Deformation of Small Volumes of Material Studied Using Strained-Layer Superlattice Structures

2003 ◽  
Vol 778 ◽  
Author(s):  
K.M.Y. P'ng ◽  
A.J. Bushby ◽  
D.J. Dunstan
Keyword(s):  
Yield Stress ◽  
Finite Volume ◽  
Internal Stresses ◽  
Strained Layer ◽  
Initial Yield Stress ◽  
Semiconductor Superlattice ◽  
Initial Yield ◽  
Strained Layer Superlattice ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

AbstractMechanical studies of semiconductor superlattices have shown that the onset of plastic deformation under an inhomogeneous stress is a process that takes place simultaneously across a finite volume of the order of a micron across. The ability to incorporate known internal stresses, and to vary the stress and thickness of individual layers in a semiconductor superlattice, is a very powerful tool, opening up new possibilities for investigations that cannot be achieved by varying external stresses on a specimen that is sensibly homogeneous. In this way, from the initial yield stress of single-crystal strained-layer superlattices under indentation, we demonstrated a new criterion, of which the key feature is that it is to be averaged over a finite volume. Here we show that designing samples with individual layers in bands to form low yield-stress material within the structure can give information about the size and position of the initial yield volume.

Mapping of the Initial Volume at the Onset of Plasticity in Nanoindentation

2007 ◽  
Vol 1049 ◽  
Author(s):  
Tingting Zhu ◽  
K.M.Y. P'ng ◽  
M. Hopkinson ◽  
A.J. Bushby ◽  
D.J. Dunstan
Keyword(s):  
Yield Stress ◽  
Finite Volume ◽  
Contact Radius ◽  
Small Scale ◽  
Internal Stresses ◽  
Semiconductor Superlattice ◽  
External Stresses ◽  
Different Depths ◽  
Superlattice Structures ◽  
Highly Strained

AbstractUnderstanding the finite volume throughout which plastic deformation begins is necessary to understand the mechanics of small-scale deformation. In indentation using spherical indenters, conventional yield criteria predict that yield starts at a point on the axis and at a depth of half the contact radius. However, Jayaweera et al (Proc. Roy. Soc. 2003)[4] concluded that yield occurs over a finite volume at least 100 nm thick. Semiconductor superlattice structures, in which the stress and thickness of individual layers can be varied and in which known internal stresses can be incorporated, open up new possibilities for investigation that cannot be achieved by varying external stresses on a homogenous specimen. We have designed samples with bands of highly strained InGaAs superlattice, which are essentially bands of low yield-stress material devoid of other metallurgical artifacts. These bands are placed at different depths in a series of samples. Spherical indenters with a range of radii were used to determine the elastic-plastic transition. The stress field from different sized indenters interacts with the low yield-stress material at different depths below the surface to map out the size of the initial yield volume.

A Modified Peric Model for Al-Mg Alloy Sheet with Rate-Independent Initial Yield Stress at Warm Temperatures

2019 ◽  
Vol 287 ◽  
pp. 3-7
Author(s):  
Yong Zhang ◽  
Qing Zhang ◽  
Yuan Tao Sun ◽  
Xian Rong Qin
Keyword(s):  
Flow Stress ◽  
Plastic Strain ◽  
Strain Rate ◽  
Yield Stress ◽  
Constitutive Models ◽  
Mg Alloy ◽  
Initial Yield Stress ◽  
Initial Yield ◽  
Rate Dependent ◽  
Dependent Flow

The constitutive modeling of aluminum alloy under warm forming conditions generally considers the influence of temperature and strain rate. It has been shown by published flow stress curves of Al-Mg alloy that there is nearly no effect of strain rate on initial yield stress at various temperatures. However, most constitutive models ignored this phenomenon and may lead to inaccurate description. In order to capture the rate-independent initial yield stress, Peric model is modified via introducing plastic strain to multiply the strain rate, for eliminating the effect of strain rate when the plastic strain is zero. Other constitutive models including the Wagoner, modified Hockett–Sherby and Peric are also considered and compared. The results show that the modified Peric model could not only describe the temperature-and rate-dependent flow stress, but also capture the rate-independent initial yield stress, while the Wagoner, modified Hockett–Sherby and Peric model can only describe the temperature-and rate-dependent flow stress. Moreover, the modified Peric model could obtain proper static yield stress more naturally, and this property may have potential applications in rate-dependent simulations.

