pp. 3857-3859 ◽  
Author(s):  
D. Stifter ◽  
M. Schmid ◽  
K. Hingerl ◽  
A. Bonanni ◽  
M. Garcia-Rocha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Difference Spectroscopy ◽  
Reflectance Difference Spectroscopy

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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