Rapid Thermal Oxidation of Polysilicon and Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
Jaim Nulman
Keyword(s):  
Silicon Dioxide ◽  
Density Of States ◽  
Growth Kinetics ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Single Crystal Silicon ◽  
Pure Oxygen ◽  
Process Time ◽  
Crystal Silicon ◽  
Kinetics Of

AbstractGrowth kinetics of silicon dioxide films grown by rapid thermal processing on polysilicon and single crystal silicon films is described. Oxides were grown in pure oxygen and oxygen with up to 4% HCI. For process time in the 1 to 120 s, oxide films thicknesses in the 2 to 36 nm are obtained with a uniformity of ±2% across 100 mm wafers. These oxides show an interface density of states of 5×109 eV−1cm−2 after a 30 s post-oxidation anneal in nitrogen ambient at 1050 C.

Material and Electrical Properties of Gate Dielectrics Grown by Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Nulman ◽  
J. P. Krusius ◽  
P. Renteln
Keyword(s):  
Silicon Dioxide ◽  
Thermal Processing ◽  
Material Characterization ◽  
Gate Dielectrics ◽  
Rapid Thermal Processing ◽  
Pure Oxygen ◽  
Dielectric Films ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTThe material and electrical characteristics of silicon dielectric films prepared via Rapid Thermal Processing (RTP) are described. A commercial RTP system with heat provided by tungsten-halogen lamps was used. Silicon dioxide films were grown in pure oxygen and in oxygen with 4% hydrogen chloride ambients. As grown films were either annealed in a nitrogen ambient or nitrided in an ammonia ambient. Film thickness ranges from 4 to 70 nm for RTP times from 0 to 300 s at 1150 C. Current-voltage and capacitance-voltage methods were used for electrical characteristics. Ellipsometry, Auger and TEM were used for material characterization.

Synchrotron Topographic Studies of the Influence of Rapid Thermal Processing on Defect Structures in Single Crystal Silicon.

1990 ◽  
Vol 209 ◽  
Author(s):  
Michael Dudley ◽  
Franklin F.Y. Wang ◽  
Thomas Fanning ◽  
Georgios Tolis ◽  
Jun Wu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Single Crystal Silicon ◽  
Dislocation Motion ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Geometry

ABSTRACTSynchrotron white beam X-ray diffraction topography in transmission geometry has been used to non-destructively investigate defect structures in silicon single crystal wafers, both prior and subsequent to a 60 second rapid thermal processing (RTP) treatment at 1050°C. Prior to RTP dislocations, precipitates and swirl defects were observed and characterized. Following RTP the following effects were observed: glide of individual dislocations and dislocation multiplication; and the enhancement of the strain field associated with the swirl defects. Precipitates appeared unaffected by RTP. This work shows that synchrotron topography is capable of non-destructively revealing significant dislocation motion induced by RTP under conditions were such motion is not thought to occur. This dislocation motion is likely to be detrimental to device performance. The technique enables determination of the conditions required to avoid such dislocation motion.

Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films

1990 ◽  
Vol 5 (10) ◽  
pp. 2133-2138 ◽  
Author(s):  
R. C. Cammarata ◽  
C. V. Thompson ◽  
C. Hayzelden ◽  
K. N. Tu
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Growth Kinetics ◽  
Three Dimensional ◽  
Single Crystal Silicon ◽  
Delta Function ◽  
Diffusion Field ◽  
Crystal Silicon ◽  
Silicon Thin Films ◽  
Kinetics Of

The nucleation and growth kinetics of NiSi2 precipitation in amorphous silicon thin films ion implanted with nickel was investigated using scanning transmission electron microscopy. It was found that the nucleation rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C. The growth kinetics of the precipitates at these temperatures were described by r ∝ tn, where r was the average radius and n was about 1/3. This behavior is consistent with models for growth of three-dimensional particles in a two-dimensional diffusion field. It was also found that the implanted amorphous films displayed an enhanced rate of single crystal silicon formation, apparently catalyzed by migrating silicide precipitates.

Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers

1990 ◽  
Vol 10 (3) ◽  
pp. 87-92 ◽  
Author(s):  
Michael Dudley ◽  
Franklin F.Y. Wang ◽  
Thomas Fanning ◽  
Georgios Tolis ◽  
Wu Jun ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
X Ray ◽  
Defect Microstructure

Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system

1984 ◽  
Vol 44 (6) ◽  
pp. 626-628 ◽  
Author(s):  
K. K. Ng ◽  
W. J. Polito ◽  
J. R. Ligenza
Keyword(s):  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Thin Silicon ◽  
Kinetics Of ◽  
Oxidation System

Kinetics of Ion Beam Synthesis of Sn and Sb Clusters in SiO2 Layers

2000 ◽  
Vol 647 ◽  
Author(s):  
Sabina Spiga ◽  
Sandro Ferrari ◽  
Marco Fanciulli ◽  
Bernd Schmidt ◽  
Karl-Heinz Heinig ◽  
...  
Keyword(s):  
Size Distribution ◽  
Thermal Processing ◽  
Cluster Size ◽  
Ion Beam ◽  
Rapid Thermal Processing ◽  
Cluster Size Distribution ◽  
Process Conditions ◽  
Ion Beam Synthesis ◽  
Kinetics Of ◽  
Implantation Fluence

AbstractIn this work we investigate the ion beam synthesis of Sn and Sb clusters in thin oxides. 80 keV (fluences of 0.1-1 × 1016 cm−2) Sn implantation in 85 nm thick SiO2, followed by annealing (800-1000°C for 30-300 sec under Ar or N 2 dry ambient) in a rapid thermal processing (RTP) system, leads to the formation of two cluster bands, near the middle of the SiO2 layer and the Si/SiO2 interface. In addition, big isolated clusters are randomly distributed between the two bands. Cluster-size distribution and cluster-crystallinity are related to implantation fluence and annealing time. Low energy (10-12 keV) Sb and Sn implantation (fluences 2-5 × 1015 cm−2) leads to the formation of very uniform cluster-size distribution. Under specific process conditions, only an interface cluster band is observed.

Transient Thermal Analysis for Rapid Thermal Processing of GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
F. K. Yang ◽  
S. J. Pien ◽  
R. Kwor
Keyword(s):  
Thermal Analysis ◽  
Silicon Dioxide ◽  
Oxide Layer ◽  
Thermal Processing ◽  
Rapid Heating ◽  
Rapid Thermal Processing ◽  
Doping Effect ◽  
Heating Process ◽  
Light Sources ◽  
Transient Thermal

ABSTRACTA thermal analysis is performed to simulate the rapid heating process for ion implanted GaAs with consideration of the doping effect. The results are for cases with various concentrations and thicknesses of doping layer. Also studied are the heating processes for silicon dioxide capped GaAs. The effects of the thickness of the oxide layer are discussed. The magnitude of the temperature differences across the wafer is addressed. The present analysis considers xenon-arc lamps and tungsten-halogen lamps as the light sources.

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