Properties of Cu(In,Ga)Se2:Fe Thin Films For Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Keiichiro Sakurai ◽  
Hajime Shibata ◽  
Satoshi Nakamura ◽  
Minoru Yonemura ◽  
Shinpei Kuwamori ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells ◽  
Spectral Response ◽  
Cell Performance ◽  
Fe Doping ◽  
Long Wavelength ◽  
Polycrystalline Thin Films ◽  
Fe Content ◽  
Absorbance Spectra

AbstractWe have fabricated CIGS:Fe polycrystalline thin films using a standard three-stage method, and investigated the effects of Fe doping on cell performances. The Ga / (In+Ga) ratio was varied between 0.3 ˜ 1.0 (= CGS), and the Fe concentration was varied between 0.0 ˜ 1.2 mol%. The films were characterized by various means, including the cell performance. Increment of the grain size with higher Fe content was observed. Redshift with higher Fe content was observed in the absorbance spectra. The spectral response of the fabricated solar cells deteriorated with higher Fe content, from the long wavelength side.

Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

2010 ◽  
Vol 1245 ◽  
Author(s):  
Do Yun Kim ◽  
Ihsanul Afdi Yunaz ◽  
Shunsuke Kasashima ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hydrogen Flow ◽  
Long Wavelength

AbstractOptical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

A thiourea additive-based quadruple cation lead halide perovskite with an ultra-large grain size for efficient perovskite solar cells

Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21824-21833 ◽  
Author(s):  
Jyoti V. Patil ◽  
Sawanta S. Mali ◽  
Chang Kook Hong
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Inorganic Perovskite ◽  
Halide Perovskite ◽  
Lead Halide

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.

Growth of large grain-size Cu2ZnSn(SxSe1-x)4 thin films by annealing precursors sputtered from a single quaternary target for solar cells application

2017 ◽  
Vol 109 ◽  
pp. 480-489 ◽  
Author(s):  
Gang Yang ◽  
Yong-Feng Li ◽  
Bin Yao ◽  
Zhan-Hui Ding ◽  
Rui Deng ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solar Cells

Evaluation of Ar-Diluted Silane PECVD for Thin Film Si:H Based Solar Cells

2004 ◽  
Vol 808 ◽  
Author(s):  
J. A. Anna Selvan ◽  
Yuan-Min Li ◽  
Liwei Li ◽  
Alan E. Delahoy
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Nanocrystalline Silicon ◽  
Thin Layers ◽  
Dilution Method ◽  
Critical Question ◽  
Long Wavelength ◽  
Hydrogen Dilution ◽  
Porous Microstructure ◽  
The Stability

ABSTRACTDilution by Ar of silane plasma has been reported to increase the stability of a-Si:H films. A critical question is whether Ar diluted i-layers offer higher stabilized solar cell efficiencies than the conventional hydrogen dilution method. We have fabricated a-Si:H p-i-n solar cells with RF-PECVD i-layers by Ar dilution of silane. Ar dilution ratio (ADR, Ar/SiH4), RF power,pressure, and i-layer thickness were varied. At low ADR < 20, such solar cells show comparable initial efficiencies and stability as those devices having H2-diluted i-layers of similar thickness. For cells made with ADR > 20, the initial efficiency decreases dramatically with further increase in Ar dilution, and light soaking causes only mild changes in efficiencies. The stabilized efficiencies of cells made with high ADR are inferior to the cells produced with low ADR or cells prepared by H2 dilution. Further, Voc of solar cells made with high ADR (> 50) decreases substantially in ambient, indicating a porous microstructure susceptible to oxidation. While thermal annealing improves the Voc, a full recovery of Voc is made by accelerated light soaking.The combination of high power and high ADR can lead to nanocrystalline silicon (nc-Si:H) growth, although nucleation is much more difficult to attain by the Ar dilution method compared to hydrogen dilution. We have succeeded in fabricating p-i-n solar cells with nc-Si:H i-layers prepared by the Ar dilution approach. The double dilution by Ar and hydrogen of silane (Ar+H2+SiH4) can result in nc-Si:H i-layers with enhanced long wavelength spectral response compared to devices incorporating nc-Si:H i-layers grown by H2 dilution only. The nc-Si:H solar cells with Ar+H2 diluted i-layers exhibit no light-induced degradation.Using energetic Ar-rich plasma, in a process much simpler than the traditional nc-Si:H technique, doped a-Si:H thin layers can be prepared to form excellent tunnel junctions for multi-junction solar cells. We demonstrate such a novel, non-contaminating tunnel junction in tandem a-Si/a-Si and a-Si/nc-Si solar cells entirely fabricated in a single-chamber RF-PECVD system.

