Artificial Formation of Nucleation Seed in Excimer Laser Recrystallization Of Poly-Si

1999 ◽  
Vol 558 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Kee-Chan Park ◽  
Ji-Hoon Kang ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Laser Recrystallization ◽  
Conventional Laser ◽  
Annealing Method ◽  
Si Thin Film

ABSTARCTExcimer laser annealing method employing artificial nucleation seed is proposed to increase the grain size of polycrystalline silicon(poly-Si). We utilize Si component incorporated in aluminum(Al)-sputtering source for the nucleation seed. Si clusters which are to be used as nucleation seed are successfully formed on the substrate by deposition and etch-back of Si-incorporated Al layer. Irradiation of excimer laser on amorphous silicon(a-Si) film deposited on the substrate prepared by our method results in enlargement of poly-Si grains, compared with conventional laser recrystallization. Poly-Si thin film transistor also shows much improved electrical perfbrmance which directly reflects the quality of poly-Si film recrystallized by our method.

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3700-3703 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Seiichi Kiyama ◽  
Shigeru Noguchi ◽  
Takashi Kuwahara ◽  
Satoshi Ishida ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Si Thin Film

Observation and Annealing of Incomplete Recrystallized Junction Defects due to the Excimer Laser Beam Diffraction at the Gate Edge in Poly-Si TFT

2003 ◽  
Vol 762 ◽  
Author(s):  
Woo-Jin Nam ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Soo-Jeong Park ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Irradiation Intensity ◽  
Transmission Electron ◽  
Electrode Edge ◽  
Beam Diffraction ◽  
Annealing Method

AbstractIncomplete recrystallized junction defects of self-aligned, excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). TEM observation and simulation result verify that the laser irradiation intensity decreased remarkably at the junction due to diffraction of laser beam at gate electrode edge. We proposed oblique-incidence excimer laser annealing method and successfully eliminated the residual junction defects.

Excimer Laser Recrystallization of Selectively Floating a-Si Active Layer for Large-Grained Poly-Si Film

2001 ◽  
Vol 664 ◽  
Author(s):  
Cheon-Hong Kim ◽  
Juhn-Suk Yoo ◽  
In-Hyuk Song ◽  
Min-Koo Han
Keyword(s):  
Excimer Laser ◽  
Active Layer ◽  
Laser Annealing ◽  
Layer Structure ◽  
Excimer Laser Annealing ◽  
Lateral Direction ◽  
Thermal Insulating ◽  
Laser Recrystallization ◽  
Lateral Temperature ◽  
Annealing Method

ABSTRACTWe report a new excimer laser annealing method by employing selectively floating a-Si active layer structure in order to increase the grain size of poly-Si film. The floating a-Si region blocks the heat conduction into the underlying substrate due to high thermal-insulating property of an air so that the lateral temperature gradient is successfully induced by the proposed simple air-gap structure. Our experimental results show that large grains were grown in the lateral direction from the edge to the center of the floating active region. The large grains exceeding 4 m were successfully obtained with only one laser irradiation.

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

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