Effect of Diameter on Longitudinal Displacement in Disk Shape 10-μm-thick Lead Zirconate Titanate Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Takashi Iijima ◽  
Satoko Osone ◽  
Yoshiro Shimojo ◽  
Hirotake Okino ◽  
Takashi Yamamoto
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Longitudinal Displacement ◽  
Disk Diameter ◽  
Poling Process ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Before And After ◽  
Thick Lead

AbstractMicro-machined piezoelectric film devices are usually fabricated onto substrates, so that the displacement response of the film is clamped with the substrate. To investigate the longitudinal displacement behavior of 10-μm-thick lead zirconate titanate (PZT) films deposited onto Si substrates, disk shape structures with diameters of 20 to 80-μm were fabricated by an reactive ion etching (RIE) process. The polarization-field (P-E) hysteresis curves did not show a remarkable difference with decreasing the PZT disk diameter. On the other hand, unipolar driven longitudinal displacement increased, and the amount of the displacement was saturated at a diameter of 30 and 20 μm. The AFM measured longitudinal piezoelectric constants, AFM d33, were estimated in the case of before poling and after poling at 100V for 10 min. The AFM d33 for the before and after poling process were 65 and 94 pm/V for 80-μm-diameter film disk, and 153 and 315 pm/V for 20-μm-diameter film disk, respectively. The value of poled AFM d33 for 20-μm-diameter film disk was comparable to bulk PZT ceramics. These results suggest that the decrease of the disk diameter reduces the Si substrate bending related with the clamping effect between the film and substrate, and facilitates domain reorientation in the poling process. It seems that the actual piezoelectric constant of films can be estimated from the longitudinal displacement when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, shows d/t < 3 for 10-μm-thick PZT films.

Mist Deposition of Micron-Thick Lead Zirconate Titanate Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Mark D. Losego ◽  
Susan Trolier-McKinstry
Keyword(s):  
Lead Zirconate Titanate ◽  
Chemical Deposition ◽  
Lead Zirconate ◽  
Limiting Factors ◽  
Process Time ◽  
Silicon Substrates ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Chamber Temperature ◽  
Thick Lead

ABSTRACTA majority of the work published on liquid source misted chemical deposition (LSMCD) has focused on the fabrication of thin ferroelectric films for random access memory (RAM) applications. However, the ability of LSMCD to combine the characteristically good stoichiometry control of a chemical solution deposition process with good film conformality, makes this a desirable technique for other applications, including microactuators and integrated passive components. For these applications, though, LSMCD is limited by its low throughput. This paper describes the feasibility of depositing micron-thick lead zirconate titanate (PZT) films using the LSMCD tool. PZT films of 52/48 composition were deposited on both platinized silicon and platinized alumina substrates. The chamber temperature and the delivery geometry of the LSMCD tool were identified as limiting factors in the rate at which micron-thick samples can be prepared. By switching to a focused nozzle delivery geometry and increasing the chamber temperature from room temperature to 60°C, the total process time for 1 μm thick films can be reduced from 480 min to 90 min. Polarization hysteresis measurements indicated a 75% higher remanent polarization for PZT films deposited on platinized alumina substrates (35 μC/cm2) compared to those deposed on platinized silicon substrates (20 μC/cm2). The polarization loop for the silicon substrate sample was also tilted. These observations are evidence of higher tensile stresses in the PZT films deposited on silicon substrates due to a larger mismatch in the thermal expansion coefficients of the film and the substrate.

Low-Temperature Synthesis and Dielectric Properties of Single-Phase Lead Zirconate Titanate Thin Film with a Nano Particle Seeding Technique

2003 ◽  
Vol 784 ◽  
Author(s):  
Tomokazu Tanase ◽  
Yoshio Kobayashi ◽  
Takao Miwa ◽  
Mikio Konno
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Lead Zirconate Titanate ◽  
Single Phase ◽  
Dissipation Factor ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTThe low temperature synthetic method, which combines chemical solution deposition and nm-seeding technique, was applied to the fabrication of lead zirconate titanate (PZT) thin films. Nano-crystallines of barium strontium titanate (BST) particles were prepared by the hydrolysis reaction of the complex alkoxides. PZT precursor solutions containing the BST particles were spin-coated on Pt/Ti/SiO2/Si substrates to film thickness of 500 − 800 nm at particle concentrations of 0–25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400 °C in unseeded PZT films, and crystallized PZT into perovskite structures at 420 °C, which was more than 100 °C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450 °C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1×10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.

