Charge carrier transport in a-Si:H/c-Si heterojunctions
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ABSTRACTContactless transient photoconductivity measurements of a-Si:H / c-Si heterojunctions are presented. It is shown that n a-Si:H / n c-Si junctions furnish an excellent passivation of the n c-Si surface. For i a-Si:H / n c-Si junctions the passivation is better for thicker films, whereas for very thin films (10 nm or less) a deviating behaviour probably due to inhomogeneities is observed. For the p a-Si:H / n c-Si junction separation of excess charge carriers in the space charge region is observed leading to a slowly decaying tail of the signal. This separation is also observed in thick i a-Si:H / n c-Si samples where electrons are injected from the a-Si:H film in the c-Si substrate.
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2017 ◽
Vol 9
(51)
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pp. 44799-44810
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2020 ◽
Vol 124
(38)
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pp. 20757-20764
2000 ◽
Vol 222
(1)
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pp. 179-183
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2013 ◽
Vol 205-206
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pp. 293-298
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