Structure and Morphology Characters of GaN Grown by ECR-MBE Using Hydrogen-Nitrogen Mixed Gas Plasma

GaN growth by electron-cyclotron-resonance plasma-excited molecular beam epitaxy using hydrogen-nitrogen mixed gas plasma were carried out on GaN templates with a different polar-surface. Structure and surface morphology of the GaN layers were characterized using transmission electron microscopy. The GaN layer grown with hydrogen on N-polar template showed a relatively flat morphology including hillocks. Columnar domain existed in the center of the hillock, which might be attributed to the existence of tiny inversion domain with Ga-polarity. On the other hand, columnarstructure was formed in the GaN layer grown with hydrogen on Ga-polar template.