InAs Quantum Dots for Optoelectronic Device Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Stewart ◽  
S. Barik ◽  
M. Buda ◽  
H. H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Dots ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Organic Chemical ◽  
Group V ◽  
Inas Quantum Dots ◽  
Group Iii ◽  
Device Applications ◽  
Metal Organic

ABSTRACTIn this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition

Nano Letters ◽  
2011 ◽  
Vol 11 (9) ◽  
pp. 3941-3945 ◽  
Author(s):  
Xin Yan ◽  
Xia Zhang ◽  
Xiaomin Ren ◽  
Hui Huang ◽  
Jingwei Guo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Inas Quantum Dots ◽  
Gaas Nanowires ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Ordering InAs Quantum Dots Formation on GaAs/InP by Low Pressure Metal-Organic Chemical Vapor Deposition

2001 ◽  
Vol 40 (Part 1, No. 10) ◽  
pp. 5889-5892
Author(s):  
Jingzhi Yin ◽  
textscWang Xinqiang ◽  
textscDu Guotong ◽  
textscYin Zongyou ◽  
textscLi Mingtao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Organic Chemical ◽  
Inas Quantum Dots ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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