Fabrication of Lead Zirconate Titanate Thick Film Disks for Micro Transducer Devices

2003 ◽  
Vol 785 ◽  
Author(s):  
Takashi Iijima ◽  
Sachiko Ito ◽  
Hirofumi Matsuda
Keyword(s):  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Relative Dielectric Constant ◽  
Dissipation Factor ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Displacement Curve ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Preparation Techniques

ABSTRACTA combination of the preparation techniques for the ferroelectric films and the micro machining of Si is considered to be an effective way to fabricate microelectromechanical systems (MEMS), such as piezoelectric micro-transducer devices for the electrical and medical fields. In this study, 10-μm-thick disk shape lead zirconate titanate (PZT) thick films were successfully fabricated using a chemical solution deposition (CSD) process. Pt top electrode and PZT layer were etched by reactive ion etching (RIE) process, and 100 to 500-μm-diameter PZT micro disks were fabricated on Pt/SiO2/Si substrate. The relative dielectric constant, dissipation factor, remnant polarization and coercive field were εr = 1130, tanδ = 0.02, Pr = 14 μC/cm2 and Ec = 25 kV/cm, respectively. This means that the ferroelectric and dielectric properties of the PZT micro disks were comparable with that of the bulk PZT ceramics. The PZT micro disk showed the butterfly-shaped displacement curve, related with piezoelectric response, in the case of bipolar measurement. The piezoelectric constant of the PZT disks poled at 80Vfor 10 min was estimated to be AFM d33 = 221 pm/V. A resonance frequency of the radial oscillation was evaluated to apply for micro transducer devices.

Low-Temperature Synthesis and Dielectric Properties of Single-Phase Lead Zirconate Titanate Thin Film with a Nano Particle Seeding Technique

2003 ◽  
Vol 784 ◽  
Author(s):  
Tomokazu Tanase ◽  
Yoshio Kobayashi ◽  
Takao Miwa ◽  
Mikio Konno
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Lead Zirconate Titanate ◽  
Single Phase ◽  
Dissipation Factor ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTThe low temperature synthetic method, which combines chemical solution deposition and nm-seeding technique, was applied to the fabrication of lead zirconate titanate (PZT) thin films. Nano-crystallines of barium strontium titanate (BST) particles were prepared by the hydrolysis reaction of the complex alkoxides. PZT precursor solutions containing the BST particles were spin-coated on Pt/Ti/SiO2/Si substrates to film thickness of 500 − 800 nm at particle concentrations of 0–25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400 °C in unseeded PZT films, and crystallized PZT into perovskite structures at 420 °C, which was more than 100 °C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450 °C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1×10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.

Influence of structure and chemistry on piezoelectric properties of lead zirconate titanate in a microelectromechanical systems power generation application

2003 ◽  
Vol 18 (9) ◽  
pp. 2079-2086 ◽  
Author(s):  
L. M. R. Eakins ◽  
B. W. Olson ◽  
C. D. Richards ◽  
R. F. Richards ◽  
D. F. Bahr
Keyword(s):  
Crystal Structure ◽  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Zirconate Titanate ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Pzt Films ◽  
Pt Films

Lead zirconate titanate (PZT) films between 1 and 3 μm thick were grown using solution deposition techniques to study the effects of crystal structure and orientation on the direct piezoelectric output of these films on platinized Si membranes. By varying the chemistry of the film from Zr-rich to Ti-rich, the {100}/(111) relative intensity increased for films grown on randomly oriented Pt films. The 40:60 PZT had a tetragonal crystal structure and produced greater electrical output at a given strain than the rhombohedral film (Zr:Ti concentrations less than 50:50), while having a similar e31 constant, between 4.8 and 6.3 C/m2. Orientation and voltage output at a given strain were not strongly influenced by thickness in the ranges investigated. Defects in internal PZT/PZT crystallization interfaces were identified and include porosity on the order of tens of nm, with a corresponding depletion in Pb and accumulation of O at these interfaces. The {100} texture of rhombohedral films deposited upon (111) textured Pt films is significantly greater than the {100} texture of tetragonal films, which show both a {100} and {111} orientation on the same Pt film.

A Study of Antiferromagnetic-Pinned Multiferroic Composites Nano Read Head

2016 ◽  
Author(s):  
Salinee Choowitsakunlert ◽  
Rardchawadee Silapunt ◽  
Hideki Yokoi
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Potential Candidate ◽  
Zirconate Titanate ◽  
Read Head ◽  
Maximum Electric Field

This paper presents a study of the effect of antiferromagnetic (AFM) integration on the nano AFM-pinned multiferroic (MF) composites structure. The nano MF composites structure is a potential candidate for a future magnetic read head. The simulation of the AFM/ferromagnetic (FM) bilayers characteristics and the evaluation of the magnetoelectric (ME) effect induced in the 1-dimensional (1D) L-T mode model of AFM-pinned structure of AFM/FM/Ferroelectric (FE)/FM/AFM are performed. FM, FE, and two types of AFM materials are Terfenol-D, lead zirconate titanate (PZT), and PtMn and Cr2O3, respectively. The magnetoelectric (ME) effect is investigated using the 1D standard square law. Magnetic-field induced strain in the FM layer, piezoelectric response of the PZT layer, and the ME coefficient are determined. Specifically, the influence of AFM on the MF composites structure for various AFM thicknesses is of interest. It is found that the maximum electric field and potential across the PZT layer are achieved at 2.7 nm thick of PtMn. The result is well agreed by associated magnetic field-induced strain and ME coefficient.