On the Existence of Multiple Equilibrium States in Strained-Layer Superlattices

1987 ◽  
Vol 103 ◽  
Author(s):  
William C. Johnson
Keyword(s):  
Free Energy ◽  
Equilibrium State ◽  
Stable Equilibrium ◽  
Multiple Equilibrium ◽  
Equilibrium Thermodynamic ◽  
Relative Thickness ◽  
Two Phase ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTUsing recent results from the thermodynamics of stressed solids, two-phase coexistence in a simple binary strained-layer superlattice is examined. We show that for a given temperature and overall composition of the superlattice, there can exist more than one linearly stable, equilibrium thermodynamic state. That is, there may exist several combinations of relative thickness of the phases and corresponding phase compositions that minimize the free energy of the system. The equilibrium state observed experimentally can, therefore, be influenced by the processing path.

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

scholarly journals The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition

1993 ◽  
Vol 325 ◽  
Author(s):  
R. M. Biefeld ◽  
K. C. Baucom ◽  
S. R. Kurtz ◽  
D. M. Follstaedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermodynamic Model ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Metal Organic ◽  
Strained Layer Superlattices ◽  
Organic Chemical Vapor Deposition

AbstractWe have grown InAsl-xSbx/Inl-yGayAs strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at a temperature of 475 °C, at pressures of 200 to 660 torr and growth rates of 3 - 5 A/s and layer thicknesses ranging from 55 to 152 Å. The composition of the InAsSb ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Diodes have been prepared using Zn as the p-type dopant and undoped SLS as the n-type material. The diode was found to emit at 3.56 μm. These layers have been characterized by optical microscopy, SIMS, x-ray diffraction, and transmission electron diffraction. The optical properties of these SLS's were determined by infrared photoluminescence and absorption measurements.

Raman Study of Strain and Confinement Effects in Si/Ge Strained Layer Superlattices Under Hydrostatic Pressure

1991 ◽  
Vol 220 ◽  
Author(s):  
Zhifeng Sui ◽  
Irving P. Herman ◽  
Joze Bevk
Keyword(s):  
Hydrostatic Pressure ◽  
Raman Scattering ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Optical Phonons ◽  
Biaxial Strain ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Raman Study ◽  
Strained Layer Superlattices

ABSTRACTThe effects of strain and confinement on optical phonons in a Si12Ge4 strained layer superlattice grown by MBE on c-Si (001) were studied as a function of hydrostatic pressure (T = 295 K) using Raman scattering. The change of phonon frequency with pressure, dω/dP, for the principal quasi-confined LO mode in the Ge layers is found to be significantly smaller than that for bulk crystalline Ge because the magnitude of biaxial strain decreases in the Ge layers with added pressure and because the Grüneisen parameter of the confined mode is smaller than that of the Γ-point optical phonon. More generally, it is noted that the magnitude of biaxial strain in many strained layer superlattices initially decreases with the application of hydrostatic pressure, making the structures more stable.

Optical Absorption Probability for the Zone-Folding Induced Quasi-Direct Gap in Ge(x)Si(1−x)/Si Strained Layer Superlattices

1985 ◽  
Vol 56 ◽  
Author(s):  
S. A. Jackson ◽  
R. People
Keyword(s):  
Transition Probability ◽  
Optical Devices ◽  
Optical Transitions ◽  
Absorption Probability ◽  
Strained Layer ◽  
Optical Gap ◽  
Strained Layer Superlattice ◽  
Indirect Band Gap ◽  
Strained Layer Superlattices ◽  
Zone Folding

AbstractUsing a realistic zone-folding scheme for a Ge(x)Si(1−x)/Si strained layer superlattice having a Si-like conduction band structure (i.e ≲85% Ge) we calculate the transition probability for the zone-folding induced direct optical gap and compare it with the indirect band gap absorption probability. The results suggest that such zone-folding induced direct optical transitions are promising for optical devices made from Ge(x)Si(1−x)/Si strained layer superlattices and like structures, provided they are fabricated in such a way that the appropriate zone-folding occurs.

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