Activation of Si-N Modes in Silicon by Pulsed Laser Annealing

ABSTRACTRetention and bonding of nitrogen implanted into crystalline Si were examined by infrared absorption (ir) and transmission electron microscopy (TEM) after furnace and pulsed laser annealing. Localized Si-N vibrational modes for N-N pairs are observed, and the associated ir band intensities increase upon pulsed annealing. Furnace annealing above 600°C decreases the ir intensity for N-N pairs and fine structure defects appear in TEM. Subsequent laser annealing removes most of the fine structure and reactivates the pair spectrum which we interpret as dissolution of N precipitates and pair formation upon quenching from the melt. Any realistic model for N in Si must include the formation and consequences of N-N pairs.

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Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

MRS Proceedings ◽

10.1557/proc-1-407 ◽

1980 ◽

Vol 1 ◽

Author(s):

S.W. Chiang ◽

Y.S. Liu ◽

R.F. Reihl

Keyword(s):

Ion Implantation ◽

Polycrystalline Silicon ◽

Laser Annealing ◽

Pulsed Laser ◽

High Dose ◽

Pulsed Laser Annealing ◽

Transmission Electron ◽

A Cell ◽

Ft Ir ◽

Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

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Time Resolved Tem of Laser-Induced Phase Transitions in a-Ce And a-Si/Al-Films

MRS Proceedings ◽

10.1557/proc-71-345 ◽

1986 ◽

Vol 71 ◽

Cited By ~ 5

Author(s):

O. Bostanjoglo ◽

F. E. Endruschat ◽

W. Tornow

Keyword(s):

Phase Transitions ◽

Electron Microscope ◽

Transmission Electron Microscope ◽

Laser Annealing ◽

Pulsed Laser ◽

Amorphous Germanium ◽

Time Resolved ◽

Pulsed Laser Annealing ◽

Transmission Electron ◽

Potential Applications

AbstractThis paper presents an improved new method for studying the dynamics of laser induced phase transitions down to the submicron-nanosecond scale by means of a modified commercial Transmission Electron Microscope (TEM) /1/. Results on Pulsed Laser Annealing (PLA) of amorphous Germanium and a-Si/Al films are described. Potential applications and limits of this method are briefly discussed.

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High Voltage Transmission Electron Microscopy of Low Power Pulsed Laser Annealing of Zn+Implanted GaAs

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.2597 ◽

1993 ◽

Vol 32 (Part 1, No. 6A) ◽

pp. 2597-2600 ◽

Cited By ~ 3

Author(s):

Nicolai Pashov ◽

Maria Kalitzova ◽

Gianfranco Vitali ◽

Marco Rossi ◽

Dieter Baither

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Low Power ◽

High Voltage ◽

Laser Annealing ◽

Pulsed Laser ◽

Pulsed Laser Annealing ◽

Transmission Electron ◽

High Voltage Transmission

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Direct Formation of C54 Phase on the Basis of C40 TiSi2 and Its Applications in Deep Sub-Micron Technology

MRS Proceedings ◽

10.1557/proc-670-k6.4 ◽

2001 ◽

Vol 670 ◽

Cited By ~ 1

Author(s):

S. Y. Chen ◽

Z. X. Shen ◽

S. Y. Xu ◽

A. K. See ◽

L. H. Chan ◽

...

Keyword(s):

Laser Annealing ◽

Annealing Temperature ◽

Pulsed Laser ◽

Phase Growth ◽

Patterned Wafers ◽

Pulsed Laser Annealing ◽

Transmission Electron ◽

Annealing Step ◽

Direct Formation ◽

New Phase

ABSTRACTA simple and novel salicidation process applying pulsed laser annealing as the first annealing step was used to induce TiSi2 formation. Both Raman spectroscopy and transmission electron microscope results confirm the formation of a new phase of Ti disilicide, the pure C40 TiSi2 after laser irradiation. Direct C54 phase growth on the basis of C40 template bypassing the C49 phase is accomplished at the second annealing temperature as low as 600°C. Line width independent formation of the C54 phase was observed on patterned wafers using this salicidation process and “fine line effect” is thus eliminated.

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Recrystallization of Amorphous Silicon Using Rapid Thermal Processing, Laser Annealing and Furnace Heating

MRS Proceedings ◽

10.1557/proc-342-297 ◽

1994 ◽

Vol 342 ◽

Cited By ~ 1

Author(s):

J. Viatella ◽

R.K. Singi ◽

R.P.S. Thiakur ◽

G. Sandhu ◽

S.D. Harkness

Keyword(s):

Amorphous Silicon ◽

Laser Annealing ◽

Laser Wavelength ◽

X Ray Diffraction ◽

Incoherent Light ◽

Furnace Annealing ◽

X Ray ◽

Pulsed Laser Annealing ◽

Conventional Furnace ◽

Transmission Electron

ABSTRACTRecrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimner laser (wavelength=248 nm, energy density = 0.1−0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.

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