Stability Improvement of Nickel Silicide with Co Interlayer on Si, Polysilicon and SiGe

2001 ◽  
Vol 670 ◽  
Author(s):  
Jer-shen Maa ◽  
Douglas J. Tweet ◽  
Yoshi Ono ◽  
Lisa Stecker ◽  
Sheng Teng Hsu
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Sheet Resistance ◽  
Nickel Silicide ◽  
Formation Temperature ◽  
Facet Structure ◽  
High Temperature Anneal ◽  
Lower Temperature ◽  
Co Addition ◽  
Thermal Stability Of

ABSTRACTThermal stability of nickel silicide is improved by adding a thin Co interlayer at Ni/Si interface. After high temperature anneal, the low sheet resistance of silicide and the low junction leakage of the ultra-shallow junction show the lack of film degradation. The transformation to disilicide phase occurred at a lower temperature. At 850°C, interface shows the truncated facet structure extended 100° to 200° below silicide/Si interface. With Co addition, nickel silicide formed on polysilicon and on SiGe films also show improved thermal stability and low sheet resistance. Formation temperature of disilicide phase occurred at lower temperature in all these cases.

Thermal stability of nickel-cobalt multilayer silicide

2005 ◽  
Vol 891 ◽  
Author(s):  
Kil Jin Han ◽  
Yu Jung Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Depth Profile ◽  
Ternary Phase ◽  
Nickel Silicide ◽  
Composition Gradient ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Thermal Stability Of ◽  
Xps Depth Profile

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

Synthesis, Characterization and Oxidation Behavior of a Novel Curable Liquid Polysilane Precursors for C/C-SiC Composite

2011 ◽  
Vol 217-218 ◽  
pp. 1673-1678
Author(s):  
Kang Kang Guo ◽  
Yan Bing Liu ◽  
Hui Min Qi ◽  
Fa Rong Huang ◽  
Lei Du
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
1H Nmr ◽  
Oxidation Behavior ◽  
Temperature Resistance ◽  
Unsaturated Bond ◽  
Oxidation Performance ◽  
Ft Ir ◽  
Lower Temperature ◽  
Thermal Stability Of

A novel curable liquid polysilane (CLS) containing reactive unsaturated bond and Si-H was synthesized from dichloromethylvinylsilae, methyldichlorosilae and Na in presence of 18-crown-6 under sonication at relatively lower temperature and its structure was characterized by FT-IR, 1H-NMR. The cure behavior of CLS was investigated by DSC,FTIR. Thermal stability of cured CLS was examined by TGA. The results showed that the cured polysilane exhibits good anti-oxidation performance under high temperature. And the sinted CLS exhibited high temperature resistance and good ceramic formability.

Simultaneous Implant Activation and Isolation Formation in GaAs in a Single High-Temperature Anneal

1992 ◽  
Vol 262 ◽  
Author(s):  
Kei-Yu Ko ◽  
S. Chen ◽  
G. Braunstein ◽  
L.-R. Zheng ◽  
S.-T. Lee
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Temperatures ◽  
Active Regions ◽  
High Resistivity ◽  
Thermally Stable ◽  
Electrical Isolation ◽  
Device Processing ◽  
High Temperature Anneal ◽  
Thermal Stability Of

ABSTRACTUsing void-related compensation in Al-implanted GaAs, high-resistivity isolation regions that are thermally stable to high temperatures (> 700 °C) are demonstrated. The high-temperature thermal stability of the isolation regions allows the simplification of device processing in which a single high-temperature anneal (e.g., at 900 °C) can be used to activate the implant dopants in the device-active regions, and simultaneously to convert the Al-implanted regions highly resistive for electrical isolation. Other advantages of using void-related isolation will also be discussed.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Increased Thermal Stability of Co-silicide Using Co-Ta Alloy Films

2001 ◽  
Vol 670 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Grain Boundary ◽  
Reaction Rate ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Alloy Films ◽  
Post Annealing ◽  
Alloy Process ◽  
Thermal Stability Of

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.

The improvement of thermal stability of nickel silicide by adding a thin Zr interlayer

2006 ◽  
Vol 83 (2) ◽  
pp. 345-350 ◽  
Author(s):  
Wei Huang ◽  
Li-Chun Zhang ◽  
Yu-Zhi Gao ◽  
Han-Yan Jin
Keyword(s):  
Thermal Stability ◽  
Nickel Silicide ◽  
Thermal Stability Of

Thermal stability of high-temperature materials. Part 1

2004 ◽  
Vol 45 (5) ◽  
pp. 327-332 ◽  
Author(s):  
V. V. Kolomeitsev ◽  
S. A. Suvorov ◽  
E. F. Kolomeitseva
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
High Temperature Materials ◽  
Thermal Stability Of
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