Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping

2008 ◽  
Vol 1070 ◽  
Author(s):  
Seung-woo Do ◽  
Byung-Ho Song ◽  
Ho Jung ◽  
Seong-Ho Kong ◽  
Jae-Geun Oh ◽  
...  
Keyword(s):  
Free Surface ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Room Temperature ◽  
Doping Concentration ◽  
Junction Depth ◽  
Surface Doping ◽  
Plasma Doping ◽  
Junction Formation ◽  
Doping Profiles

ABSTRACTPlasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.

Vacancy Enhanced Boron Activation during Room Temperature Implantation and Low Temperature Annealing

2000 ◽  
Vol 610 ◽  
Author(s):  
Jian-Yue Jina ◽  
Irene Rusakova ◽  
Qinmian Li ◽  
Jiarui Liu ◽  
Wei-Kan Chu
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Activation Barrier ◽  
Promising Method ◽  
Activation Mechanism ◽  
Rich Region ◽  
Shallow Junction ◽  
Low Temperature Annealing ◽  
Junction Formation

AbstractLow temperature annealing combined with pre-damage (or preamorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 /sq. using 20 keV 4×1014 Ω/cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550 °C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancyrich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

Ultra - Shallow p+/n Junction Formed by Plasma Ion Implantation

2000 ◽  
Vol 610 ◽  
Author(s):  
Sungkweon Baek ◽  
Chel-Jong Choi ◽  
Tae-Yeon Seong ◽  
Hyunsang Hwang ◽  
H. K. Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sheet Resistance ◽  
Deep Level ◽  
Junction Depth ◽  
Cross Sectional ◽  
Ultralow Energy ◽  
Ultrashallow Junctions ◽  
Plasma Doping ◽  
Order Of Magnitude ◽  
Transient Spectroscopy

AbstractWe have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900 °C and 950 °C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950 °C for 10s.

Understanding and Modeling Ramp Rate Effects on Shallow Junction Formation

2000 ◽  
Vol 610 ◽  
Author(s):  
Srinvasan Chakravarthi ◽  
Alp H. Gencer ◽  
Scott T. Dunham ◽  
Daniel F. Downey
Keyword(s):  
Sheet Resistance ◽  
Junction Depth ◽  
Ramp Rate ◽  
Trade Offs ◽  
Rate Effects ◽  
Junction Formation ◽  
Research Corporation ◽  
Semiconductor Research Corporation ◽  
The University ◽  
Active Dose

SummaryIn summary, we find it is possible to model the extent of diffusion during spike anneals with varying ramp rates by considering the full thermal cycle. These models allow the optimization of RTP ammealing cycles considering the trade-offs between junction depth and sheet resistance. For example, with 1050°C spike anneals, the active dose (and thus sheet conductivity) varies approximately linearly with junction depth. However, faster ramp rates allow the use of higher spike temperatures, with associated higher activation and reduced sheet resistance for the same junction depth.Work at Bosten University and the University of Washington was supported by the Semiconductor Research Corporation. We would like to thank Eric Perozziello for details and discussion regarding their experimental results.

Research on Characteristics of the Photovoltaic Cells Integrated on Chip

2014 ◽  
Vol 525 ◽  
pp. 287-291
Author(s):  
Li Xian Xiao ◽  
Yong Tai He ◽  
Yue Hong Peng ◽  
Jin Hao Liu
Keyword(s):  
Conversion Efficiency ◽  
Doping Concentration ◽  
Photovoltaic Cells ◽  
Influence Factors ◽  
Device Layer ◽  
Fabrication Technology ◽  
Junction Depth ◽  
On Chip ◽  
Substrate Doping ◽  
Emitter Junction

The influence factors of Photovoltaic (PV) cells characteristics integrated on chip were analyzed based on the fabrication process and the structure of the PV cells and CMOS devices. The results show the substrate doping concentration, the emitter doping concentration, the emitter junction depth and the thickness of device layer directly determine the conversion efficiency, open voltage and the light-generated current of photovoltaic cells. In the emitter doping concentration range of 1×1019/cm3 to 1×1021/cm3 and the substrate doping concentration range of 1.0×1015/cm3 to 1.0×1017/cm3, the Photovoltaic cells have batter conversion characteristics. The PV cells were designed based on the analysis results in PC1D, and the conversion efficiency is 9.43%. The Photovoltaic cells and the CMOS devices have batter fabrication technology compatibility integrated on chip.

Defect Structure of MEV Si Implantation in GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
S.-Tong Lee ◽  
G. Braunstein ◽  
Samuel Chen
Keyword(s):  
Free Surface ◽  
Defect Structure ◽  
Room Temperature ◽  
Surface Region ◽  
Peak Position ◽  
Lattice Disorder ◽  
Depth Profiles ◽  
Trim Calculation ◽  
Good Agreement

ABSTRACTThe defect and atomic profiles for MeV implantation of Si in GaAs were investigated using He++ channeling, TEM, and SIMS. Doses of 1–10 × 1015Si/cm2 at 1–3 MeV were used. MeV implantation at room temperature rendered only a small amount of lattice disorder in GaAs. Upon annealing at 400°C for 1 h or 800°C for 30 a, we observed a ‘defect-free’ surface region (- 1 μ for 3 MeV implant). Below this region, extensive secondary defects were formed in a band which was 0.7 μ wide and centered at 2 μ for 3 MeV implant. These defects were mostly dislocations lying in the [111] plane. SIMS depth profiles of Si implants showed the Si peak to be very close to the peak position of the defects. The experimental profiles of Si were compared to the TRIM calculation; generally good agreement existed among the peak positions.

scholarly journals Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Yi-Dong Luo ◽  
Yuan-Hua Lin ◽  
Xuehui Zhang ◽  
Deping Liu ◽  
Yang Shen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Doping Concentration ◽  
Double Exchange ◽  
Host Lattice ◽  
Charge Carriers ◽  
Fe Doping ◽  
Free Charge ◽  
Ferromagnetic Properties ◽  
Electrospinning Method ◽  
Fe Ions

Ni1−xFexOnanofibers with different Fe doping concentration have been synthesized by electrospinning method. An analysis of the phase composition and microstructure shows that Fe doping has no influence on the crystal structure and morphology of NiO nanofibers, which reveals that the doped Fe ions have been incorporated into the NiO host lattice. Pure NiO without Fe doping is antiferromagnetic, yet all the Fe-doped NiO nanofiber samples show obvious room-temperature ferromagnetic properties. The saturation magnetization of the nanofibers can be enhanced with increasing Fe doping concentration, which can be ascribed to the double exchange mechanism through the doped Fe ions and free charge carriers. In addition, it was found that the diameter of nanofibers has significant impact on the ferromagnetic properties, which was discussed in detail.

Interaction of Copper Film with Silicides

1990 ◽  
Vol 181 ◽  
Author(s):  
Yow-Tzong Shy ◽  
Shyam P. Murarka ◽  
Carlton L. Shepard ◽  
William A. Lanford
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Room Temperature ◽  
Copper Film ◽  
Furnace Annealing ◽  
Rutherford Back Scattering ◽  
Annealing Temperatures ◽  
Back Scattering ◽  
The Stability ◽  
Stable Structures

ABSTRACTBilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Chung Chan
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Impurity Profile ◽  
Device Structure ◽  
Hydrogen Etching ◽  
Shallow Junction ◽  
Dopant Profile ◽  
Plasma Doping ◽  
Junction Formation ◽  
Hydrogen Radicals

AbstractHydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO2, Al, and photoresist films have been investigated. The effects of varying different PII process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

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