Microstructure of Sputter Deposited TiO2/SiO2 Multilayer Optical Coatings

2000 ◽  
Vol 654 ◽  
Author(s):  
E. Sutter ◽  
P. Sutter ◽  
J.J. Moore
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Low Temperature ◽  
Optical Filters ◽  
Optical Coatings ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Improved Stability ◽  
Sputter Deposited

AbstractThe microstructure of TiO2/SiO2 multilayer optical filters has been investigated in detail by cross-sectional transmission electron microscopy and related to their optical properties and stability. The amorphous TiO2 layers in the as-deposited multilayers are found to consist of nanocolumns and intercolumnar regions with non-stoichiometric or lower density material. In humid ambients this microstructure absorbs moisture which causes a shift in the absorption edge of the filters. Upon annealing the TiO2layers are found to recrystallize into the low-temperature anatase modification which leads to significantly improved stability of the optical properties of the filters.

On Nature of Resonant Transversal Kerr Effect in InMnAs and GaMnAs Layers

2010 ◽  
Vol 168-169 ◽  
pp. 35-38 ◽  
Author(s):  
E.A. Gan'shina ◽  
L.L. Golik ◽  
V.I. Kovalev ◽  
Z.E. Kun’kova ◽  
M.P. Temiryazeva ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Laser Ablation ◽  
Kerr Effect ◽  
Room Temperature ◽  
Optical Constants ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Resonant Character

Optical and magneto-optical properties of In(Ga)MnAs layers fabricated by laser ablation on GaAs(100) substrates were studied. Spectra of the optical constants and the transversal Kerr effect (TKE) depended substantially on the conditions of layer fabrication and testified to the presence of MnAs inclusions in all the samples. The cross-sectional transmission electron microscopy revealed the presence in the layers of inclusions 10-40 nm in size. At room temperature, a strong resonant band was observed in the TKE spectra of some In(Ga)MnAs layers in the energy range 0.5-2.7 eV. The resonant character of the TKE spectra was explained by excitation of surface plasmons in the MnAs nanoclusters embedded in the semiconductor host.

AlInAs Band Gap Modulations Observed by Tem and Optical Measurements

1995 ◽  
Vol 417 ◽  
Author(s):  
E. Bearzi ◽  
T. Benyattou ◽  
C. Bru-Chevallier ◽  
G. Guillot ◽  
J. C. Harmand ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Low Temperature ◽  
Band Gap ◽  
Growth Temperature ◽  
Optical Measurements ◽  
Mbe Growth ◽  
Composition Modulation ◽  
Transmission Electron

AbstractAt a low MBE growth temperature (400°C), an anisotropic composition modulation has been observed by Transmission Electron Microscopy (TEM) on AIlnAs layers. Optical measurements have been performed on these samples and compared with classical AllnAs grown at 530°C. We show the clustering “organization” on the low temperature layers and we propose some hypothesis to explain the composition modulation effects on the AlInAs optical properties.

Transmission electron microscopy study of the structure of radio frequency sputter-deposited yttria-stabilized zirconia thin films

2003 ◽  
Vol 18 (1) ◽  
pp. 195-200 ◽  
Author(s):  
David E. Ruddell ◽  
Brian R. Stoner ◽  
Jeffrey Y. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Oxygen Levels ◽  
Transmission Electron ◽  
Sputter Deposited

Transmission electron microscopy (TEM) was used to investigate the structural properties of sputter-deposited yttria-stabilized zirconia (YSZ) thin films. YSZ films were deposited over a range of temperatures and background oxygen levels. Additionally, a multilayered structure was produced by cyclic application of a substrate bias. Plan-view TEM showed that temperature and oxygen levels did not have a significant effect on grain size but did alter the phases present in the thin films. Cross-sectional TEM showed the development of texture in the multilayer film, both within the individual layers and in the entire film.

Transient Diffusion and Gettering of Au and Cu to Cavities in Si

1995 ◽  
Vol 378 ◽  
Author(s):  
J. Wong-Leung ◽  
J. S. Williams ◽  
E. Nygren
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Thermal Processing ◽  
Processing Conditions ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Device Processing ◽  
Device Structures ◽  
Internal Cavities

AbstractThis paper addresses the diffusion and gettering of Cu and Au to internal cavities in Si introduced by H-implantation. Rutherford backscattering and channeling and cross-sectional transmission electron microscopy are the main analysis methods used. During annealing at temperatures and times typical of low temperature device processing conditions, we observe a transient gettering regime in which implanted Au and Cu segregate to cavities leaving metal concentrations in the Si lattice well below the solubility level. Longer times and/or higher temperatures are required for equilibrium to be reached. These results may have important implications for developing optimum gettering strategies during thermal processing of device structures.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

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