Stress-field in Sputtered Mo Thin Films and Mo/Ni Superlattices: Origin and Evolution after Ion-Irradiation

2003 ◽  
Vol 795 ◽  
Author(s):  
A. Debelle ◽  
G. Abadias ◽  
A. Michel ◽  
C. Jaouen ◽  
Ph. Guérin ◽  
...  
Keyword(s):  
Stress Field ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Parameter ◽  
Biaxial Stress ◽  
Ion Beam Sputtering ◽  
Origin And Evolution ◽  
Additional Information ◽  
Growth Defects ◽  
Beam Sputtering

ABSTRACTIn the present study the ion irradiation technique is used to investigate the origin of the stress-field in Mo layers grown by ion beam sputtering. Strain measurements were performed by X- ray Diffraction (XRD) using the sin2ψ method. The evolution of the sin2ψ plots with ion irradiation shows that the usual assumption of a biaxial stress state is not adequate to determine the true stress-free lattice parameter a0 of the film. A new stress model based on a triaxial state of stress, which includes a hydrostatic component linked to point defects induced volume distortions, is derived to interpret the XRD results. For pure Mo films, the obtained a0 parameter is close to the bulk value, while for Mo sublayers in Mo/Ni superlattices, the a0 value is lower due to intermixing between Ni and Mo. These results demonstrate that ion irradiation is a powerful tool for stress relaxation, which allows to obtain additional information on the respective contribution of chemical effects and growth defects to the a0 value.

Intrinsic stress and alloying effect in Mo/Ni superlattices: a comparison between ion beam sputtering and thermal evaporation

2005 ◽  
Vol 875 ◽  
Author(s):  
A. Debelle ◽  
G. Abadias ◽  
A. Michel ◽  
C. Jaouen ◽  
Ph. Guérin ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Parameter ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Deposited Energy

AbstractEpitaxial Mo(110)/Ni(111) superlattices were grown on (1120) single-crystal sapphiresubstrates, by ion beam sputtering (IBS) and thermal evaporation (TE), in order to investigate the role of deposited energy on the interfacial mixing process observed in Mo sublayers. To separate intermixing and growth stress contributions, a careful and detailed characterization of the stress/strain state of both samples was performed by X-ray Diffraction (XRD). Non-equal biaxial coherency stresses are observed in both samples. For the IBS specimen, an additional source of stress, of hydrostatic type, due to growth-induced point defects, is present, resulting in a triaxial stress state. The use of ion irradiation to achieve a controlled stress relaxation can provide additional data and, as shown elsewhere, allows to obtain the stress-free lattice parameter a0 solely linked to chemical effects. For the TE sample, a standard biaxial analysis gives a0. In both samples, the a0 value is lower than the bulk lattice parameter, due to the presence of intermixed Mo(Ni) layers. However, the intermixing is larger in the sputtered Mo sublayers than in the thermal evaporated ones, putting forward the prime role of energy and/or momentum transfer occurring during energetic bombardment.

Nitrogen‐ion irradiation during the deposition of C1−xNx thin films by ion beam sputtering technique

1996 ◽  
Vol 14 (3) ◽  
pp. 777-780 ◽  
Author(s):  
Satoshi Kobayashi ◽  
Keiko Miyazaki ◽  
Shinji Nozaki ◽  
Hiroshi Morisaki ◽  
Shigeo Fukui ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Nitrogen Ion

Deposition of Conductive Titanium Sub-Oxide Films by Reactive Ion-Beam Sputtering

1994 ◽  
Vol 337 ◽  
Author(s):  
K.G. Grigorov ◽  
A.H. Benhocine ◽  
D. Bouchier ◽  
F. Meyer
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Lattice Parameter ◽  
Ultra High Vacuum ◽  
Titanium Monoxide ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Cubic Structure ◽  
Electron Spectrometry

ABSTRACTTitanium monoxide films were deposited on silicon by reactive ion beam sputtering from a Ti target. The film composition was measured in situ by Auger electron spectrometry. It was observed that oxygen content in the deposit does not depend on the substrate temperature, up to 600 °C. Synthesized TiO films had a cubic structure with a lattice parameter of 4.17 Å, which confirmed that the O/Ti concentration ratio in the films was very close to the expected value. The films were found to be conductive, with a resistivity value equal to 170 μΩ cm. They had a yellowish metallic appearence and a very smooth surface. Sequences of annealings at increasing temperatures were performed under ultra-high-vacuum. No AES signal from silicon was observed up to a temperature of 700 °C.