Lead Zirconate Titanate Films Produced by Pulsed Laser Deposition

1990 ◽  
Vol 200 ◽  
Author(s):  
K. L. Saenger ◽  
R. A. Roy ◽  
K. F. Etzold ◽  
J. J. Cuomo
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Pulsed Laser ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Before And After

ABSTRACTThe synthesis of ferroelectric lead zirconate titanate (PZT) films by pulsed laser deposition at 248 nm is described. This study has focused on producing thin (≲ 0.6μm) PZT films on bare and platinum coated MgO < 100 > substrates. Deposition was in an oxygen gas ambient (30 mTorr) at temperatures typically ∼ 525 °C. Rutherford Backscattering Spectroscopy (RBS) was used to evaluate film composition. Film lead content was found to decrease both with increasing laser fluence, and increasing substrate temperature. Film microstructure was evaluated by x-ray diffraction. Electrical measurements were made on the films before and after annealing to determine the dielectric constant and polarization. Properties after annealing were substantially improved, with dielectric permittivity values comparable to bulk PZT.

Orientation control of sol-gel-derived lead zirconate titanate film by addition of polyvinylpyrrolidone

2005 ◽  
Vol 20 (4) ◽  
pp. 882-888 ◽  
Author(s):  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Jong-Jin Choi ◽  
Hyoun-Ee Kim
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Organic Residues ◽  
Si Substrates ◽  
Pzt Film ◽  
Oriented Film ◽  
Zirconate Titanate ◽  
Nucleation Sites ◽  
Pzt Films

Highly (100)- and (111)-oriented lead zirconate titanate (PZT) films with a thickness of 350 nm were deposited on platinized Si substrates through a single spinning of a PZT sol containing polyvinylpyrrolidone (PVP) as an additive. The crystallographic orientation of the film was strongly influenced by pyrolysis conditions after spin coating. When the spin-coated sol was pyrolyzed at temperatures above 320 °C for relatively long periods of time (>5 min), (111)-oriented film was formed after annealing at 700 °C for 10 min. On the other hand, when the same sol was pyrolyzed at 320 °C for short periods of time (<5 min), the film was strongly oriented to the (100) direction after annealing. Organic residues derived from PVP decomposition acted as nucleation sites for the (100) oriented grains during annealing after the pyrolysis. The effective d33 of the (100)-oriented PZT film (100 pC/N) was much higher than that of the (111)-oriented film (62 pC/N) with the same thickness.

Piezoelectric Response of Lanthanum Doped Lead Zirconate Titanate Films for Micro Actuators Application

2008 ◽  
Vol 1129 ◽  
Author(s):  
Takashi Iijima ◽  
Bong-Yeon Lee ◽  
Seiji Fukuyama
Keyword(s):  
Lead Zirconate Titanate ◽  
Deposition Process ◽  
Lead Zirconate ◽  
Test System ◽  
Piezoelectric Response ◽  
Longitudinal Displacement ◽  
Hysteresis Curves ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
La Substitution

AbstractLa doped lead zirconate titanate (PLZT) films are prepared using a chemical solution deposition process. The effect of La substitution on the piezoelectric response was investigated to clear the possibility of the micro actuator application for the PLZT films. Nominal compositions of the 10% Pb excess PLZT precursor solutions were controlled like La/Zr/Ti= 0/65/35, 3/65/35, 6/65/35, and 9/65/35. These precursor solutions were deposited on the Ir/Ti/SiO2/Si substrates, and the thickness of the PLZT films was 2μm. 10 to 20- μm- diameter Pt top electrodes are formed with a sputtering and a photolithography process. The polarization- field (P-E) hysteresis curves and the longitudinal displacement curves were measured with a twin beam laser interferometer connected with a ferroelectric test system. With increasing La substitution amount, the P-E hysteresis curves became slim shape, and remnant polarization (Pr) decreased. The hysteresis of the piezoelectric longitudinal displacement curves also decreased with increasing La substitution amount. The amount of the displacement under unipolar electric field showed a peak at La/Zr/Ti= 3/65/35. The calculated effective longitudinal piezoelectric constant (d33eff) is 129.2 pm/V at 3/65/35. This amount was relatively higher than that of PZT films at morphotropic phase boundary (MPB: 0/53/47) composition prepared the same film preparation process.

Evaluation of Longitudinal Displacement for Lead Zirconate Titanate Films

2002 ◽  
Vol 41 (Part 1, No. 11B) ◽  
pp. 6735-6738 ◽  
Author(s):  
Takashi Iijima ◽  
Sachiko Ito ◽  
Hirofumi Matsuda
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Longitudinal Displacement ◽  
Zirconate Titanate

Micromachined ultrasonic transducers based on lead zirconate titanate (PZT) films

2012 ◽  
Vol 19 (2) ◽  
pp. 211-218 ◽  
Author(s):  
Junhong Li ◽  
Chenghao Wang ◽  
Jun Ma ◽  
Mengwei Liu
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Ultrasonic Transducers ◽  
Zirconate Titanate ◽  
Pzt Films
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