Growth and characterization of GaAs on Si substrates grown by molecular-beam epitaxy
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Single-crystal GaAs layers have been grown by molecular beam epitaxy (MBE) on (100) Si substrates. Surface morphology, defect density, and optical and electrical properties have been studied as a function of the growth parameters. The characterization techniques included photoluminescence, Hall effect, cross-sectional transmission electron microscopy, and X-ray diffraction. GaAs metal semiconductor field-effect transitors on Si exhibited transconductances of 128 mS∙mm−1 and current-gain cutoff frequencies as high as 19 GHz. Special heterostructures showed Shubnikov–de Haas oscillations at low temperature and plateaux in the Hall resistance, which confirmed the presence of two-dimensional electron gas in the heterostructure.
2009 ◽
Vol 79-82
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pp. 823-826
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1994 ◽
Vol 9
(9)
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pp. 2370-2378
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1999 ◽
Vol 14
(5)
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pp. 2036-2042
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