Vacancy Enhanced Boron Activation during Room Temperature Implantation and Low Temperature Annealing

2000 ◽  
Vol 610 ◽  
Author(s):  
Jian-Yue Jina ◽  
Irene Rusakova ◽  
Qinmian Li ◽  
Jiarui Liu ◽  
Wei-Kan Chu
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Activation Barrier ◽  
Promising Method ◽  
Activation Mechanism ◽  
Rich Region ◽  
Shallow Junction ◽  
Low Temperature Annealing ◽  
Junction Formation

AbstractLow temperature annealing combined with pre-damage (or preamorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 /sq. using 20 keV 4×1014 Ω/cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550 °C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancyrich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

Low temperature annealing of nanocrystalline Si paste for pn junction formation

2021 ◽  
Vol 135 ◽  
pp. 106093
Author(s):  
Yusuke Kuboki ◽  
Huan Zhu ◽  
Morihiro Sakamoto ◽  
Hiroshige Matsumoto ◽  
Kungen Teii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Nanocrystalline Si

Influence of amorphization depth on sheet resistance in shallow junction formation with B cluster implantation

2009 ◽  
Author(s):  
Yoji Kawasaki ◽  
Yoshiki Maruyama ◽  
Hidefumi Yoshimura ◽  
Hiroshi Miyatake ◽  
Kentaro Shibahara
Keyword(s):  
Sheet Resistance ◽  
Shallow Junction ◽  
Junction Formation

Low temperature shallow junction formation using vacuum ultraviolet photons during rapid thermal processing

1997 ◽  
Vol 70 (13) ◽  
pp. 1700-1702 ◽  
Author(s):  
R. Singh ◽  
K. C. Cherukuri ◽  
L. Vedula ◽  
A. Rohatgi ◽  
S. Narayanan
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Vacuum Ultraviolet ◽  
Rapid Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Ultraviolet Photons

Influence of Al-Cu-Mn-Fe-Ti Alloy Composition and Production Parameters of Extruded Semi-Finished Products on their Structure and Mechanical Properties

2017 ◽  
Vol 265 ◽  
pp. 456-462 ◽  
Author(s):  
P.L. Reznik ◽  
Mikhail Lobanov
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Thermal Treatment ◽  
Low Temperature ◽  
Room Temperature ◽  
High Temperature Strength ◽  
Ti Alloy ◽  
Low Temperature Annealing ◽  
Annealing Conditions ◽  
Concentration Changes

Studies have been conducted as to the effect of Cu, Mn, Fe concentration changes in Al-Cu-Mn-Fe-Ti alloy, the conditions of thermal and deformational treatment of ingots and extruded rods 40 mm in diameter on the microstructure, phase composition and mechanical properties. It has been determined that changing Al-6.3Cu-0.3Mn-0.17Fe-0.15Ti alloy to Al-6.5Cu-0.7Mn-0.11Fe-0.15Ti causes an increase in the strength characteristics of extruded rods at the room temperature both after molding and in tempered and aged conditions, irrespective of the conditions of thermal treatment of the initial ingot (low-temperature annealing 420 °С for 2 h, or high-temperature annealing at 530 °С for 12 h). Increasing the extruding temperature from 330 to 480 °С, along with increasing Cu, Mn and decreasing Fe in the alloy Al-Cu-Mn-Ti, is accompanied by the increased level of ultimate strength in a quenched condition by 25% to 410 MPa, irrespective of the annealing conditions of the original ingot. An opportunity to apply the Al-6.3Cu-0.3Mn-0.17Fe-0.15Ti alloy with low-temperature annealing at 420 °С for 2 h and the molding temperature of 330 °С has been found to produce rods where, in the condition of full thermal treatment (tempering at 535 °С + aging at 200 °С for 8 hours), a structure is formed that ensures satisfactory characteristics of high temperature strength by resisting to fracture for more than 100 hours at 300 °С and 70 MPa.

Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films During Low Temperature Annealing

1995 ◽  
Vol 403 ◽  
Author(s):  
H. Tokioka ◽  
Y. Masutani ◽  
Y. Goto ◽  
S. Nagao ◽  
H. Kurokawa
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Layer Thickness ◽  
Sheet Resistance ◽  
Lower Layer ◽  
Low Temperature Annealing ◽  
Two Layer Model ◽  
Temperature Activation ◽  
Resistance Decrease ◽  
Ellipsometry Data

AbstractDuring low temperature (below 450°C) annealing, the sheet resistance of phosphorus implanted poly-Si thin films (film thickness : 50nm) decreased to lE+3Ω/square. The sheet resistance after annealing decreased with annealing time and became lower when the dosing level was high enough. At the dose of 8E+14 ions/cm2 we obtained a sheet resistance of 1E+3Q/square by annealing at 450°C for 180min. We analyzed ellipsometry data assuming a two-layer model where the surface layer consists of a-Si and the lower layer of poly-Si. This analysis indicated that the surface of implanted films was amorphized by ion implantation and the amorphized layer thickness increased with dosing level. Also, it turned out that the lower poly-Si layer thickness increased from 30nm to 50nm after annealing accompanied by the conversion of a-Si layer to poly-Si layer. During annealing at low temperature, activation of phosphorus ions implanted into poly-Si and recrystallization of a-Si took place simultaneously and the sheet resistance after annealing decreased with the increase in thickness of the recrystallized region.

Study on the Effect of RTA Ambient to Shallow N+/P Junction Formation using PH3 Plasma Doping

2008 ◽  
Vol 1070 ◽  
Author(s):  
Seung-woo Do ◽  
Byung-Ho Song ◽  
Ho Jung ◽  
Seong-Ho Kong ◽  
Jae-Geun Oh ◽  
...  
Keyword(s):  
Free Surface ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Room Temperature ◽  
Doping Concentration ◽  
Junction Depth ◽  
Surface Doping ◽  
Plasma Doping ◽  
Junction Formation ◽  
Doping Profiles

ABSTRACTPlasma doping (PLAD) process utilizing PH3 plasma to fabricate n-type junction with supplied bias of −1 kV and doping time of 60 sec under the room temperature is presented. The RTA process is performed at 900 °C for 10 sec. A defect-free surface is corroborated by TEM and DXRD analyses, and examined SIMS profiles reveal that shallow n+ junctions are formed with surface doping concentration of 1021atoms/cm3. The junction depth increases in proportion to the O2 gas flow when the N2 flow is fixed during the RTA process, resulting in a decreased sheet resistance. Measured doping profiles and the sheet resistance confirm that the n+ junction depth less than 52 nm and minimum sheet resistance of 313 Ω/□ are feasible.

Production of Small, Stable PbS/CdS Quantum Dots via Room Temperature Cation Exchange Followed by a Low Temperature Annealing Processes

2017 ◽  
Vol 121 (45) ◽  
pp. 25520-25530 ◽  
Author(s):  
Emek G. Durmusoglu ◽  
Melike M. Yildizhan ◽  
Mehmet A. Gulgun ◽  
Havva Yagci Acar
Keyword(s):  
Quantum Dots ◽  
Low Temperature ◽  
Cation Exchange ◽  
Room Temperature ◽  
Cds Quantum Dots ◽  
Low Temperature Annealing
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