Space Radiation Effects in Advanced Solar Cell Materials and Devices

2001 ◽  
Vol 692 ◽  
Author(s):  
R. J. Walters ◽  
G. P. Summers

AbstractAn investigation of the physical mechanisms governing the response of III-V based solar cells to particle irradiation is presented. The effect of particle irradiation on single and multijunction solar cells is studied through current vs. voltage, spectral response, and deep level transient spectroscopy measurements. The basic radiation response mechanisms are identified, and their effects on the solar cell electrical performance are described. In particular, a detailed analysis of multijunction InxGa1-xP/InyGa1-yAs/Ge devices is presented. The MJ cell response is found to be more strongly affected by the internal cell structure than by the In content.

2009 ◽  
Vol 1211 ◽  
Author(s):  
Kai Yang ◽  
Mohamed A El-Emawy ◽  
Tingyi Gu ◽  
Andreas Stintz ◽  
Luke F Lester

AbstractQuantum dot (QD) solar cells have been actively investigated recently since they have been theoretically shown to have the potential to realize high conversion efficiencies. However, very little research has analyzed the effect the dots have on the transport or recombination effects in the device. In this paper, we report the I-V and spectral response characteristics of InAs/InGaAs “dots-in-a-well” (DWELL) solar cells and compared them with GaAs control cells. The QD cells show higher short circuit density (Jsc) and better long-wavelength efficiency compared to the control cell. By comparing the dark current behavior of the QD cells to the GaAs control cells, we have conservatively estimated the concentration level at which the QD solar cells would surpass GaAs control devices.The quantum dot solar cells are grown by molecular beam epitaxy using the DWELL technique and a standard pin structure. The control cell structure is similar to the QD one except that there are no InAs dots or surrounding InGaAs quantum wells. The light I-V characteristics were measured under AM1.5G at 100 mW/cm2 illumination. The control cell has a Voc of 0.89V and a Jsc of 9.1 mA/cm2. The InAs QD solar cell has a Voc of 0.68 V and a Jsc of 12.2 mA/cm2. The QD cell has about a 33% larger short circuit current density compared to the GaAs control cell, which is mainly due to the higher photon absorption rate related to the DWELL structure. The spectrum response data show that the GaAs control cell and the QD cell have similar external quantum efficiency (EQE) in the visible to near-IR range (400-870nm). Beyond the GaAs absorption edge (870nm), the QD solar cell shows extended response with much higher measured EQE up to ˜1200 nm. This is strong evidence of the contribution from the InAs QDs and InGaAs QWs, the latter being the primary contributor to the increased Jsc.We calculated the “local” ideality factor from measured dark IV data, and then substituted it into a single diode equation to get the “local” reverse saturation current. Whereas the GaAs control shows the typical monotonically decreasing ideality from 0.3 to 0.8V, a linearly increasing ideality is observed in the QD cell. Based on the measured dark currents, and neglecting series resistance, we extrapolated the IV curves to higher voltages and found that they intercept at ˜2×104 mA/cm2. Dividing the intercept point Jdark by the Jsc of the QD cell conservatively estimates the light concentration (˜1400×) above which the QD cell would have a higher Voc than the GaAs cell assuming additivity applies. This result is mainly attributed to the unique carrier transport properties that are introduced into the solar cell devices that utilize QDs.


2004 ◽  
Vol 808 ◽  
Author(s):  
M. Zeman ◽  
V. Nádazdy ◽  
J.W. Metselaar

ABSTRACTComputer simulations of single-junction hydrogenated amorphous silicon (a-Si:H) solar cells with different thickness of the intrinsic layer were carried out in order to study the role of charge gap states in their light-induced degradation. It is demonstrated that it is the decrease of positively charged states above midgap, Dh, and the increase of neutral states around midgap,Dz, and negatively charged states below midgap, De in the intrinsic layer that result in a drop of performance of the solar cells due to light soaking. These changes in the gap states are in accordance with our recent experimental results from the charge deep-level transient spectroscopy on undoped a-Si:H. The experimentally observed changes in the dark and illuminated J-V curves and spectral response could not be simulated with the same set of input parameters by only increasing the defect-state density in the intrinsic layer.


