Highly and Rapidly Stabilized Protocrystalline Silicon Multilayer Solar Cells

2005 ◽  
Vol 862 ◽  
Author(s):  
Koeng Su Lim ◽  
Joong Hwan Kwak ◽  
Seong Won Kwon ◽  
Seung Yeop Myong
Keyword(s):  
Solar Cells ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Layer Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Current Voltage ◽  
Back Reflector ◽  
P Type

AbstractWe have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. However, the source of the superior light-induced stability of the pc-Si:H multilayer absorbers compared to conventional amorphous silicon (a-Si:H) absorbers remains unclear. Photoluminescence (PL) and Fourier transform infrared (FTIR) spectroscopy measured at room temperature produce strong evidence that nano-sized silicon grains embedded in regularly arranged highly H2-diluted sublayers suppress the photocreation of dangling bonds. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous siliconcarbon alloy (p-a-Si1-xCx:H) structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage, and the wide overlap of dark current - voltage (JD-V) and short-circuit current - open-circuit voltage (Jsc-Voc) characteristics prove that the double p-a-Si1-xCx:H layer structure successfully reduces recombination at the p/i interface. Thus, we achieved a highly stabilized efficiency of 9.0 % without any back reflector.

scholarly journals Features of model thin-film solar cells photoelectric characteristics based on a non-toxic multi-component connection CuZn2AlS4

2021 ◽  
Vol 5 (3) ◽  
pp. 242-250
Author(s):  
D. Sergeyev ◽  
K. Shunkeyev ◽  
B. Kuatov ◽  
N. Zhanturina
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Current Voltage

In this paper, the features of the characteristics of model thin-film solar cells based on the non-toxic multicomponent compound CuZn2AlS4 (CZAS) are considered. The main parameters (open-circuit voltage, short-circuit current, fill factor, efficiency) and characteristics (quantum efficiency, current-voltage characteristic) of thin-film solar cells based on CZAS have been determined. The minimum optimal thickness of the CZAS absorber is found (1-1.25 microns). Deterioration of the performance of solar cells with an increase in operating temperature (280-400 K) is shown. It is revealed that in the wavelength range of 390-500 nm CZAS has a high external quantum efficiency, which allows its use in designs of multi-junction solar cells designed to absorb solar radiation in the specified range. It is shown that the combination of CZAS films with a buffer layer of non-toxic ZnS increases the performance of solar cells.

scholarly journals Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics

2018 ◽  
Vol 9 ◽  
pp. 1802-1808 ◽  
Author(s):  
Katherine Atamanuk ◽  
Justin Luria ◽  
Bryan D Huey
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Three Dimensional ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Order Of Magnitude ◽  
Individual Grains

The nanoscale optoelectronic properties of materials can be especially important for polycrystalline photovoltaics including many sensor and solar cell designs. For thin film solar cells such as CdTe, the open-circuit voltage and short-circuit current are especially critical performance indicators, often varying between and even within individual grains. A new method for directly mapping the open-circuit voltage leverages photo-conducting AFM, along with an additional proportional-integral-derivative feedback loop configured to maintain open-circuit conditions while scanning. Alternating with short-circuit current mapping efficiently provides complementary insight into the highly microstructurally sensitive local and ensemble photovoltaic performance. Furthermore, direct open-circuit voltage mapping is compatible with tomographic AFM, which additionally leverages gradual nanoscale milling by the AFM probe essentially for serial sectioning. The two-dimensional and three-dimensional results for CdTe solar cells during in situ illumination reveal local to mesoscale contributions to PV performance based on the order of magnitude variations in photovoltaic properties with distinct grains, at grain boundaries, and for sub-granular planar defects.

Solar Cell Contacts Using Nano-Sized Dispersions

1999 ◽  
Vol 581 ◽  
Author(s):  
Doug Schulz ◽  
R. Ribelin ◽  
X. Wu ◽  
K.M. Jones ◽  
R.J. Matson ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spray Deposition ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Cdte Layer ◽  
Open Circuit ◽  
Alloy Formation ◽  
Current Densities ◽  
P Type ◽  
Open Circuit Voltages

ABSTRACTNano-sized dispersions have been employed as precursor inks for the spray deposition of contacts to both Si and CdTe materials. In the case of Si, nano-sized Al particles (nano-Al) were dispersed and spray deposited onto p-type Si. Annealing above the eutectic temperature causes alloy formation yielding a p+ layer with p ∼ 10−4 Ω•cm. For CdTe, nano-sized Te particles (nano-Te) were dispersed and sprayed onto CdTe/CdS/SnO2/glass heterostructures. Contact to the CdTe layer occurred during a 30 min anneal in He (T = 215 to 255 °C). These solar cells were finished by spin-coating the Te layer with Ag paint and subsequently annealing in air (100 °C / 1 h). This approach produces solar cells with open circuit voltages (Voc) from 720 to 800 mV, short circuit current densities (Jsc) from 18 to 20 mA/cm2 and efficiencies up to 10.3%. The performance of these cells was similar to those produced using the standard NREL contact.

