Integration of Single-Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

2006 ◽  
Vol 18 (12) ◽  
pp. 1533-1536 ◽  
Author(s):  
Y.-B. Park ◽  
B. Min ◽  
K. J. Vahala ◽  
H. A. Atwater
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Layer Transfer

scholarly journals Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

2004 ◽  
Vol 85 (3) ◽  
pp. 455-457 ◽  
Author(s):  
Young-Bae Park ◽  
Jennifer L. Ruglovsky ◽  
Harry A. Atwater
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Single Crystal ◽  
Layer Transfer ◽  
Microstructure And Properties

Wafer Bonding and Layer Transfer For Thin Film Ferroelectrics

2002 ◽  
Vol 748 ◽  
Author(s):  
Jennifer L. Ruglovsky ◽  
Young-Bae Park ◽  
Cecily A. Ryan ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Single Crystals ◽  
Wafer Bonding ◽  
Crystalline Silicon ◽  
Sacrificial Layer ◽  
Bubble Formation ◽  
Ferroelectric Materials ◽  
Silicon Substrates ◽  
Layer Transfer

ABSTRACTWe report on the layer transfer of thin ferroelectric materials onto silicon substrates. H+ and He+ ion implantation created a buried sacrificial layer in the c-cut BaTiO3 and LiNbO3 single crystals. Bubble formation and thermodynamics of cavity at the bonding interface have been investigated, and single crystal thin film layers were transferred onto crystalline silicon substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Mo-doped, Cr-Doped, and Mo–Cr codoped TiO2 thin-film photocatalysts by comparative sol-gel spin coating and ion implantation

2021 ◽  
Vol 46 (24) ◽  
pp. 12961-12980
Author(s):  
Amanda Chen ◽  
Wen-Fan Chen ◽  
Tina Majidi ◽  
Bernadette Pudadera ◽  
Armand Atanacio ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Spin Coating ◽  
Tio2 Thin Film ◽  
Sol Gel ◽  
Codoped Tio2

scholarly journals Synthesis of a mesoporous titania thin film with a pseudo-single-crystal framework by liquid-phase epitaxial growth, and enhancement of photocatalytic activity

RSC Advances ◽  
2020 ◽  
Vol 10 (67) ◽  
pp. 40658-40662
Author(s):  
Norihiro Suzuki ◽  
Chiaki Terashima ◽  
Kazuya Nakata ◽  
Ken-ichi Katsumata ◽  
Akira Fujishima
Keyword(s):  
Thin Film ◽  
Photocatalytic Activity ◽  
Liquid Phase ◽  
Single Crystal ◽  
Chemical Process ◽  
Anatase Phase ◽  
Mesoporous Titania ◽  
Titania Thin Film ◽  
Liquid Phase Epitaxial Growth ◽  
Pseudo Single Crystal

An anatase-phase mesoporous titania thin film with a pseudo-single-crystal framework was facilely synthesized by an inexpensive chemical process.

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