Low temperature annealing of nanocrystalline Si paste for pn junction formation

2021 ◽  
Vol 135 ◽  
pp. 106093
Author(s):  
Yusuke Kuboki ◽  
Huan Zhu ◽  
Morihiro Sakamoto ◽  
Hiroshige Matsumoto ◽  
Kungen Teii ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Nanocrystalline Si

Vacancy Enhanced Boron Activation during Room Temperature Implantation and Low Temperature Annealing

2000 ◽  
Vol 610 ◽  
Author(s):  
Jian-Yue Jina ◽  
Irene Rusakova ◽  
Qinmian Li ◽  
Jiarui Liu ◽  
Wei-Kan Chu
Keyword(s):  
Low Temperature ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Activation Barrier ◽  
Promising Method ◽  
Activation Mechanism ◽  
Rich Region ◽  
Shallow Junction ◽  
Low Temperature Annealing ◽  
Junction Formation

AbstractLow temperature annealing combined with pre-damage (or preamorphization) implantation is a very promising method to overcome the activation barrier in ultra-shallow junction formation. We have made a 32 nm p+/n junction with sheet resistance of 290 /sq. using 20 keV 4×1014 Ω/cm2 Si followed by 2 keV 1×1015 at./cm2 B implantation and 10 minutes 550 °C annealing. This paper studies the boron activation mechanism during low temperature annealing. The result shows that placing B profile in the vacancyrich region has much better boron activation than placing B profile in interstitial-rich region or without pre-damage. It also shows that a significant portion of boron is in substitutional positions before annealing. The amount of substitutional boron is correlated to the amount of vacancies (damage) by the pre-damage Si implantation. The result supports our speculation that vacancy enhances boron activation.

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

Low-temperature annealing of arsenic/phosphorus junctions

1991 ◽  
Vol 38 (2) ◽  
pp. 278-284 ◽  
Author(s):  
M.E. Law ◽  
J.R. Pfiester
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing

scholarly journals Effects of equal channel angular pressing and heat treatments on the microstructures and mechanical properties of selective laser melted and cast AlSi10Mg alloys

2021 ◽  
Vol 21 (3) ◽  
Author(s):  
Przemysław Snopiński ◽  
Mariusz Król ◽  
Marek Pagáč ◽  
Jana Petrů ◽  
Jiří Hajnyš ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Equal Channel Angular Pressing ◽  
Heat Treatments ◽  
Electron Backscattered Diffraction ◽  
Angular Pressing ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Before And After ◽  
The Impact

AbstractThis study investigated the impact of the equal channel angular pressing (ECAP) combined with heat treatments on the microstructure and mechanical properties of AlSi10Mg alloys fabricated via selective laser melting (SLM) and gravity casting. Special attention was directed towards determining the effect of post-fabrication heat treatments on the microstructural evolution of AlSi10Mg alloy fabricated using two different routes. Three initial alloy conditions were considered prior to ECAP deformation: (1) as-cast in solution treated (T4) condition, (2) SLM in T4 condition, (3) SLM subjected to low-temperature annealing. Light microscopy, transmission electron microscopy, X-ray diffraction line broadening analysis, and electron backscattered diffraction analysis were used to characterize the microstructures before and after ECAP. The results indicated that SLM followed by low-temperature annealing led to superior mechanical properties, relative to the two other conditions. Microscopic analyses revealed that the partial-cellular structure contributed to strong work hardening. This behavior enhanced the material’s strength because of the enhanced accumulation of geometrically necessary dislocations during ECAP deformation.

Improving the Performance of Green LEDs by Low-Temperature Annealing of p-GaN with PdZn

2009 ◽  
Vol 12 (5) ◽  
pp. H185 ◽  
Author(s):  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Seong-Ju Park ◽  
Sunwoon Kim ◽  
Je Won Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Green Leds

Low-temperature annealing of heavily ion-implanted layer

1990 ◽  
Vol 73 (6) ◽  
pp. 86-91
Author(s):  
Tadahiro Ohmi ◽  
Yoshio Ishihara ◽  
Tadashi Shibata ◽  
Akira Okita
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Ion Implanted
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