2017 ◽  
Vol 8 (6) ◽  
pp. 549-522
Author(s):  
Vytautas Makarskas ◽  
Mindaugas Jurevičius ◽  
Artūras Kilikevičius

Solar cells are one of the most popular renewable energy generation technologies, because they are reliable, low operating and maintenance costs, to conclude without any moving parts and is a boundless source of energy. In any solar cell can avoid mechanical vibrations, which may produce the solar cell glass, damage to the inner structure. In order to determine the influence of mechanical vibrations of the solar cell structure was carried out theoretical and experimental modal analysis. The study found dangerous solar cell frequencies and their deformation and optimize the method of attachment which provides a better solar cell stability. Saulės elementai – vieni populiariausių atsinaujinančių energijos gavybos technologijų, nes jie patikimi, jų mažos eksploatavimo ir priežiūros išlaidos, šie elementai sudaryti be jokių judančių dalių ir yra beribis energijos šaltinis. Bet saulės elementas neišvengia mechaninių virpesių, kurie gali įskelti saulės elemento stiklą, pažeisti vidinę konstrukciją. Siekiant nustatyti mechaninių virpesių įtaką saulės elemento konstrukcijai, buvo atliktos teorinės ir eksperimentinės modalinės analizės. Tyrime buvo rasti pavojingi saulės elemento dažniai ir jų deformacijos, rastas optimalus tvirtinimo būdas, kuris suteikia geresnį saulės elemento stabilumą.


2019 ◽  
Vol 48 (30) ◽  
pp. 11460-11468 ◽  
Author(s):  
Liang Zhang ◽  
Langping Dong ◽  
Baiqi Shao ◽  
Shuang Zhao ◽  
Hongpeng You

Novel NIR phosphors possess broadband absorption in the UV–Vis region and strong NIR emission, matching well with the spectral response of the C–Si solar cell and having a potential application in the C–Si solar cell.


2017 ◽  
Vol 140 (1) ◽  
Author(s):  
Sandeep S. Joshi ◽  
Ashwinkumar S. Dhoble

The solar photovoltaic thermal system (PVT) facilitates conversion of incoming solar radiations into heat and electricity simultaneously. The beam split photovoltaic thermal system (BSPVT) is one of the PVT systems. In this system, the incoming solar beam is splitted and used separately for PV and thermal system. The feasibility of water, silicone oil, and coconut oil as spectrum filter for C–Si solar photovoltaic system is reported in the literature recently. However, the changes in the optical behavior of the liquids due to extended exposure to sunlight (aging effect) had not been considered in most of the previous studies. The current study includes the methodology for the selection of liquids for BSPVT systems, estimation of external quantum efficiency (EQE) of a solar cell using liquids, and the aging effect on the liquid spectrum filters. The spectral response of the solar cell is analyzed using BENTHAM, (PVE 300) for 300–1100 nm. In this study, it has been observed that the aging of silicone oil reduces the electrical performance of the solar cell. On the other hand, the aged coconut oil improves the electrical performance of the solar cell as compared to the fresh coconut oil spectrum filter.


2020 ◽  
Vol 13 (3) ◽  
Author(s):  
Sebastian Reichert ◽  
Jens Flemming ◽  
Qingzhi An ◽  
Yana Vaynzof ◽  
Jan-Frederik Pietschmann ◽  
...  

2020 ◽  
Vol 153 (12) ◽  
pp. 124703
Author(s):  
Weitao Lian ◽  
Rongfeng Tang ◽  
Yuyuan Ma ◽  
Chunyan Wu ◽  
Chao Chen ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document