Trapping of Oxygen at Homoepitaxial Si-Si Interfaces Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 59 ◽  
Author(s):  
R. Hull ◽  
M. E. Twigg ◽  
J. C. Bean ◽  
J. M. Gibson ◽  
D. C. Joy
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Defect Density ◽  
High Density ◽  
Buffer Layers ◽  
Si Substrates ◽  
Preparation Conditions ◽  
Primary Model ◽  
Post Deposition

ABSTRACTInterfaces between Si substrates and epitaxial Si buffer layers grown by Molecular Beam Epitaxy (MBE) are shown to contain a high density of SiOx pockets for certain sustrate preparation conditions. It is also shown that post-deposition thermal annealing of these structures grown upon Czochralski wafers can lead to a greatly increased defect density at the interface. The primary model proposed for this increase is trapping of background oxygen diffusing from the bulk of the Czochralski substrate wafers.

Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers

1997 ◽  
Vol 81 (4) ◽  
pp. 1708-1714 ◽  
Author(s):  
W. K. Liu ◽  
J. Winesett ◽  
Weiluan Ma ◽  
Xuemei Zhang ◽  
M. B. Santos ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Si Substrates

Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
B.J. Wu ◽  
K.L. Wang ◽  
Y.J. Mii ◽  
Y.S. Yoon ◽  
A.T. Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates

AbstractGaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

Growth and characterization of GaAs on Si substrates grown by molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 897-903
Author(s):  
P. Mandeville ◽  
A. J. SpringThorpe ◽  
C. J. Miner ◽  
R. A. Bruce ◽  
J. F. Currie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Parameters ◽  
Current Gain ◽  
Hall Resistance ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas

Single-crystal GaAs layers have been grown by molecular beam epitaxy (MBE) on (100) Si substrates. Surface morphology, defect density, and optical and electrical properties have been studied as a function of the growth parameters. The characterization techniques included photoluminescence, Hall effect, cross-sectional transmission electron microscopy, and X-ray diffraction. GaAs metal semiconductor field-effect transitors on Si exhibited transconductances of 128 mS∙mm−1 and current-gain cutoff frequencies as high as 19 GHz. Special heterostructures showed Shubnikov–de Haas oscillations at low temperature and plateaux in the Hall resistance, which confirmed the presence of two-dimensional electron gas in the heterostructure.

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

1994 ◽  
Vol 9 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
S.N. Basu ◽  
T. Lei ◽  
T.D. Moustakas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Electron Cyclotron ◽  
Si Substrates ◽  
Zinc Blende

The microstructures of GaN films, grown on (001) and (111) Si substrates by a two-step method using Electron Cyclotron Resonance assisted-Molecular Beam Epitaxy (ECR-MBE), were studied by electron microscopy techniques. Films grown on (001) Si had a predominantly zinc-blende structure. The GaN buffer layer, grown in the first deposition step, accommodated the 17% lattice mismatch between the film and substrate by a combination of misoriented domains and misfit dislocations. Beyond the buffer layer, the film consisted of highly oriented domains separated by inversion domain boundaries, with a substantial decrease in the defect density away from the interface. The majority of defects in the film were stacking faults, microtwins, and localized regions having the wurtzite structure. The structure of the GaN films grown on (111) Si was found to be primarily wurtzite, with a substantial fraction of twinned zinc-blende phase. Occasional wurtzite grains, misoriented by a 30°twist along the [0001] axis, were also observed. A substantial diffusion of Si was seen in films grown on both substrates.

Twinning in epilayers of CdTe on Si: Influence of ZnTe buffer layer and substrate misorientation

1995 ◽  
Vol 399 ◽  
Author(s):  
A. Gray ◽  
N.K. Dhar ◽  
W. Clark ◽  
P. Charlton ◽  
J.H. Dinan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

ABSTRACTX-ray diffraction spectra of CdTe epilayers grown with and without ZnTe buffer layers on <211> Si substrates by molecular beam epitaxy consist of 422 and 331 reflections. We interpret these as evidence for the existence of twins within the volume of a <211> oriented epilayer and show that twin volume is dependent on the ZnTe buffer layer and substrate misorientation.

Epitaxial Growth of AlN on Si Substrates with Intermediate 3C-SiC as Buffer Layers

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Q. Hong ◽  
H. M. Liaw ◽  
K. Linthicum ◽  
R. F. Davis ◽  
P. Fejes ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Region ◽  
Buffer Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Near Surface ◽  
Si Substrates ◽  
Gas Source ◽  
Sic Film

ABSTRACTSingle crystalline AlN was successfully grown on a 3C-SiC coated Si (111) substrate by organometallic vapor phase epitaxy. The 3C-SiC film was obtained via the conversion of the Si near-surface region to SiC using gas-source molecular beam epitaxy. The quality of the AlN was mainly controlled by that of the SiC. The effects of Si pits and SiC hillocks formed during the conversion on subsequent AlN growth are discussed. Process optimization is suggested to improve the SiC buffer layer for subsequent AlN deposition.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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