Properties and Local Structure of Plasma-Deposited Amorphous Silicon-Carbon Alloys
Keyword(s):
ABSTRACTHydrogenated amorphous silicon-carbon alloy films were plasma-deposited from metnane and silane, varying gas ratio, R.F. power and substrate temperature. Carbon addition increases the optical gap, but also raises the dangling bond density while decreasing conductivity. Low C alloys can be gas-phase doped both p and n type. In the IR spectra the various Si-C stretching modes observed between 650 and 780 cm-1 are explained by back bonding variations. A tentative method of assigning this shift to back bonding of C to the Si is given. A distribution of modes is observed for all alloys, with each mode appearing even at 2% C. The distribution is sensitive to substrate temperature, but is stable after vacuum annealing to 400°C.
1998 ◽
Vol 323
(1-2)
◽
pp. 115-125
◽
1994 ◽
Vol 33
(Part 2, No. 9B)
◽
pp. L1295-L1297
◽
2001 ◽
Vol 66
(1-4)
◽
pp. 259-265
◽
Keyword(s):