Structural, Mechanical and Tribological Properties of TiN and CrN Films Deposited by Reactive Pulsed Laser Deposition

2004 ◽  
Vol 843 ◽  
Author(s):  
A. R. Phani ◽  
J. E. Krzanowski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mechanical And Tribological Properties ◽  
Potential Applications

ABSTRACTNitride thin films have potential applications in different areas of silicon device technology, namely as diffusion barrier in metallization schemes, rectifying and ohmic contacts, and gate electrodes in field effect transistors. In the present investigation, TiN and CrN films have been deposited by reactive pulsed laser deposition technique using Ti and Cr targets at 10mTorr background pressure of N2. Si (100) and AISI 440C steel substrates were used for the present study. Films were deposited at different temperatures in the range of 200°C to 600°C. The deposited films exhibited densely packed grain, with smooth and uniform structures. X-ray Photoelectron Spectroscopy (XPS) analysis of the films showed and 50% Ti and 40% of N in TiN films, 45% of Cr and 45% of N in CrN films deposited on Si (111), with the balance mostly oxygen, indicating near stoichiometric composition of the deposited nitride thin films. Hardness of the films changed from 22 GPa at 200°C to 30 GPa at 600°C for TiN, whereas for CrN we obtained 26 GPa at 200°C to 31 GPa at 600°C. The residual stress in the films showed a change from compressive stress at 200°C to tensile stress at 600°C in both the cases. Friction coefficient of the films were measured by pin-on-disk technique for all films, up to the tested limit of 10, 000 cycles at 1 N load and found to be very high (≥ 1) in both cases.

Preparation of Silicon Carbide Nano-Particles Using a Pulsed Laser Deposition Method

2004 ◽  
Vol 818 ◽  
Author(s):  
H. Kawasaki ◽  
Y. Suda ◽  
T. Ohshima ◽  
T. Ueda ◽  
S. Nakashima
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Nd:Yag Laser ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Nano Particles ◽  
Laser Deposition ◽  
Laser Beams ◽  
Silicon Carbon

AbstractWe have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

Pulsed laser deposition and characterization of conductive RuO2 thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1433-1436 ◽  
Author(s):  
A. Iembo ◽  
F. Fuso ◽  
E. Arimondo ◽  
C. Ciofi ◽  
G. Pennelli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Characteristics ◽  
Laser Deposition ◽  
X Ray ◽  
Substrate Interface

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

Novel Nanocrystalline Materials by Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
J. Narayan ◽  
A.K. Sharma ◽  
A. Kvit ◽  
D. Kumar ◽  
J.F. Muth
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Grain Boundary Sliding ◽  
Laser Deposition ◽  
Nanocrystalline Metal ◽  
Potential Applications ◽  
Novel Method ◽  
Boundary Sliding

AbstractWe have developed a novel method based upon pulsed laser deposition to produce nanocrystalline metal, semiconductor and magnetic material thin films and composites. The size of nanocrystals was controlled by interfacial energy, number of monolayers and substrate temperature. By incorporating a few monolayers of W during PLD, the grain size of copper nanocrystals was reduced from 160nm (Cu on Si (100)) to 4nm for a multilayer (Cu/W/Cu/W/Si (100)) thin film. The hardness increased with decreasing grain size up to a certain value (7nm in the case of copper) and then decreased below this value. While the former is consistent with Hall-Petch model, the latter involves a new model based upon grain boundary sliding.We have used the same PLD approach to form nanocrystalline metal (Ni, Co, Fe embedded in α-A12O3 and MgO) and semiconductor (Si, Ge, ZnO, GaN embedded in AIN and α-A12O3) thin films. These nanocrystalline composites exhibit novel magnetic properties and novel optoelectronic properties with quantum confinement of electrons, holes and excitons in semiconductors. We review advanced PLD processing, detailed characterization, structureproperty correlations and potential applications of these materials.

Thermoelectric properties of Bi2Te3 based thin films fabricated by pulsed laser deposition

2007 ◽  
Vol 1044 ◽  
Author(s):  
Shun Higomo ◽  
Takashi Yagi ◽  
Haruhiko Obara ◽  
Atsushi Yamamoto ◽  
Kazuo Ueno ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Physical Vapor Deposition ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Measuring System ◽  
Vapor Pressures ◽  
Film Composition

AbstractBi2Te3-based thin films were fabricated on glass substrates by the pulsed laser deposition (PLD) method. The vapor pressures of Bi and Te are significantly different, so controlling the stoichiometric composition is difficult when using conventional physical vapor deposition techniques, and the thermoelectric properties of Bi2Te3 films are sensitive to the film composition. PLD is a promising technique for the fabrication of telluride-based films such as Bi2Te3 due to its superior capability for controlling the film composition. Another advantage of PLD is the flexibility that it allows in terms of atmosphere in the reaction chamber; high concentrations of gases such as oxygen or argon can be introduced. We have measured various compositions of Bi2Te3 based films, and have identified the optimal compositions for both n-type and p-type material. The thermal conductivities of these Bi2Te3 films were evaluated by an exact measuring system, and the results were twice as low as those of conventional bulk materials. These results suggest that PLD has significant advantages for the deposition of in-plane Bi2Te3-based thin films.

Pulsed-Laser Deposition of TiNi Shape Memory Alloy Thin Films

2001 ◽  
Vol 672 ◽  
Author(s):  
X.Y. Chen ◽  
Y.F. Lu ◽  
Z.M. Ren ◽  
L. Zhang ◽  
J.P. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Shape Memory Alloy ◽  
Shape Memory ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Deposited Films

ABSTRACTThin films of TiNi shape memory alloy (SMA) have been prepared by pulsed-laser deposition (PLD) at different substrate temperatures. The stoichiometry, crystallinity, and morphology of the deposited films were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and atom force microscopy (AFM). The transformation behavior and crystallization temperatures were investigated by differential scanning calorimetry (DSC). It is found that the Ni content of the deposited films ranges from 46.7 to 52.0 at.%. The crystallization temperature of the amorphous films is around 460°C. The activation energy of the crystallization process is determined by Kissinger's method to be 301 kJ/mol. The martensitic transformation temperature of the annealed Ti-51.5 at.% Ni film is –20.8°C.

Reactive Pulsed Laser Deposition of Microcrystalline Ge-based Thin Films

2003 ◽  
Vol 762 ◽  
Author(s):  
Matthew R. Wills ◽  
Ruth Shinar ◽  
Alan P. Constant
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
X Ray ◽  
Starting Point ◽  
Crystalline Films

AbstractPulsed laser deposition (PLD) was used to grow microcrystalline thin films of germanium (Ge) and Ge-carbon (Ge,C) alloys on fused quartz and silicon substrates at substrate temperatures 25°C ≤ Ts ≤ 325°C. The films were analyzed structurally with x-ray diffraction (XRD), optically, electrically with four-point probe measurements, and chemically with x-ray photoelectron spectroscopy (XPS). XRD results displayed a varying degree of crystallinity, with the most crystalline films obtained at Ts > 150°C. The resistivity of the Ge films decreased with increasing temperature, displaying a significant decrease for the films deposited at Ts ≥ 230°C. The growth conditions for Ge films served as a starting point for low-temperature deposition of Ge,C alloys with up to 5% C. The effects of Ts and carbon concentration on film properties are discussed.

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