Wafer Bonding and Layer Transfer For Thin Film Ferroelectrics

2002 ◽  
Vol 748 ◽  
Author(s):  
Jennifer L. Ruglovsky ◽  
Young-Bae Park ◽  
Cecily A. Ryan ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Single Crystals ◽  
Wafer Bonding ◽  
Crystalline Silicon ◽  
Sacrificial Layer ◽  
Bubble Formation ◽  
Ferroelectric Materials ◽  
Silicon Substrates ◽  
Layer Transfer

ABSTRACTWe report on the layer transfer of thin ferroelectric materials onto silicon substrates. H+ and He+ ion implantation created a buried sacrificial layer in the c-cut BaTiO3 and LiNbO3 single crystals. Bubble formation and thermodynamics of cavity at the bonding interface have been investigated, and single crystal thin film layers were transferred onto crystalline silicon substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting.

Porous Silicon Films for Thin Film Layer Transfer Applications and Wafer Bonding

2019 ◽  
Vol 33 (4) ◽  
pp. 195-206 ◽  
Author(s):  
Monali Joshi ◽  
Song Jun Hu ◽  
Mark S. Goorsky
Keyword(s):  
Thin Film ◽  
Porous Silicon ◽  
Wafer Bonding ◽  
Silicon Films ◽  
Layer Transfer ◽  
Thin Film Layer ◽  
Film Layer

A Comparison of Low Energy BF2 Implantation in Si and Ge Preamorphized Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
Gary A. Ruggles ◽  
Shin-Nam Hong ◽  
Jimmie J. Wortman ◽  
Mehmet Ozturk ◽  
Edward R. Myers ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Low Energy ◽  
Electrical Activation ◽  
Silicon Substrates ◽  
Boron Diffusion ◽  
Junction Depth ◽  
Rapid Thermal Anneal ◽  
Boron Segregation

ABSTRACTLow energy (6 keV) BF2 implantation was carried out using single crystal, Ge-preamorphized, and Si-preamorphized silicon substrates. Implanted substrates were rapid thermal annealed at temperatures from 600°C to 1050'C and boron channeling, diffusion, and activation were studied. Ge and Si preamorphization energies were chosen to produce nearly identical amorphous layer depths as determined by TEM micrographs (approximately 40 nm in both cases). Boron segregation to the end-of-range damage region was observed for 6 keV BF2 implantation into crystalline silicon, although none was detected in preamorphized substrates. Junction depths as shallow as 50 nm were obtained. In this ultra-low energy regime for ion implantation, boron diffusion was found to be as important as boron channeling in determining the junction depth, and thus, preamorphization does not result in a significant reduction in junction depth. However, the formation of junctions shallower than 100 rmu appears to require RTA temperatures below 1000°C which can lead to incomplete activation unless the substrate has been preamorphized. In the case of preamorphized samples, Hall measurements revealed that nearly complete electrical activation can be obtained for preamorphized samples after a 10 second rapid thermal anneal at temperatures as low as 600°C.

Nanothick Layer Transfer of Hydrogen-implanted Wafer Using Polysilicon Sacrificial Layer

2006 ◽  
Vol 921 ◽  
Author(s):  
C. H. Huang ◽  
C. L. Chang ◽  
Y. Y. Yang ◽  
T. Suryasindhu ◽  
W. -C. Liao ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafer ◽  
Wafer Bonding ◽  
Sacrificial Layer ◽  
Silicon Layer ◽  
Bonding Layer ◽  
Transmission Electron ◽  
Nanostructure Material ◽  
Polysilicon Layer ◽  
Material Fabrication

AbstractAn ion implantation-wafer bonding-layer splitting based 2-D nanostructure material fabrication method using polysilicon sacrificial layer for forming nanothick SOI materials without using post-thinning processes is presented in this paper. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step to achieve the hydrogen-rich buried layer which depth from the top surface is less than 100 nm in the as-implanted silicon wafer. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer after wafer bonding and layer splitting steps. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).

Integration of Single-Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

2006 ◽  
Vol 18 (12) ◽  
pp. 1533-1536 ◽  
Author(s):  
Y.-B. Park ◽  
B. Min ◽  
K. J. Vahala ◽  
H. A. Atwater
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Layer Transfer

Improving the Quality of Epitaxial Foils Produced Using a Porous Silicon-based Layer Transfer Process for High-Efficiency Thin-Film Crystalline Silicon Solar Cells

2014 ◽  
Vol 4 (1) ◽  
pp. 70-77 ◽  
Author(s):  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Roberto Martini ◽  
Valerie Depauw ◽  
Kris Van Nieuwenhuysen ◽  
Maarten Debucquoy ◽  
...  
Keyword(s):  
Thin Film ◽  
Porous Silicon ◽  
Transfer Process ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Layer Transfer ◽  
Crystalline Silicon Solar Cells ◽  
Silicon Based

Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding

2010 ◽  
Vol 39 (10) ◽  
pp. 2233-2236 ◽  
Author(s):  
Ki Yeol Byun ◽  
Isabelle Ferain ◽  
Scott Song ◽  
Susan Holl ◽  
Cindy Colinge
Keyword(s):  
Wafer Bonding ◽  
Crystalline Silicon ◽  
Flexible Substrate ◽  
Silicon Layer ◽  
Single Crystalline Silicon ◽  
Layer Transfer ◽  
Single Crystalline
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