scholarly journals Direct Analysis of Atomic Structures of Advanced Ceramics by High-Resolution Electron Microscopy.

2001 ◽  
Vol 109 (1266) ◽  
pp. S17-S24 ◽  
Author(s):  
Takeo OKU
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Direct Analysis ◽  
High Resolution Electron Microscopy ◽  
Advanced Ceramics ◽  
Atomic Structures ◽  
Resolution Electron

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

High Resolution Electron Microscopy (HREM) Study of Chemically Vapor Deposited Polycrystalline Si1-xGex Thin Films

2000 ◽  
Vol 609 ◽  
Author(s):  
W. Qin ◽  
D. G. Ast ◽  
T. I. Kamins
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Repeat Unit ◽  
High Resolution Electron Microscopy ◽  
Second Order ◽  
Plan View ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Polysilicon Films

ABSTRACTThe microstructure of polysilicon and Si0.69Ge0.31 thin films, grown by chemical-vapordeposition (CVD) on oxidized silicon wafers covered with a very thin polysilicon seed layer, was investigated using high-resolution electron microscopy (HREM). The plan-view HREM images showed that polysilicon films contained less substructure inside grains and had fewer multiple twins and more extended twin bands than Si0.69Ge0.31. On the other hand, only SiGe contained multiple twins with five-fold symmetry. The atomic model of the second-order symmetric twin boundary proposed for Si and based on the insertion of five-member and seven-membered rings was found to describe the atomic structures of second-order symmetric twin boundaries in Si0.69Ge0.31 as well. Within the accuracy of HREM, the repeat unit of the boundary was the same in Si0.69Ge0.31 and Si.

The observation of various grain boundary atomic structures in Au by high-resolution electron microscopy

1986 ◽  
Vol 1 (1) ◽  
pp. 47-59 ◽  
Author(s):  
William Krakow ◽  
David A. Smith
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Boundary Structure ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Grain Orientations ◽  
Tilt Boundaries ◽  
Au Thin Films ◽  
Special Case

A number of grain boudary structures prepared from evaporated Au thin films have been investigated using very high-resolution electron microscopy. Particular emphasis has been placed on analyzing [110] tilt boundaries with both low- and high-angle misorientations. Observations of the atomic positions at dislocation cores and close-packed polyhedral shapes at the interface have been made. Symmetric boundaries have been observed as well as interfacial regions where the grain orientations deviate from perfect coincidence and hence the boundary structure exhibits perturbations to the regular polyhedron stacking. The special case of “plane coalescence” has also been observed, as well as the boundary splitting near a hole. The fabrication and observation of a generalized boundary, which cannot be classified as a tilt structure, will also be demonstrated.

scholarly journals Comparisons Of Observed And Simulated Atomic Structures Of Pd/NiO Heterophase Interfaces

1992 ◽  
Vol 295 ◽  
Author(s):  
M. I. Buckett ◽  
J. P. Shaffer ◽  
Karl L. Merkle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Rigid Body ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Boundary Plane ◽  
Misfit Dislocations ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Image Simulations

AbstractHigh-resolution electron microscopy (HREM) and image simulations using the multislice algorithm have been used to study the atomic structure of a Pd/NiO (111) interface in an intemally oxidized sample. Samples prepared in this way result in cube-on-cube oriented or twin-related precipitates whose (111) interfaces exhibit a contrast modulation along the boundary plane in HREM images. Previous studies have reported that the observed structural period of this modulation corresponds qualitatively to the expected spacing if the boundary was composed of a network of misfit dislocations. In this study, rigid models of the (111) interface as viewed from the [110] direction were simulated using the EMS suite of programs. The questions we address are: (1) whether the terminating plane on the oxide side is made up of a Ni or an 0 layer, and (2) whether a rigid body translation normal to the interface exists. Finally, the results of the simulations are compared and contrasted to through-focal experimental images to investigate the origin of the contrast modulations and their possible relation to the extent of the misfit localization in these systems.

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