Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

MRS Proceedings ◽

10.1557/proc-747-v2.6 ◽

2002 ◽

Vol 747 ◽

Author(s):

K. Nomura ◽

H. Ohta ◽

K. Ueda ◽

T. Kamiya ◽

M. Hirano ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

Defect Density ◽

Field Effect Transistors ◽

Solid Phase ◽

Oxide Semiconductor ◽

Single Crystalline ◽

Transparent Oxide ◽

Improved Performance ◽

Transparent Oxide Semiconductors

ABSTRACTTransparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

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Fabrication of n-channel metal–oxide–semiconductor field-effect transistors with 0.2 μm gate lengths in 500 Å thin film silicon on sapphire

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585950 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2954

Author(s):

P. R. de la Houssaye

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.08kd04 ◽

2011 ◽

Vol 50 (8S2) ◽

pp. 08KD04 ◽

Author(s):

Koji Eriguchi ◽

Yoshinori Nakakubo ◽

Asahiko Matsuda ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Defect Density ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trade Off ◽

Optimization Methodology

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Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1852731 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032104 ◽

Author(s):

Shahram Ghanad Tavakoli ◽

Sungkweon Baek ◽

Hyo Sik Chang ◽

Dae Won Moon ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Solid Phase ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

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Improving the Characteristics of Ultra-Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted OXygen) by Selective Tungsten Deposition on Source and Drain Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.6290 ◽

1998 ◽

Vol 37 (Part 1, No. 12A) ◽

pp. 6290-6294

Author(s):

Yasuhiro Sato ◽

Toshihiko Kosugi ◽

Toshiaki Tsuchiya ◽

Hiromu Ishii

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Drain Region ◽

Ultra Thin Film

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Improved Performance of 4H-SiC Double Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors by Increasing RESURF Doses

Applied Physics Express ◽

10.1143/apex.1.101403 ◽

2008 ◽

Vol 1 ◽

pp. 101403 ◽

Author(s):

Masato Noborio ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Field ◽

Improved Performance ◽

Reduced Surface

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Effects Of Grain Boundaries On Channel Conduction In Thin Film Polysilicon On Silicon-Dioxide Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs)

10.1117/12.934956 ◽

1983 ◽

Author(s):

J. G. Fossum ◽

A. Ortiz ◽

H.-K Lim ◽

H.-W. Lam

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Silicon Dioxide ◽

Grain Boundaries ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4833815 ◽

2013 ◽

Vol 103 (22) ◽

pp. 223504 ◽

Author(s):

H. S. Shin ◽

J. H. Yum ◽

D. W. Johnson ◽

H. R. Harris ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Defect Density ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Interface Defect

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A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3173179 ◽

2009 ◽

Vol 106 (2) ◽

pp. 024504 ◽

Author(s):

Kiran Sharma ◽

D. P. Joshi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Electrical Conduction ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film

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Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1417995 ◽

2002 ◽

Vol 91 (1) ◽

pp. 420 ◽

Author(s):

Jianan Yang ◽

Gerold W. Neudeck ◽

John P. Denton

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Thin Film Silicon

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