Optical properties of InGaAs QDs grown in a GaAs matrix by MOCVD, emitting at 1300 nm at room temperature

2003 ◽  
Vol 794 ◽  
Author(s):  
M. T. Todaro ◽  
M. De Giorgi ◽  
V. Tasco ◽  
M. De Vittorio ◽  
A. Passaseo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Gaas Matrix ◽  
Metal Organic ◽  
External Efficiency ◽  
Dot Density

ABSTRACTWe investigate the optical properties of InGaAs QDs emitting at 1330 nm, directly grown by Metal Organic Chemical Vapor Deposition (MOCVD) in a GaAs matrix, without indium in the barrier. The PL characterization of this new kind of QDs, shows very narrow lineshape at room temperature and a strong reduction of the temperature dependent quenching of the emission (a factor of 3 from 30 K to 300 K).The quantum external efficiency obtained by inserting such QDs into light emitting diode structures, despite the low dot density (1.6*109 cm−2), is 0.03%. This value corresponds to an individual QD efficiency about 30% higher than that reported in the literature for state of art InGaAs/InGaAs QD LEDs.

High-efficiency vertical-structure GaN-based light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (7) ◽  
pp. 1642-1650 ◽  
Author(s):  
Wenliang Wang ◽  
Yunhao Lin ◽  
Yuan Li ◽  
Xiaochan Li ◽  
Liegen Huang ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diode ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical ◽  
Light Emitting ◽  
Si Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

High-quality GaN-based light-emitting diode (LED) wafers have been grown on Si substrates by metal–organic chemical vapor deposition by designing epitaxial structures with AlN/Al0.24Ga0.76N buffer layers and a three-dimensional (3D) GaN layer.

scholarly journals ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

2006 ◽  
Vol 88 (17) ◽  
pp. 173506 ◽  
Author(s):  
W. Z. Xu ◽  
Z. Z. Ye ◽  
Y. J. Zeng ◽  
L. P. Zhu ◽  
B. H. Zhao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon

1999 ◽  
Vol 4 (S1) ◽  
pp. 739-744 ◽  
Author(s):  
S. Bidnyk ◽  
B. D. Little ◽  
Y. H. Cho ◽  
J. Krasinski ◽  
J. J. Song ◽  
...  
Keyword(s):  
Room Temperature ◽  
Optical Pumping ◽  
Laser Action ◽  
Chemical Vapor ◽  
Pulse Excitation ◽  
Organic Chemical ◽  
Seeding Layer ◽  
Light Emitting ◽  
Practical Applications ◽  
Metal Organic

Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5- and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnification optical system using a high density pulsed excitation source. We suggest that the cavity formed in a pyramid is of a ring type, formed by total internal reflections of light off the pyramids’ surfaces. The mode spacing of the laser emission was found to be correlated to the size of pyramids. The effects of pyramid geometry and pulse excitation on the nature of laser oscillations inside of the pyramids is discussed. Practical applications of the results for the development of light-emitting pixels and laser arrays are suggested.

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