Photoluminescence and Photoluminescence Excitation Spectra of GaAs Grown Directly on Si
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ABSTRACTThe photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K. A second line, also identified as intrinsic, dominates the spectra below 100 K. A biaxial tensile strain is proposed to account for the two intrinsic lines through a splitting of the valence band degeneracy.
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2019 ◽
Vol 21
(27)
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pp. 15151-15156
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2018 ◽
Vol 20
(43)
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pp. 27611-27620
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2016 ◽
Vol 4
(20)
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pp. 4538-4545
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2016 ◽
Vol 124
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pp. 183-189
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