Time Resolved Tem of Laser-Induced Phase Transitions in a-Ce And a-Si/Al-Films

1986 ◽  
Vol 71 ◽  
Author(s):  
O. Bostanjoglo ◽  
F. E. Endruschat ◽  
W. Tornow
Keyword(s):  
Phase Transitions ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Germanium ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
Potential Applications

AbstractThis paper presents an improved new method for studying the dynamics of laser induced phase transitions down to the submicron-nanosecond scale by means of a modified commercial Transmission Electron Microscope (TEM) /1/. Results on Pulsed Laser Annealing (PLA) of amorphous Germanium and a-Si/Al films are described. Potential applications and limits of this method are briefly discussed.

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

In situ electron diffraction study of synthetic (Ca1-xSrx)2MgSi2O7 åkermanites

2000 ◽  
Vol 215 (9) ◽  
Author(s):  
H. Rager ◽  
M. Schosnig ◽  
A.K. Schaper ◽  
A. Kutoglu ◽  
W. Treutmann
Keyword(s):  
Phase Transitions ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Diffraction Study ◽  
Solid Solutions ◽  
Transmission Electron Microscope ◽  
Electron Diffraction Study ◽  
Modulated Structure ◽  
Transmission Electron

This paper deals with transmission electron microscope experiments of Ca,Sr-åkermanite solid solutions at temperatures between 100 K and 375 K. The aim of the investigations was to study the compositional and temperature dependence of phase transitions from the normal to the incommensurately modulated structure of(Ca

Activation of Si-N Modes in Silicon by Pulsed Laser Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
H. J. Stein ◽  
P. S. Peercy ◽  
C. R. Hills
Keyword(s):  
Fine Structure ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Realistic Model ◽  
Vibrational Modes ◽  
Annealing Furnace ◽  
Furnace Annealing ◽  
Structure Defects ◽  
Pulsed Laser Annealing ◽  
Transmission Electron

ABSTRACTRetention and bonding of nitrogen implanted into crystalline Si were examined by infrared absorption (ir) and transmission electron microscopy (TEM) after furnace and pulsed laser annealing. Localized Si-N vibrational modes for N-N pairs are observed, and the associated ir band intensities increase upon pulsed annealing. Furnace annealing above 600°C decreases the ir intensity for N-N pairs and fine structure defects appear in TEM. Subsequent laser annealing removes most of the fine structure and reactivates the pair spectrum which we interpret as dissolution of N precipitates and pair formation upon quenching from the melt. Any realistic model for N in Si must include the formation and consequences of N-N pairs.

Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
John T.A. Pollock ◽  
Alex Rose
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pressure Data ◽  
Incident Laser ◽  
Time Resolved ◽  
Dissociation Pressure ◽  
Pulsed Laser Annealing ◽  
Modelling Studies ◽  
Maximum Temperatures ◽  
Good Agreement

ABSTRACTFrom reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.

scholarly journals Time-resolved Cathodoluminescence in a Transmission Electron Microscope Applied to NV Centers in Diamond

2020 ◽  
Vol 26 (S2) ◽  
pp. 2022-2023
Author(s):  
Sophie Meuret ◽  
Yves Auad ◽  
Luiz Tizei ◽  
H.C. Chang ◽  
Florent Houdellier ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Time Resolved ◽  
Transmission Electron ◽  
Nv Centers
Sign in / Sign up

Export Citation Format

Share Document