Low-Temperature Synthesis and Dielectric Properties of Single-Phase Lead Zirconate Titanate Thin Film with a Nano Particle Seeding Technique

2003 ◽  
Vol 784 ◽  
Author(s):  
Tomokazu Tanase ◽  
Yoshio Kobayashi ◽  
Takao Miwa ◽  
Mikio Konno
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Lead Zirconate Titanate ◽  
Single Phase ◽  
Dissipation Factor ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTThe low temperature synthetic method, which combines chemical solution deposition and nm-seeding technique, was applied to the fabrication of lead zirconate titanate (PZT) thin films. Nano-crystallines of barium strontium titanate (BST) particles were prepared by the hydrolysis reaction of the complex alkoxides. PZT precursor solutions containing the BST particles were spin-coated on Pt/Ti/SiO2/Si substrates to film thickness of 500 − 800 nm at particle concentrations of 0–25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400 °C in unseeded PZT films, and crystallized PZT into perovskite structures at 420 °C, which was more than 100 °C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450 °C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1×10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.

Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Spontaneous Polarization ◽  
Chemical Solution Deposition ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTInfluences of the B-site substitution using Dy3+ ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy3+-substituted PZT films with nominal chemical compositions of Pb1.00Dyx (Zr0.40Ti0.60)1-(3x/4)O3 (x = 0 ∼ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy3+-substitution with x = 0.02. Spontaneous polarization (Ps) of Dy3+-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (Psat) value of the epitaxially-grown (111)PZT film on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si to be 84 μC/cm2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm2). We concluded that the enhancement of Ps value could be achieved by the Dy3+-substitution that promoted the crystal anisotropy of PZT lattice.

Crystal Phase and Orientation Dependence of Electro-Optic Effect in Epitaxial PLZT an PZT Films

2007 ◽  
Vol 350 ◽  
pp. 99-102
Author(s):  
Keisuke Satoh ◽  
Akio Sugama ◽  
Masatoshi Ishii ◽  
Masao Kondo ◽  
Kazuaki Kurihara
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Epitaxial Films ◽  
Orientation Dependence ◽  
Pockels Effect ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Electro Optic ◽  
Pzt Films ◽  
Extraordinary Refractive Index

Lanthanum-modified lead zirconate titanate and lead zirconate titanate epitaxial films with (100) and (111) orientations were grown respectively on (100) and (111) niobium, lending conductivity to strontium titanate through chemical solution deposition. This study investigated changes in the ordinary and extraordinary refractive index no and ne induced in these films by an electric field using the prism-coupling method. In the (100) epitaxial PZT 30/70 film, anisotropic electro-optic effects arise from the Pockels effect. The isotropic electro-optic effect, which is no = ne , was achieved on (100) epitaxial PLZT 8/65/35 and PZT 70/30 films.

scholarly journals Low-Temperature Synthesis of Single-Phase Lead Zirconate Titanate Thin Film with a nm-Seeding Technique.

2002 ◽  
Vol 110 (1286) ◽  
pp. 911-915 ◽  
Author(s):  
Tomokazu TANASE ◽  
Ayako NISHIKATA ◽  
Yusuke IIZUKA ◽  
Yoshio KOBAYASHI ◽  
Mikio KONNO ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Lead Zirconate Titanate ◽  
Single Phase ◽  
Lead Zirconate ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Phase Lead ◽  
Zirconate Titanate ◽  
Titanate Thin Film

Fabrication of Lead Zirconate Titanate Thick Film Disks for Micro Transducer Devices

2003 ◽  
Vol 785 ◽  
Author(s):  
Takashi Iijima ◽  
Sachiko Ito ◽  
Hirofumi Matsuda
Keyword(s):  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Relative Dielectric Constant ◽  
Dissipation Factor ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Displacement Curve ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Preparation Techniques

ABSTRACTA combination of the preparation techniques for the ferroelectric films and the micro machining of Si is considered to be an effective way to fabricate microelectromechanical systems (MEMS), such as piezoelectric micro-transducer devices for the electrical and medical fields. In this study, 10-μm-thick disk shape lead zirconate titanate (PZT) thick films were successfully fabricated using a chemical solution deposition (CSD) process. Pt top electrode and PZT layer were etched by reactive ion etching (RIE) process, and 100 to 500-μm-diameter PZT micro disks were fabricated on Pt/SiO2/Si substrate. The relative dielectric constant, dissipation factor, remnant polarization and coercive field were εr = 1130, tanδ = 0.02, Pr = 14 μC/cm2 and Ec = 25 kV/cm, respectively. This means that the ferroelectric and dielectric properties of the PZT micro disks were comparable with that of the bulk PZT ceramics. The PZT micro disk showed the butterfly-shaped displacement curve, related with piezoelectric response, in the case of bipolar measurement. The piezoelectric constant of the PZT disks poled at 80Vfor 10 min was estimated to be AFM d33 = 221 pm/V. A resonance frequency of the radial oscillation was evaluated to apply for micro transducer devices.

