Photoluminescence and Photoluminescence Excitation Spectra of GaAs Grown Directly on Si

1986 ◽  
Vol 67 ◽  
Author(s):  
S. Zemon ◽  
S. K. Shastry ◽  
P. Norris ◽  
C. Jagannath ◽  
G. Lambert

ABSTRACTThe photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K. A second line, also identified as intrinsic, dominates the spectra below 100 K. A biaxial tensile strain is proposed to account for the two intrinsic lines through a splitting of the valence band degeneracy.

2021 ◽  
Vol 197 ◽  
pp. 110644
Author(s):  
Juan Song ◽  
Zhao Ding ◽  
Xue-Fei Liu ◽  
Ze-Chen Huang ◽  
Jia-Wei Li ◽  
...  

Author(s):  
В.П. Смагин ◽  
А.А. Исаева ◽  
Е.А. Шелепова

Nanoscale particles ZnS:Nd3+, CdS:Nd3+ and (Zn,Cd)S:Nd3+ were synthesized and doped in a polymerizing methyl methacrylate medium during the production of optically transparent polyacrylate composites of the composition PMMA/ZnS:Nd3+, PMMA/CdS:Nd3+ and PMMA/(Zn,Cd)S:Nd3+. The excitation of photoluminescence (FL) and FL of semiconductor structures in composites is associated with the transition of electrons from the valence band to the conduction band and to the levels of structural defects of semiconductor particles, followed by recombination at these levels. Based on changes in the excitation spectra of FL and FL composites, assumptions are made about the structure of particles, the distribution of Nd3+ ions in it and their effect on photoluminescence.


2019 ◽  
Vol 3 (1) ◽  
Author(s):  
János Pető ◽  
Gergely Dobrik ◽  
Gergő Kukucska ◽  
Péter Vancsó ◽  
Antal A. Koós ◽  
...  

Abstract MoS2 single layers are valued for their sizeable direct bandgap at the heart of the envisaged electronic and optoelectronic applications. Here we experimentally demonstrate that moderate strain values (~2%) can already trigger an indirect bandgap transition and induce a finite charge carrier density in 2D MoS2 layers. A conclusive proof of the direct-to-indirect bandgap transition is provided by directly comparing the electronic and optical bandgaps of strained MoS2 single layers obtained from tunneling spectroscopy and photoluminescence measurements of MoS2 nanobubbles. Upon 2% biaxial tensile strain, the electronic gap becomes significantly smaller (1.45 ± 0.15 eV) than the optical direct gap (1.73 ± 0.1 eV), clearly evidencing a strain-induced direct to indirect bandgap transition. Moreover, the Fermi level can shift inside the conduction band already in moderately strained (~2%) MoS2 single layers conferring them a metallic character.


RSC Advances ◽  
2017 ◽  
Vol 7 (82) ◽  
pp. 52065-52070 ◽  
Author(s):  
Lin Wei ◽  
Xiaoming Zhang ◽  
Xiaobiao Liu ◽  
Hongcai Zhou ◽  
Bo Yang ◽  
...  

C2N6S3 sustains a biaxial tensile strain up to 24% and its Fermi velocity can be tuned by biaxial strain.


2018 ◽  
Vol 97 (19) ◽  
Author(s):  
D. Saladukha ◽  
M. B. Clavel ◽  
F. Murphy-Armando ◽  
G. Greene-Diniz ◽  
M. Grüning ◽  
...  

2019 ◽  
Vol 21 (27) ◽  
pp. 15151-15156 ◽  
Author(s):  
Guang Yang ◽  
Jia Li ◽  
Ze Liu ◽  
Congcong Li ◽  
Xiujuan Mao

Spin splitting, valley splitting and Berry curvature at the K and K′ valleys of a MoS2/CoO(111) heterostructure can be tuned continually by biaxial tensile strain.


2018 ◽  
Vol 20 (43) ◽  
pp. 27611-27620 ◽  
Author(s):  
Armin Taheri ◽  
Carlos Da Silva ◽  
Cristina H. Amon

A first-principles study is conducted to investigate the effect of biaxial tensile strain on phonon properties and thermal conductivity of buckled phosphorene and arsenene, novel two-dimensional (2D) materials of group-VA.


2016 ◽  
Vol 4 (20) ◽  
pp. 4538-4545 ◽  
Author(s):  
H. Y. Lv ◽  
W. J. Lu ◽  
D. F. Shao ◽  
H. Y. Lu ◽  
Y. P. Sun

The thermoelectric performance of the ZrS2monolayer is greatly enhanced by the biaxial tensile strain, due to the simultaneous increase of the Seebeck coefficient and decrease of the thermal conductivity.


2016 ◽  
Vol 124 ◽  
pp. 183-189 ◽  
Author(s):  
Toktam Morshedloo ◽  
Mahmood Rezaee Roknabadi ◽  
Mohammad Behdani ◽  
Mohsen Modarresi ◽  
Ali Kazempour

2017 ◽  
Vol 196 ◽  
pp. 361-364
Author(s):  
Li-Bin Shi ◽  
Ming-Biao Li ◽  
Xiao-Ming Xiu ◽  
Xu-Yang Liu ◽  
Kai-Cheng Zhang ◽  
...  

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