2-Dimensional Controlled Large Lateral Grain Growth on the Floating Amorphous Silicon Film by Excimer Laser Recrystallization

2003 ◽  
Vol 762 ◽  
Author(s):  
In-Hyuk Song ◽  
Su-Hyuk Kang ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thermal Gradient ◽  
Laser Annealing ◽  
Silicon Film ◽  
Excimer Laser Annealing ◽  
Active Structure ◽  
Current Path ◽  
Laser Recrystallization

AbstractWe have successfully obtained large lateral grains with well-controlled grain boundary. The proposed excimer laser annealing (ELA) method produces 2-dimensionally controlled grain growth because the temperature gradient is induced in two directions. Along the channel direction, the floating active structure produces large thermal gradient due to very low thermal conductivity of the air-gap. Along the perpendicular direction to the channel, the surface tension effect also produces thermal gradient. The proposed ELA method can control the grain boundary perpendicular and parallel to current path with only one laser irradiation.

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Advanced Excimer Laser Annealing of Thin Poly Si Films after Solid Phase Grain Growth

1989 ◽  
Vol 146 ◽  
Author(s):  
Takashi Noguchi ◽  
Kazuhiro Tajima ◽  
Yasushi Morita
Keyword(s):  
Electronic Properties ◽  
Grain Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Liquid Crystal Display ◽  
Silicon Film ◽  
Dendritic Structure ◽  
Large Area ◽  
Excimer Laser Annealing

ABSTRACTThin silicon films with dendritic large grains can be obtained by Si+ or P+ implantation and subsequent low temperature annealing of the silicon film. We tried further exposing the films with an excimer laser after the grain growth. As a result, improvement of electronic properties such as high carrier mobility or low resistivity were obtained. By TEM observation, polycrystalline grains with a dendritic structure did not melt after laser annealing and it was found that the improvement of electronic properties were achieved mainly due to the improvement of crystallinity by U-V(Ultra-Violet) reflectance, ESR(Electron Spin Resonance) analysis and TFT characteristics. We are convinced that this advanced laser pulse annealing method is an ideal RTA process in the near future and is expected to be applicable to ULSI processes for inter connects, high density stacked SRAM and for large area electronics on glass such as a contact line sensor or LCD(Liquid Crystal Display).

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

A New Sample Structure for Position-Controlled Giant-Grain Growth of Silicon using Phase-Modulated Excimer-Laser Annealing

2001 ◽  
Vol 40 (Part 1, No. 7) ◽  
pp. 4466-4469 ◽  
Author(s):  
Satoshi Yoshimoto ◽  
Chang-Ho Oh ◽  
Masakiyo Matsumura
Keyword(s):  
Grain Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Sample Structure

Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5657-5662 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Tomoyuki Nohda ◽  
Yoichirou Aya ◽  
Takashi Kuwahara ◽  
Kenichiro Wakisaka ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Growth ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Films ◽  
Comprehensive Study

Lateral Grain Growth of Poly-Si Films with a Specific Orientation by an Excimer Laser Annealing Method

1993 ◽  
Vol 32 (Part 1, No. 12B) ◽  
pp. 6190-6195 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Shigeru Noguchi ◽  
...  
Keyword(s):  
Grain Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Si Films ◽  
Specific Orientation ◽  
Annealing Method

Artificial Formation of Nucleation Seed in Excimer Laser Recrystallization Of Poly-Si

1999 ◽  
Vol 558 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Kee-Chan Park ◽  
Ji-Hoon Kang ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Laser Recrystallization ◽  
Conventional Laser ◽  
Annealing Method ◽  
Si Thin Film

ABSTARCTExcimer laser annealing method employing artificial nucleation seed is proposed to increase the grain size of polycrystalline silicon(poly-Si). We utilize Si component incorporated in aluminum(Al)-sputtering source for the nucleation seed. Si clusters which are to be used as nucleation seed are successfully formed on the substrate by deposition and etch-back of Si-incorporated Al layer. Irradiation of excimer laser on amorphous silicon(a-Si) film deposited on the substrate prepared by our method results in enlargement of poly-Si grains, compared with conventional laser recrystallization. Poly-Si thin film transistor also shows much improved electrical perfbrmance which directly reflects the quality of poly-Si film recrystallized by our method.

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