GaN quantum dot UV light emitting diode

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Current Injection ◽  
High Density ◽  
Light Emitting ◽  
Room Temperature Luminescence

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

Analysis of various solvent effects to quantum dots for bilayer quantum dot light-emitting diode

2021 ◽  
Author(s):  
Jae-In Yoo ◽  
Suk-Ho Song ◽  
Jae-Peel Chung ◽  
Zhang Yi ◽  
Sung-Jae Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Solvent Effects ◽  
Light Emitting Diode ◽  
Light Emitting

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

All-solution processed inverted green quantum dot light-emitting diodes with concurrent high efficiency and long lifetime

2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Shell Growth ◽  
Solution Processed ◽  
Light Emitting ◽  
Long Lifetime

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.

An Ultra-Simple Method for Synthesis of Violet CdS Quantum Dots at Sub-Room Temperature

2020 ◽  
Vol 20 (6) ◽  
pp. 3935-3938 ◽  
Author(s):  
Chandan Yadav ◽  
Karan Surana ◽  
Pramod K. Singh ◽  
Bhaskar Bhattacharya
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Uv Light ◽  
Xrd Analysis ◽  
Wet Chemical Method ◽  
Simple Method ◽  
Light Emitting ◽  
Violet Color ◽  
Wet Chemical ◽  
Sensitized Solar Cells

The emergence of fluorescence quantum dots (QDs) has led to the development of variety of applications in science and technology. Owing to the diverse optical and electrical properties of CdS QDs we have synthesized the same using wet chemical method. The QDs have been prepared at sub-room temperature using a new solvent comprising a mixture of water and methanol. The QDs when seen under UV light radiate violet color. The band-gap of the QDs deduced from the absorption spectra was 3.08 eV while PL spectra of the QDs suggested possibility of multiple exciton generation with a close to narrow size distribution. XRD analysis confirmed cubic structure of the particles. The obtained results suggest that these QDs can play ideal role in quantum dot sensitized solar cells (QDSSC) or in light emitting diodes (LEDs).

Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

2012 ◽  
Vol 522 ◽  
pp. 33-35 ◽  
Author(s):  
J.W. Sun ◽  
V. Jokubavicius ◽  
R. Liljedahl ◽  
R. Yakimova ◽  
S. Juillaguet ◽  
...  
Keyword(s):  
White Light ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Luminescence Properties ◽  
Light Emitting ◽  
Room Temperature Luminescence

scholarly journals Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Kohei Etou ◽  
Satoshi Hiura ◽  
Soyoung Park ◽  
Kazuya Sakamoto ◽  
Junichi Takayama ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
Room Temperature ◽  
Spin Transport ◽  
Light Emitting Diode ◽  
Polarized Light ◽  
Light Emitting ◽  
Spin Polarized

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

2010 ◽  
Vol 96 (12) ◽  
pp. 123503 ◽  
Author(s):  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Wei-Hsun Lin ◽  
Shu-Cheng Mai ◽  
Shung-Yi Wu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Type Ii ◽  
Light Emitting ◽  
Gaas Quantum Dot ◽  
Room Temperature Operation

White Light Emitting CdS Quantum Dot Devices Coated with Layers of Graphene Carbon Quantum Dots

MRS Advances ◽  
2020 ◽  
Vol 5 (63) ◽  
pp. 3337-3343
Author(s):  
O. Deodanes ◽  
J. C. Molina ◽  
C. Violantes ◽  
D. Pleitez ◽  
J. Cuadra ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
White Light ◽  
Polyester Resin ◽  
Uv Light ◽  
Resin Matrix ◽  
Light Emitting ◽  
Quenching Effect ◽  
Cds Qds ◽  
Low Efficiency

AbstractCadmium sulfide quantum dots (CdS QDs) are semiconductor nanoparticles having sizes in the order of nanometers. They are materials that have outstanding properties for down conversion applications. These nanostructures have been used in the fabrication of white light emitting diodes (WLEDs) in the last years. However, inhomogeneous deposition of CdS QD conversion materials allows unwanted UV light escape. In addition, low efficiency due to strong self-quenching effect, incompatibility between CdS QD solution/crystal polyester resin matrix and reabsorption are common problems that need to be solved. In this work, we try to address the incompatibility between the CdS QD solution/crystal polyester resin matrix by using a solvent exchange procedure. To block the unwanted UV-light escape, we coated our devices with a mixture of graphene carbon quantum dot (GCQD) solution/crystal polyester resin matrix. The QDs and the WLED prototypes were characterized by absorption and photoluminescence (PL) spectroscopy. The QDs embedded in the matrix shown a good homogeneous dispersion. On the other hand, the mixture shown a rapid solidification. These facts indicate a good compatibility between the CdS QDs and the crystal polyester resin. We also observed a considerable reduction of unwanted near UV-light. White light emission from WLED devices with common crystal polyester resin and low-cost materials has been achieved.

Unveiling the composite structures of emissive consolidated p–i–n junction nanocells for white light emission

Nanoscale ◽  
2018 ◽  
Vol 10 (29) ◽  
pp. 13867-13874
Author(s):  
Kyu Seung Lee ◽  
Jaeho Shim ◽  
Hyunbok Lee ◽  
Sang-Youp Yim ◽  
Basavaraj Angadi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Small Molecules ◽  
Active Layer ◽  
White Light ◽  
Composite Structures ◽  
Light Emission ◽  
Light Emitting Diode ◽  
White Light Emission ◽  
Light Emitting ◽  
White Electroluminescence

Hybrid organic-Red-Green-Blue (RGB) color quantum dots were incorporated into consolidated p(polymer)–i(RGB quantum dots)–n(small molecules) junction structures to fabricate a single active layer for a light emitting diode device for white electroluminescence.

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