Modeling of Abnormal Hysteresis in CsPbBr3 based Perovskite Solar Cells

2021 ◽  
Vol 34 (1) ◽  
pp. 01-08
Author(s):  
B GopalKrishna ◽  
Sanjay Tiwari
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Simulation Study ◽  
Open Circuit Voltage ◽  
Layer Structure ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Perovskite Layer

Perovskite solar cells are emerging photovoltaic devices with PCE of above 25%. Perovskite are suitable light absorber materials in solar cells with excellent properties like appropriate band gap energy, long carrier lifetime and diffusion length, and high extinction coefficient. Simulation study is an important technique to understand working mechanisms of perovskites solar cells. The study would help develop efficient, stable PSCs experimentally. In this study, modeling of perovskite solar cell was carried out through Setfos software. The optimization of different parameters of layer structure of solar cell would help to achieve maximum light absorption in the perovskite layer of solar cell. Simulation study is based drift-diffusion model to study the different parameters of perovskite solar cell. Hysteresis is one of the factors in the perovskite solar cell which may influence the device performance. The measurement of abnormal hysteresis can be done by current-voltage curve during backward scan during simulation study. In backward scan, the measurement starts from biasing voltage higher than open circuit voltage and sweep to voltage below zero. The numerical simulation used to study the various parameters like open circuit voltage, short circuit current, fill factor, power conversion efficiency and hysteresis. The simulation results would help to understand the photophysics of solar cell physics which would help to fabricate highly efficient and stable perovskite solar cells experimentally.

Optical Simulation and Investigation of the Effect of Hysteresis on the Perovskite Solar Cells

NANO ◽  
2019 ◽  
Vol 14 (10) ◽  
pp. 1950127 ◽  
Author(s):  
Farhad Jahantigh ◽  
S. M. Bagher Ghorashi
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

Perovskite solar cells have recently been considered to be an auspicious candidate for the advancement of future photovoltaic research. A power conversion efficiency (PCE) as high as 22% has been reported to be reached, which can be obtained through an inexpensive and high-throughput solution process. Modeling and simulation of these cells can provide deep insights into their fundamental mechanism of performance. In this paper, two different perovskite solar cells are designed by using COMSOL Multiphysics to optimize the thickness of each layer and the overall thickness of the cell. Electric potential, electron and hole concentrations, generation rate, open-circuit voltage, short-circuit current and the output power were calculated. Finally, PCEs of 20.7% and 26.1% were predicted. Afterwards, according to the simulation results, the role of the hole transport layer (HTL) was investigated and the optimum thickness of the perovskite was measured to be 200[Formula: see text]nm for both cells. Therefore, the spin coating settings are selected so that a coating with this thickness for cell 1 is deposited. In order to compare the performance of HTM layer, solar cells with a Spiro-OMeTAD HTM and without the HTM layer in their structure were fabricated. According to the obtained photovoltaic properties, the solar cell made with Spiro-OMeTAD has a more favorable open-circuit voltage ([Formula: see text]), short-circuit current density ([Formula: see text]), fill factor (FF) and PCE compared to the cell without the HTM layer. Also, hysteresis depends strongly on the perovskite grain size, because large average grain size will lead to an increase in the grain’s contact surface area and a decrease in the density of grain boundaries. Finally, according to the results, it was concluded that, in the presence of a hole transport layer, ion transfer was better and ion accumulation was less intense, and therefore, the hysteresis decreases.

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Xinxia Zheng ◽  
Shengzhi Xu ◽  
Changchun Wei ◽  
...  
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Single Chamber ◽  
P Type

ABSTRACTIn this article, we present a study of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) films by very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using high deposition pressure. Electrical, structural and optical properties of the films were investigated. Dark conductivity as high as 2.75S/cm of p-type nc-Si: H prepared at 2.5Torr pressure has been achieved at a deposition rate of 1.75Å/s for 25nm thin film. By controlling boron and phosphorus contamination, single junction nc-Si: H solar cells incorporated p-layers prepared under high pressure and low pressure, respectively, were deposited. It has been proven that nanocrystalline silicon solar cells with incorporation of p layer prepared at high pressure has resulted in enhanced open circuit voltage, short circuit current density and subsequently high conversion efficiency. Through the optimization of the bottom solar cell and application of ZnO/Al back reflector, 10.59% initial conversion efficiency of micromorph tandem solar cell (1.027cm2) with an open circuit voltage of 1.3864V, has been fabricated, where the bottom solar cell using a high pressure p layer was deposited in a single chamber.

Metal/Porous Silicon Schottky Diode Structures as Sensors

2006 ◽  
Vol 915 ◽  
Author(s):  
Tayyar Dzhafarov ◽  
Cigdem Oruc Lus ◽  
Sureyya AYDIN ◽  
Emel Cingi
Keyword(s):  
Porous Silicon ◽  
Schottky Diode ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Schottky Type ◽  
Capacitance Characteristics

AbstractIn this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.

scholarly journals Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

2018 ◽  
Vol 9 ◽  
pp. 3 ◽  
Author(s):  
Xianghua Zhang ◽  
Ilia Korolkov ◽  
Bo Fan ◽  
Michel Cathelinaud ◽  
Hongli Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chalcogenide Glass ◽  
Glass Ceramic ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Iodine Doping ◽  
P Type ◽  
Photovoltaic Solar Cells

In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2–Sb2Se3–CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3and n-type Sb2Se3. The conductivity of Sb2Se3has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3and the glass-ceramic thin films give a short-circuit current density JSCof 10 mA/cm2and an open-circuit voltage VOCof 255 mV, with a power conversion efficiency of about 0.9%.

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

scholarly journals Противодействующий фотовольтаический эффект в верхней межгенераторной части трехпереходных GaInP/GaAs/Ge солнечных элементов

2019 ◽  
Vol 53 (11) ◽  
pp. 1568
Author(s):  
М.А. Минтаиров ◽  
В.В. Евстропов ◽  
С.А. Минтаиров ◽  
М.З. Шварц ◽  
Н.А. Калюжный
Keyword(s):  
Electric Power ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Undesirable Effect ◽  
Current Dependence ◽  
Power Generators ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractThe “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the V _ oc – J _ sc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p ^+– n ^+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p – n junctions. In this case, the V _ oc – J _ sc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.

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