Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

AbstractCapacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemical vapor deposition. The electron charging was decreased as the dot size was decreased. These results showed that the conduction band shift is larger than the valence band shift as the dot size decreased and, as a result, electrons are easily discharged in a-Si QDs due to the lower barrier height. For high dot-density-sample, the capacitance-voltage curves were also shifted toward the negative voltage direction when a higher forward bias was applied at forward condition due to the transfer of electrons trapped in the a-Sci QDs from the a-Sci QDs near Si substrate to those near the top metal.

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Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.323.48 ◽

2021 ◽

Vol 323 ◽

pp. 48-55

Author(s):

Jia Xin Sun ◽

Bing Qing Zhou ◽

Xin Gu

Keyword(s):

Thin Films ◽

Quantum Dots ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Raman Spectra ◽

Annealing Temperature ◽

Chemical Vapor ◽

Blue Shift ◽

Silicon Quantum Dots ◽

Plasma Chemical Vapor Deposition

Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

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Determination of the size dispersion of amorphous silicon quantum dots from a silicon nitride film containing silicon nanocrystals

Optik ◽

10.1016/j.ijleo.2019.163763 ◽

2020 ◽

Vol 207 ◽

pp. 163763

Author(s):

Nadjet Hafsi ◽

Hachemi Bouridah ◽

Hakim Haoues

Keyword(s):

Quantum Dots ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Silicon Nanocrystals ◽

Nitride Film ◽

Silicon Nitride Film ◽

Silicon Quantum Dots ◽

Size Dispersion

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Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

Physical Review Letters ◽

10.1103/physrevlett.86.1355 ◽

2001 ◽

Vol 86 (7) ◽

pp. 1355-1357 ◽

Cited By ~ 448

Author(s):

Nae-Man Park ◽

Chel-Jong Choi ◽

Tae-Yeon Seong ◽

Seong-Ju Park

Keyword(s):

Quantum Dots ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Quantum Confinement ◽

Silicon Quantum Dots

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Full Color Luminescence from Amorphous Silicon Quantum Dots Embedded in Silion Nitride

MRS Proceedings ◽

10.1557/proc-638-f13.6.1 ◽

2000 ◽

Vol 638 ◽

Cited By ~ 1

Author(s):

Nae-Man Park ◽

Tae-Soo Kim ◽

Chel-Jong Choi ◽

Tae-Yeon Seong ◽

Seong-Ju Park

Keyword(s):

Quantum Dots ◽

Amorphous Silicon ◽

Quantum Confinement Effect ◽

Chemical Vapor ◽

Nitride Film ◽

Silicon Nitride Film ◽

Silicon Quantum Dots ◽

Light Emitting ◽

Full Color ◽

Mean Size

AbstractAmorphous silicon quantum dots (a-Si QDs), which show a quantum confinement effect, were grown in a silion nitride film by plasma enhanced chemical vapor deposition. Red, green, blue, and white photolumiscence were observed from the a-Si QD strictures by controlling the fot size. An organe light-emitting device (LED) was fabricated using a-Si QDs with a mean size of 2.0 nm. The turn-on vottage was less than 5 V. An external quantum effiency of 2×10−3 % was also demonstrated. These results show that an LED using a-Si QDs embedded in the silicon nitride film is superior in terms of electrical and optical properties to other Si-based LEDs.

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Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride

Applied Physics Letters ◽

10.1063/1.1596371 ◽

2003 ◽

Vol 83 (5) ◽

pp. 1014-1016 ◽

Cited By ~ 31

Author(s):

Nae-Man Park ◽

Sang-Hun Jeon ◽

Hyun-Deok Yang ◽

Hyunsang Hwang ◽

Seong-Ju Park ◽

...

Keyword(s):

Quantum Dots ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Charge Storage ◽

Silicon Quantum Dots ◽

Size Dependent

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Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films

Applied Physics Letters ◽

10.1063/1.2902296 ◽

2008 ◽

Vol 92 (12) ◽

pp. 121922 ◽

Cited By ~ 28

Author(s):

H. L. Hao ◽

L. K. Wu ◽

W. Z. Shen

Keyword(s):

Quantum Dots ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Quantum Dots ◽

Amorphous Silicon Nitride ◽

Silicon Nitride Films ◽

Red Luminescence ◽

Hydrogenated Amorphous

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Electron charging and discharging in amorphous silicon quantum dots embedded in silicon nitride

Applied Physics Letters ◽

10.1063/1.1497444 ◽

2002 ◽

Vol 81 (6) ◽

pp. 1092-1094 ◽

Cited By ~ 28

Author(s):

Nae-Man Park ◽

Suk-Ho Choi ◽

Seong-Ju Park

Keyword(s):

Quantum Dots ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Silicon Quantum Dots

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A ultra-thin silicon nitride barrier layer implementation for silicon quantum dots in amorphous silicon carbide matrix in photovoltaic application

Energy Procedia ◽

10.1016/j.egypro.2011.10.190 ◽

2011 ◽

Vol 10 ◽

pp. 271-281

Author(s):

Zhenyu Wan ◽

Shujuan Huang ◽

Martin Green ◽

Gavin Conibeer

Keyword(s):

Quantum Dots ◽

Silicon Carbide ◽

Silicon Nitride ◽

Amorphous Silicon ◽

Barrier Layer ◽

Silicon Quantum Dots ◽

Amorphous Silicon Carbide ◽

Photovoltaic Application ◽

Carbide Matrix ◽

Silicon Carbide Matrix

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Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽

10.3390/mi12040354 ◽

2021 ◽

Vol 12 (4) ◽

pp. 354

Author(s):

Qianqian Liu ◽

Xiaoxuan Chen ◽

Hongliang Li ◽

Yanqing Guo ◽

Jie Song ◽

...

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Thermal Annealing ◽

Chemical Vapor ◽

Peak Position ◽

Excitation Wavelength ◽

Very High Frequency ◽

Amorphous Silicon Nitride ◽

Silicon Nitride Films ◽

High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

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