Understanding and Modeling Ramp Rate Effects on Shallow Junction Formation

2000 ◽  
Vol 610 ◽  
Author(s):  
Srinvasan Chakravarthi ◽  
Alp H. Gencer ◽  
Scott T. Dunham ◽  
Daniel F. Downey
Keyword(s):  
Sheet Resistance ◽  
Junction Depth ◽  
Ramp Rate ◽  
Trade Offs ◽  
Rate Effects ◽  
Junction Formation ◽  
Research Corporation ◽  
Semiconductor Research Corporation ◽  
The University ◽  
Active Dose

SummaryIn summary, we find it is possible to model the extent of diffusion during spike anneals with varying ramp rates by considering the full thermal cycle. These models allow the optimization of RTP ammealing cycles considering the trade-offs between junction depth and sheet resistance. For example, with 1050°C spike anneals, the active dose (and thus sheet conductivity) varies approximately linearly with junction depth. However, faster ramp rates allow the use of higher spike temperatures, with associated higher activation and reduced sheet resistance for the same junction depth.Work at Bosten University and the University of Washington was supported by the Semiconductor Research Corporation. We would like to thank Eric Perozziello for details and discussion regarding their experimental results.

Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping

2008 ◽  
Vol 1070 ◽  
Author(s):  
Seung-woo Do ◽  
Byung-Ho Song ◽  
Ho Jung ◽  
Seong-Ho Kong ◽  
Jae-Geun Oh ◽  
...  
Keyword(s):  
Free Surface ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Room Temperature ◽  
Doping Concentration ◽  
Junction Depth ◽  
Surface Doping ◽  
Plasma Doping ◽  
Junction Formation ◽  
Doping Profiles

ABSTRACTPlasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

scholarly journals An overview of thriving through transformation

2017 ◽  
Author(s):  
Boyd Dirk Blackwell
Keyword(s):  
New England ◽  
New South ◽  
Human Existence ◽  
Special Issue ◽  
Competing Interests ◽  
Biennial Conference ◽  
South Wales ◽  
Trade Offs ◽  
Multiple Dimensions ◽  
The University

The articles published in this special issue come from the blind peer review and refinement of papers presented to the biennial conference of the Australia New Zealand Society for Ecological Economics (ANZSEE) held at the University of New England (UNE) in Armidale, New South Wales (NSW), Australia on 19-23 October 2015. All papers jointly contribute to helping transform the human existence toward one that is socially, culturally, environmentally, ecologically, economically and politically sustainable. Transforming our human existence to meet these multiple dimensions of ‘true’ sustainability is a difficult task, balancing potentially competing interests and, inevitably, involving trade-offs between these dimensions.

Influence of amorphization depth on sheet resistance in shallow junction formation with B cluster implantation

2009 ◽  
Author(s):  
Yoji Kawasaki ◽  
Yoshiki Maruyama ◽  
Hidefumi Yoshimura ◽  
Hiroshi Miyatake ◽  
Kentaro Shibahara
Keyword(s):  
Sheet Resistance ◽  
Shallow Junction ◽  
Junction Formation

scholarly journals Eco-Efficient Resource Management in HPC Clusters through Computer Intelligence Techniques

Energies ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 2129 ◽  
Author(s):  
Alberto Cocaña-Fernández ◽  
Emilio San José Guiote ◽  
Luciano Sánchez ◽  
José Ranilla
Keyword(s):  
Environmental Impact ◽  
High Performance ◽  
Service Providers ◽  
It Service ◽  
Genetic Fuzzy System ◽  
Trade Offs ◽  
Efficient Resource ◽  
The University ◽  
Performance Computing

High Performance Computing Clusters (HPCCs) are common platforms for solving both up-to-date challenges and high-dimensional problems faced by IT service providers. Nonetheless, the use of HPCCs carries a substantial and growing economic and environmental impact, owing to the large amount of energy they need to operate. In this paper, a two-stage holistic optimisation mechanism is proposed to manage HPCCs in an eco-efficiently manner. The first stage logically optimises the resources of the HPCC through reactive and proactive strategies, while the second stage optimises hardware allocation by leveraging a genetic fuzzy system tailored to the underlying equipment. The model finds optimal trade-offs among quality of service, direct/indirect operating costs, and environmental impact, through multiobjective evolutionary algorithms meeting the preferences of the administrator. Experimentation was done using both actual workloads from the Scientific Modelling Cluster of the University of Oviedo and synthetically-generated workloads, showing statistical evidence supporting the adoption of the new mechanism.

Electron beam Annealing of Shallow BF2 Implantations

1983 ◽  
Vol 23 ◽  
Author(s):  
C. Jaussaud ◽  
A.M. Cartier ◽  
J. Escaron
Keyword(s):  
Electron Beam ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Junction Depth ◽  
Spreading Resistance ◽  
Annealing Temperatures ◽  
Minimum Value ◽  
Beam System ◽  
Multiple Scan ◽  
Resistance Value

ABSTRACTA multiple scan electron beam system has been used to anneal silicon implanted with BF2 (25 Kev, 1, 2 and 5 × 1015 ions × cm−2 ). The annealing temperatures range from 1000 to 1200° C and the annealing times from 3 to 18 seconds. The curves of sheet resistance as a function of annealing time show a minimum. The increase in sheet resistance at longer annealing times is due to boron outdiffusion. Junction depths have been measured by spreading resistance and are presented. For implanted doses below 2 × 1015 ions × cm−2 boron outdiffusion limits the sheet resistance value at about 100 R Ωand this minimum value corresponds to an increase in junction depths of about 500 Å. For implanted doses of 5 × 1015 ions ×cm−2, 60 Ω sheet resistance can be obtained, but with about 1000 Å increase in junction depth.

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