scholarly journals FORMATION POSSIBILITY OF THE AL3SI METASTABLE PHASE DURING ION-BEAM AND MAGNETRON DEPOSITION OF COMPOSITE AL-SI FILMS

2020 ◽  
Author(s):  
Evelina Domashevskaya ◽  
Vladimir Terekhov ◽  
Igor Zanin ◽  
Konstantin Barkov
Keyword(s):  
Metastable Phase ◽  
Ion Beam ◽  
Composite Films ◽  
Lattice Parameter ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Beam Sputtering ◽  
Cubic System ◽  
The Stability ◽  
Si Films

Metastable phases such as Al3Si can form in Al-Si composite films obtained by magnetron and ion-beam sputtering. In this work, we investigated the stability region of the Al3Si phase depending on the composition of the ion-beam AlxSi1-x films. Using X-ray diffraction and Ultrasoft X-ray Emission Spectroscopy, an ordered Al3Si solution with a primitive unit cell of the cubic system Pm3m and a lattice parameter of 4.085 Å was found in Al1-xSix ionbeam films. Studies have shown that the long-range order is quite resistant to changes in the elemental composition.

Study of defects and structural transformations induced by ion irradiation of Y2O3 thin films deposited by Ion Beam Sputtering

2008 ◽  
Vol 1122 ◽  
Author(s):  
Bertrand Lacroix ◽  
Fabien Paumier ◽  
Michael Jublot ◽  
Jérôme Pacaud ◽  
Rolly J. Gaboriaud
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Structural Transformations ◽  
Deposition Technique ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Beam Sputtering ◽  
Different Doses

AbstractY2O3 thin films deposited by Ion Beam Sputtering (IBS) deposition technique exhibit a particular disordered microstructure. In order to obtain a better knowledge on phase transition mechanisms occurring during irradiation, thin films with different microstructures have been implanted with xenon ions at different energies and different doses. This work established two types of transition (cubic-amorphous or cubic-monoclinic) depending mainly on the ion energy with a possibility to control the damaging kinetic via the pre-existing oxygen disorder.

Stress and Intermixing in Epitaxial Ni(111)/Mo(110) Superlattices

2007 ◽  
Vol 264 ◽  
pp. 1-6 ◽  
Author(s):  
Gregory Abadias ◽  
Aurelien Debelle ◽  
Anny Michel ◽  
Christiane Jaouen
Keyword(s):  
Stress State ◽  
Stress Relaxation ◽  
Structural Changes ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Parameter ◽  
Growth Stress ◽  
Chemical Effect ◽  
Ion Beam Sputtering ◽  
Epitaxial Relationship

The stress state and intermixing in epitaxial Ni/Mo multilayers grown on (11 2 0) sapphire substrates are investigated using X-ray Diffraction (XRD). Two deposition techniques were used, namely ion beam sputtering (IBS) and magnetron sputtering (MS), to vary the energy of the deposited species. In both cases, high-quality superlattices with a Nishiyama-Wasserman epitaxial relationship Ni [110] (111) // Mo [001] (110) were obtained. The residual stress state appears rather complex, resulting from two contributions: a growth-stress whose magnitude and sign depend on growth conditions and coherency stresses of opposite signs in the two elemental sublayers (tensile for Ni and compressive for Mo). Post-growth ion irradiation at low fluences was used to induce structural changes in a controlled way. For the case of IBS, it resulted in partial stress relaxation, as the growth stress could be almost fully relaxed, while the coherency stresses remained unchanged. For the case of MS, a distinct behavior was found: a stress increase of the tensile component of Mo-sublayers was observed, while a stress reduction of the compressive component was noticed. We attribute this phenomenon to ion irradiation induced intermixing. For the Ni sublayers, this intermixing leads to a stress relaxation. The modeling of the stress evolution during ion irradiation was performed using a triaxial stress analysis which enabled us to determine the ‘stress-free and defect-free lattice parameter’, solely linked to chemical effect.

scholarly journals Ti-based MXenes: Preparation by Ion Beam Sputtering and Microstructural Evolution by Ion Irradiation

2019 ◽  
Vol 25 (S2) ◽  
pp. 1628-1629 ◽  
Author(s):  
Pavel Horak ◽  
Snejana Bakardjieva ◽  
Jiri Vacik ◽  
Jiri Plocek ◽  
Robert Klie
Keyword(s):  
Microstructural Evolution ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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