Spin-Dependent Recombination in PPV and Polyfluorene LEDs

2002 ◽  
Vol 725 ◽  
Author(s):  
Anoop S. Dhoot ◽  
Neil C. Greenham

AbstractIn a polymer light-emitting diode, the fraction of excitons formed as singlets is of crucial importance in determining the quantum efficiency. We have shown that it is possible to measure excited state absorptions due to triplet excitons and polarons in working polymer LEDs, and we are able to quantify the triplet generation rate by measuring the strength of the triplet absorption. Here, we show that by careful study of singlet emission and triplet absorption in an LED based on a poly(p-phenylenevinylene) derivative we can obtain an accurate value of 83±7% for the singlet formation probability, significantly higher than the value of 25% predicted by simple spin statistics. We extend these measurements to devices based on poly(dioctyl-fluorene), where we find similarly high values for the singlet formation probability. In devices using the polyfluorene copolymer F8BT, we find that the triplet absorption is extremely small, consistent with even higher singlet formation probabilities.

Author(s):  
Yi-Mei Huang ◽  
Tse-Ying Chen ◽  
Deng-Gao Chen ◽  
Hsuan-Chi Liang ◽  
Cheng-Ham Wu ◽  
...  

35Cbz4BzCN, a novel universal host with long triplet lifetime, has been developed. The triplet excitons in 35Cbz4BzCN can be effectively harvested by phosphorescence and thermally activated delayed fluorescence emitters. In...


2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ezzah Azimah Alias ◽  
Muhammad Esmed Alif Samsudin ◽  
Steven DenBaars ◽  
James Speck ◽  
Shuji Nakamura ◽  
...  

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.


RSC Advances ◽  
2016 ◽  
Vol 6 (74) ◽  
pp. 70085-70090 ◽  
Author(s):  
Haichao Liu ◽  
Qing Bai ◽  
Weijun Li ◽  
Yachen Guo ◽  
Liang Yao ◽  
...  

Acceptor–donor–acceptor triphenylamine–phenanthroimidazole derivate (TPA–2PPI) servers as an emitter, whose device exhibits deep-blue emission, high efficiency and slow roll-off of efficiency.


2009 ◽  
Vol 79 (16) ◽  
Author(s):  
M. Lebental ◽  
H. Choukri ◽  
S. Chénais ◽  
S. Forget ◽  
A. Siove ◽  
...  

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