Characterization of Physical Properties of Thermally Evaporated Doped CdS Thin Films for Photovoltaics

2012 ◽  
Vol 510-511 ◽  
pp. 156-162 ◽  
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Window Layer ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Cds Thin Film ◽  
Cds Thin Films ◽  
Evaporation Technique

Polycrystalline thin films of Cadmium Sulfide (CdS) have been extensively studied for application as a window layer in CdTe/CdS and CIGS/CdS thin film solar cells. Higher efficiency of solar cells is possible by a better conductivity of a window layer, which can be achieved by doping these films with suitable elements. CdS thin films were deposited on properly cleaned glass substrate by thermal evaporation technique under vacuum2×10-5mbar. Films were structurally characterized by using X-ray diffraction. The X-ray diffraction spectra showed that the thin films were polycrystalline in nature. Aluminum was doped chemically in as deposited and annealed thin films by immersing films in AlNO33.9H2O solutions respectively. Comparison between the effects of different doping ratios on the structural and optical properties of the films was investigated. Higher doping ratios have improved the electrical properties by decreasing the resistivity of the films and slightly changed the bandgap energy Eg. The grain size, strain, and dislocation density were calculated for as-deposited and annealed films.

Deposition of polycrystalline thin films with controlled grain size

2005 ◽  
Vol 38 (3) ◽  
pp. 490-496 ◽  
Author(s):  
M Vopsaroiu ◽  
G Vallejo Fernandez ◽  
M J Thwaites ◽  
J Anguita ◽  
P J Grundy ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Polycrystalline Thin Films

scholarly journals Optimization ofμc-Si1−xGex:H Single-Junction Solar Cells with Enhanced Spectral Response and Improved Film Quality

2015 ◽  
Vol 2015 ◽  
pp. 1-9
Author(s):  
Yen-Tang Huang ◽  
Pei-Ling Chen ◽  
Po-Wei Chen ◽  
Hung-Jung Hsu ◽  
Cheng-Hang Hsu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Rf Power ◽  
Single Junction ◽  
Long Wavelength ◽  
Tandem Cell ◽  
Cell Efficiency ◽  
Photo Conductivity ◽  
Gas Ratio ◽  
Incorporation Efficiency

Effects of RF power on optical, electrical, and structural properties ofμc-Si1−xGex:H films was reported. Raman and FTIR spectra fromμc-Si1−xGex:H films reflected the variation in microstructure and bonding configuration. Unlike increasing the germane concentration for Ge incorporation, low RF power enhanced Ge incorporation efficiency inμc-Si1−xGex:H alloy. By decreasing RF power from 100 to 50 W at a fixed reactant gas ratio, the optical bandgap ofμc-Si1−xGex:H was reduced owing to the increase in Ge content from 11.2 to 23.8 at.%, while Ge-related defects and amorphous phase were increased. Consequently, photo conductivity of 1.62 × 10−5 S/cm was obtained for theμc-Si1−xGex:H film deposited at 60 W. By applying 0.9 μm thickμc-Si1−xGex:H absorber withXCof 48% and [Ge] of 16.4 at.% in the single-junction cell, efficiency of 6.18% was obtained. The long-wavelength response ofμc-Si1−xGex:H cell was significantly enhanced compared with theμc-Si:H cell. In the case of tandem cells, 0.24 μm a-Si:H/0.9 μmμc-Si1−xGex:H tandem cell exhibited a comparable spectral response as 0.24 μm a-Si:H/1.4 μmμc-Si:H tandem cell and achieved an efficiency of 9.44%.

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