Influence of structure and chemistry on piezoelectric properties of lead zirconate titanate in a microelectromechanical systems power generation application

2003 ◽  
Vol 18 (9) ◽  
pp. 2079-2086 ◽  
Author(s):  
L. M. R. Eakins ◽  
B. W. Olson ◽  
C. D. Richards ◽  
R. F. Richards ◽  
D. F. Bahr
Keyword(s):  
Crystal Structure ◽  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Pzt Films ◽  
Pt Films

Lead zirconate titanate (PZT) films between 1 and 3 μm thick were grown using solution deposition techniques to study the effects of crystal structure and orientation on the direct piezoelectric output of these films on platinized Si membranes. By varying the chemistry of the film from Zr-rich to Ti-rich, the {100}/(111) relative intensity increased for films grown on randomly oriented Pt films. The 40:60 PZT had a tetragonal crystal structure and produced greater electrical output at a given strain than the rhombohedral film (Zr:Ti concentrations less than 50:50), while having a similar e31 constant, between 4.8 and 6.3 C/m2. Orientation and voltage output at a given strain were not strongly influenced by thickness in the ranges investigated. Defects in internal PZT/PZT crystallization interfaces were identified and include porosity on the order of tens of nm, with a corresponding depletion in Pb and accumulation of O at these interfaces. The {100} texture of rhombohedral films deposited upon (111) textured Pt films is significantly greater than the {100} texture of tetragonal films, which show both a {100} and {111} orientation on the same Pt film.

Orientation control of sol-gel-derived lead zirconate titanate film by addition of polyvinylpyrrolidone

2005 ◽  
Vol 20 (4) ◽  
pp. 882-888 ◽  
Author(s):  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Jong-Jin Choi ◽  
Hyoun-Ee Kim
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Organic Residues ◽  
Si Substrates ◽  
Pzt Film ◽  
Oriented Film ◽  
Zirconate Titanate ◽  
Nucleation Sites ◽  
Pzt Films

Highly (100)- and (111)-oriented lead zirconate titanate (PZT) films with a thickness of 350 nm were deposited on platinized Si substrates through a single spinning of a PZT sol containing polyvinylpyrrolidone (PVP) as an additive. The crystallographic orientation of the film was strongly influenced by pyrolysis conditions after spin coating. When the spin-coated sol was pyrolyzed at temperatures above 320 °C for relatively long periods of time (>5 min), (111)-oriented film was formed after annealing at 700 °C for 10 min. On the other hand, when the same sol was pyrolyzed at 320 °C for short periods of time (<5 min), the film was strongly oriented to the (100) direction after annealing. Organic residues derived from PVP decomposition acted as nucleation sites for the (100) oriented grains during annealing after the pyrolysis. The effective d33 of the (100)-oriented PZT film (100 pC/N) was much higher than that of the (111)-oriented film (62 pC/N) with the same thickness.

Bottom Electrode Effects in Controlling Orientation of Lead Zirconate Titanate Films Deposited by Chemical Solution Deposition

1999 ◽  
Vol 596 ◽  
Author(s):  
Deborah A. Neumayer ◽  
Katherine L. Saenger ◽  
Robert B. Laibowitz ◽  
Thomas M. Shaw ◽  
Rebecca Mih ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Fatigue Endurance ◽  
Seed Layers

AbstractThe microstructure and electrical properties of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) films prepared by chemical solution deposition (CSD) with and without lead titanate (PT) seed layers were examined as a function of Ir/lr oxide electrode type. The novel PZT CSD solution was prepared from a mixture of zirconium and titanium butoxyethoxides and lead ethylhexanoate dissolved in butoxyethanol. The use of excess-lead (PbxsTi) and stoichiometric PT seed layers was found to promote PZT(111) orientation on Ir but not on Ir oxide. Ir substrate thickness was observed to influence orientation of PZT deposited on stoichiometric PT with greater PZT(111) texturing on thinner Ir(111) substrates. PZT with greater PZT(111) texturing tended to have greater remanent polarization (2Pr, μC/cm2). PZT deposited on stoichiometric PT seed layers on Ir(111) was of higher film quality than PZT deposited on PbxsTi seed layers on Ir(111). The PZT films deposited on stoichiometric PT on Ir(111) had enhanced PZT(111) orientation, a reduced pyrochlore content, and tended to saturate at lower coercive fields, have higher remanent polarization, squarer hysteresis loops with less tilt and greater fatigue endurance. The use of iridium oxide top electrode was demonstrated to significantly improve fatigue endurance compared to use of an iridium top electrode.

Effect of Diameter on Longitudinal Displacement in Disk Shape 10-μm-thick Lead Zirconate Titanate Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Takashi Iijima ◽  
Satoko Osone ◽  
Yoshiro Shimojo ◽  
Hirotake Okino ◽  
Takashi Yamamoto
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Longitudinal Displacement ◽  
Disk Diameter ◽  
Poling Process ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Before And After ◽  
Thick Lead

AbstractMicro-machined piezoelectric film devices are usually fabricated onto substrates, so that the displacement response of the film is clamped with the substrate. To investigate the longitudinal displacement behavior of 10-μm-thick lead zirconate titanate (PZT) films deposited onto Si substrates, disk shape structures with diameters of 20 to 80-μm were fabricated by an reactive ion etching (RIE) process. The polarization-field (P-E) hysteresis curves did not show a remarkable difference with decreasing the PZT disk diameter. On the other hand, unipolar driven longitudinal displacement increased, and the amount of the displacement was saturated at a diameter of 30 and 20 μm. The AFM measured longitudinal piezoelectric constants, AFM d33, were estimated in the case of before poling and after poling at 100V for 10 min. The AFM d33 for the before and after poling process were 65 and 94 pm/V for 80-μm-diameter film disk, and 153 and 315 pm/V for 20-μm-diameter film disk, respectively. The value of poled AFM d33 for 20-μm-diameter film disk was comparable to bulk PZT ceramics. These results suggest that the decrease of the disk diameter reduces the Si substrate bending related with the clamping effect between the film and substrate, and facilitates domain reorientation in the poling process. It seems that the actual piezoelectric constant of films can be estimated from the longitudinal displacement when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, shows d/t < 3 for 10-μm-thick PZT films.

Sign in / Sign up

Export Citation Format

Share Document