Wet-Etch Patterning of Lead Zirconate Titanate (PZT) Thick Films for Microelectromechanical Systems (MEMS) Applications

2000 ◽  
Vol 657 ◽  
Author(s):  
L.-P. Wang ◽  
R. Wolf ◽  
Q. Zhou ◽  
S. Trolier-McKinstry ◽  
R. J. Davis
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Microelectromechanical Systems ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Metal Fluoride ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
High Etch Rate ◽  
Wet Etch

ABSTRACTLead zirconate titanate (PZT) films are very attractive for microelectromechanical systems (MEMS) applications because of their high piezoelectric coefficients and good electromechanical coupling. In this work, wet-etch patterning of sol-gel PZT films for MEMS applications, typically with film thicknesses ranging from 2 to 10 microns, was studied. A two- step wet-etch process was developed. In the first step, 10:1 buffered HF is used to remove the majority of the film at room temperature. Then a solution of 2HCl:H2O at 45°C is used to remove metal-fluoride residues remaining from the first step. This enabled successful patterning of PZT films up to 8 microns thick. A high etch rate (0.13μm/min), high selectivity with respect to photoresist, and limited undercutting (2:1 lateral:thickness) were obtained. The processed PZT films have a relative permittivity of 1000, dielectric loss of 1.6%, remanent polarization (Pr) of 24μC/cm2, and coercive field (Ec) of 42.1kV/cm, all similar to those of unpatterned films of the same thickness.

Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Spontaneous Polarization ◽  
Chemical Solution Deposition ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTInfluences of the B-site substitution using Dy3+ ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy3+-substituted PZT films with nominal chemical compositions of Pb1.00Dyx (Zr0.40Ti0.60)1-(3x/4)O3 (x = 0 ∼ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy3+-substitution with x = 0.02. Spontaneous polarization (Ps) of Dy3+-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (Psat) value of the epitaxially-grown (111)PZT film on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si to be 84 μC/cm2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm2). We concluded that the enhancement of Ps value could be achieved by the Dy3+-substitution that promoted the crystal anisotropy of PZT lattice.

Mechanical energy harvesting using polyurethane/lead zirconate titanate composites

2017 ◽  
Vol 52 (9) ◽  
pp. 1171-1182 ◽  
Author(s):  
Abdelkader Rjafallah ◽  
Abdelowahed Hajjaji ◽  
Fouad Belhora ◽  
Daniel Guyomar ◽  
Laurence Seveyrat ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Lead Zirconate Titanate ◽  
Microelectromechanical Systems ◽  
Volume Fraction ◽  
Mechanical Energy ◽  
Mechanical Strain ◽  
Lead Zirconate ◽  
Inorganic Materials ◽  
Zirconate Titanate ◽  
Electromechanical Transduction

The microelectromechanical systems invade gradually the market with applications in many sectors of activity. Developing these micro-systems allows deploying wireless sensor networks that are useful to collect, process and transmit information from their environments without human intervention. In order to keep these micro-devices energetically autonomous without using batteries because they have a limited lifespan, an energy harvesting from ambient vibrations using electrostrictive polymers can be used. These polymers present best features against inorganic materials, as flexibility and low cost. The aims of this paper are manifold. First of all, we made elaboration of the polyurethane/lead zirconate titanate films of 100 µm thickness using a lead zirconate titanate–volume fraction of [Formula: see text]%. Therefore, we did an observation of the lead zirconate titanate grains dispersion and the electrical characterization of the polyurethane–50 vol% lead zirconate titanate composites. Finally, a detailed study of the electromechanical transduction, for the polyurethane–50 vol% lead zirconate titanate unpolarized and polarized composites sustained to the sinusoidal mechanical strain with amplitude of 1.5% and at very low frequencies ( f = 2 [Hz] and f = 4 [Hz]) and static electric field ( Edc = 10 [ V/µm]) or without it ( Edc = 0 [ V/µm]) has been presented.

scholarly journals Growth of {100}-oriented lead zirconate titanate thin films mediated by a safe solvent

2021 ◽  
Vol 9 (1) ◽  
pp. 281-287
Author(s):  
Nicolas Godard ◽  
Patrick Grysan ◽  
Emmanuel Defay ◽  
Sebastjan Glinšek
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Chemical Solution Deposition ◽  
Lead Zirconate ◽  
Chemical Solution ◽  
Safe Alternative ◽  
Solution Deposition ◽  
Zirconate Titanate

1-Methoxy-2-propanol was found to be a promising safe alternative to carcinogenic and teratogenic 2-methoxyethanol as solvent for chemical solution deposition of {100}-oriented lead zirconate titanate thin films on platinized silicon. 

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