High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient

2014 ◽  
Vol 105 (13) ◽  
pp. 133502 ◽  
Author(s):  
Wenbo Wang ◽  
Patrick M. Mayrhofer ◽  
Xingli He ◽  
Manuel Gillinger ◽  
Zhi Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Coupling Coefficient ◽  
High Performance ◽  
Electromechanical Coupling ◽  
Electromechanical Coupling Coefficient ◽  
Acoustic Wave Devices

scholarly journals Surface acoustic wave temperature properties in alpha-GeO2 crystal

2021 ◽  
Vol 2131 (5) ◽  
pp. 052098
Author(s):  
R M Taziev
Keyword(s):  
Wave Propagation ◽  
Surface Wave ◽  
Acoustic Wave ◽  
Temperature Coefficient ◽  
Surface Acoustic Wave ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Propagation Direction ◽  
Electromechanical Coupling Coefficient ◽  
Wave Propagation Direction

Abstract In this study, the surface acoustic wave (SAW) temperature properties in flux-grown α-GeO2 crystal are numerically investigated. It is shown that the SAW velocity temperature change substantially depends only on the temperature coefficient of three elastic constants: C66, C44 and C14 for crystal cuts and wave propagation directions, where SAW has high electromechanical coupling coefficient. The SAW temperature coefficient of delay (TCD) for these crystal cuts are in the range from -40 ppm /°C to -70 ppm /°C. In contrast to alpha-quartz, the surface wave TCD values are not equal to zero in Z-, Y- , and Z- rotated cuts of α-GeO2 single crystal. Its values are comparable in the magnitude with the surface wave TCD values in lithium tantalate. In the crystal grown from the melt, the interdigital transducer (IDT) conductance has two times larger amplitude than that in hydrothermally grown a-GeO2. The leaky acoustic wave excited by IDT on Z+120°-cut and wave propagation direction along the X-axis, has an electromechanical coupling coefficient 5 times less than that for surface wave.

SURFACE-ACOUSTIC-WAVE FIELD AND ACOUSTO-OPTIC INTERACTION IN AlN/128-DEG-ROTATED Y-CUT X-PROPAGATION LiNbO3

2013 ◽  
Vol 27 (05) ◽  
pp. 1350032
Author(s):  
JUNTAO WANG ◽  
QUN HAN ◽  
JIPING NING ◽  
YANG HE
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Diffraction Efficiency ◽  
Coupling Coefficient ◽  
Electromechanical Coupling ◽  
Guided Wave ◽  
Electromechanical Coupling Coefficient ◽  
Overlap Integral ◽  
Aln Film ◽  
First Time

The efficiency of guided-wave acousto-optic (AO) interaction in AlN /128-deg-rotated Y-cut X-propagation lithium niobate (128-deg YX- LiNbO 3) structure is analyzed theoretically for the first time by determining the overlap integral between the optical and the surface acoustic wave (SAW) field distribution. The results show that the use of an AlN film can increase the phase velocity of SAW, the electromechanical coupling coefficient and the diffraction efficiency of AO interaction. A maximum of 9.33% for the electromechanical coupling coefficient is obtained when the normalized thickness of AlN film equals 0.09. The diffraction efficiency has a significant improvement when the normalized thickness of AlN film is increased from 0 to 0.05. And, the improvement for the TM polarization is more evident than that for the TE polarization. However, for a well-concentrated optical waveguide, the use of an AlN film reduces the diffraction efficiency of the TM polarization when the SAW frequency is low.

Properties of Surface Acoustic Waves in AlN And GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
Jianyu Deng ◽  
Daumantas Ciplys ◽  
Gang Bu ◽  
Michael Shur ◽  
Remis Gaska
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Coupling Coefficient ◽  
Acoustic Waves ◽  
Electromechanical Coupling ◽  
Surface Acoustic Waves ◽  
Elastic Displacement ◽  
Electromechanical Coupling Coefficient ◽  
Coupling Coefficients ◽  
Calculation Results

ABSTRACTThe surface acoustic wave velocities, electromechanical coupling coefficients, and the spatial distributions of both elastic displacement and electric potential have been calculated for various configurations of gallium nitride and aluminum nitride. The electromechanical coupling coefficient values of 0.13 % in GaN and 0.29 % in AlN have been predicted. The maximum electromechanical coupling coefficient values of 0.24 % at Euler angles (0, 54°, 90°) in GaN and 1.08 % at (0, 53°, 90°) in AlN have been found. For GaN layer-on- sapphire substrate structures, the SAW velocity and electromechanical coupling coefficient have been calculated as functions of layer thickness and acoustic wavelength. The experimentally measured values of the surface acoustic wave velocity and electromechanical coupling coefficient are in satisfactory agreement with the calculation results.

Sign in / Sign up

Export Citation Format

Share Document