Characteristics Analysis of Saw Filter Using Al0.36Ga0.64N Thin Film

2002 ◽  
Vol 720 ◽  
Author(s):  
Sun-Ki Kim ◽  
Min-Jung Park ◽  
Cheol-Yeong Jang ◽  
Hyun-Chul Choi ◽  
Jung-Hee Lee ◽  
...  

AbstractAlxGa1-xN sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/°C were measured from the SAW devices fabricated on the AlxGa1-xN sample, when kh value was 0.078, at temperatures between –30 °C and 60 °C Electromechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Walter Water ◽  
Yi-Shun Lin ◽  
Chi-Wei Wen

A TiO2thin film deposited on a 90° rotated 42°45′ ST-cut quartz substrate was applied to fabricate a Love wave ultraviolet photodetector. TiO2thin films were grown by radio frequency magnetron sputtering. The crystalline structure and surface morphology of TiO2thin films were examined using X-ray diffraction, scanning electron microscope, and atomic force microscope. The effect of TiO2thin film thickness on the phase velocity, electromechanical coupling coefficient, temperature coefficient of frequency, and sensitivity of ultraviolet of devices was investigated. TiO2thin film increases the electromechanical coupling coefficient but decreases the temperature coefficient of frequency for Love wave propagation on the 90° rotated 42°45′ ST-cut quartz. For Love wave ultraviolet photodetector application, the maximum insertion loss shift and phase shift are 2.81 dB and 3.55 degree at the 1.35-μm-thick TiO2film.


2003 ◽  
Vol 764 ◽  
Author(s):  
Sheng-Yuan Chu ◽  
Te-Yi Chen ◽  
Walter Water ◽  
Tung-Yi Huang

AbstractPoly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the lead-based ceramic substrates by r.f. magnetron sputtering technique. The deposited films were characterized as a function of deposition time and argon-oxygen gas flow ratio. Crystalline structures of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Highly oriented films with c-axis normal to the substrates can be obtained by depositing under a total pressure of 10mTorr containing 50% argon and 50% oxygen and r.f. power of 70W for 3 hours. The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of SAW device with ZnO/IDT/PT-ceramic structure were investigated. It shows that the preferred oriented ZnO film is beneficial for improving the electromechanical coupling coefficient of SAW device.


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