Characteristics Analysis of Saw Filter Using Al0.36Ga0.64N Thin Film
Keyword(s):
AbstractAlxGa1-xN sample with x=0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 m/s and TCF (temperature coefficient of frequency) of -51.20 ppm/°C were measured from the SAW devices fabricated on the AlxGa1-xN sample, when kh value was 0.078, at temperatures between –30 °C and 60 °C Electromechanical coupling coefficient was ranged from 1.26 % to 2.22 %. The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.
2014 ◽
Vol 2014
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pp. 1-6
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2014 ◽
Vol 18
(sup4)
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pp. S4-606-S4-609
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2005 ◽
Vol 14
(3-7)
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pp. 1175-1178
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