Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates
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1987 ◽
Vol 5
(3)
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pp. 822
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1990 ◽
Vol 8
(2)
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pp. 1013-1019
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2004 ◽
Vol 269
(2-4)
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pp. 181-186
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1999 ◽
Vol 14
(3)
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pp. 257-265
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